WTP882

WTP772 WTP882 PNP/NPN Epitaxial Planar Transistors P b Lead(Pb)-Free TO-251 1.BASE 2.COLLECTOR 3.EMITTER 123 ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) Rating Symbol C ollec tor-E mitter Volta ge C ollec tor-B as e Voltage E mitter-B as e Voltage C ollec tor C ur rent ( DC ) C ollec tor C ur rent ( P uls e)1 B as e C ur rent Total Devic e Dis s ipation Tc =2 5 C TA=25°C J unc tion Temper ature S tor a ge, Temper ature VC E O VC B O VE B O I C ( DC ) IC ( P uls e) IB ( P uls e) PD Tj Ts tg PNP/WTP772 NPN/WTP882 -3 0 -4 0 -5 . 0 -3 . 0 -7 . 0 -0 . 6 10 1.4 150 30 40 5. 0 3. 0 Unit 7. 0 0. 6 Vdc Vdc Vdc Adc Adc Adc W C C -5 5 to +1 5 0 Device Marking WT P 7 7 2 = B 7 7 2 , WT P 8 8 2 = D 8 8 2 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-E mitter B reakdown Voltage ( I C= -1 0 / 1 0 mAdc, I B =0 ) C ollec tor-B as e B reakdown Volta ge ( I C = -1 0 0 / 1 0 0 µAdc , I E =0 ) E mitter-B as e B reakdown Volta ge ( I E = -1 0 0 / 1 0 0 µAdc , I C =0 ) C ollec tor C utoff C ur rent ( VC E = -3 0 / 3 0 Vdc , I B =0 ) C ollec tor C utoff C ur rent ( VC B = -4 0 / 4 0 Vdc , I E =0 ) E mitter C utoff C ur rent ( VE B = -6 . 0 / 6 . 0 Vdc , I C =0 ) N OT E : 1 . P W 3 5 0 u s , d u t y c yc l e 2 % V( B R ) C E O -3 0 / 3 0 V( B R ) C B O -4 0 / 4 0 V( B R ) E B O -5 . 0 / 5 . 0 I CE 0 I CB O IE B O - -1 . 0 / 1 . 0 -1 . 0 / 1 . 0 -1 . 0 / 1 . 0 Vdc Vdc Vdc uAdc uAdc uAdc WEITRON http://www.weitron.com.tw WTP772 WTP882 ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC= -1.0/1.0 Adc, VCE=-2.0/2.0Vdc) DC Current Gain (IC= -100/100 mAdc, VCE= -2.0/2.0 Vdc) Collector-Emitter Saturation Voltage (IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc) Base-Emitter Saturation Voltage (IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc) Current-Gain-Bandwidth Product (IC= -0.1/0.1 mAdc, VCE=-5.0/5.0 Vdc, f=10MHz) hFE (1) hFE (2) VCE(sat) VBE(sat) fT 60 32 - - 400 -0.5/0.5 -2.0/2.0 Vdc Vdc 80/90 - MHz Classification of hFE(1) Rank Range R 60-120 O 100-200 Y 160-320 GR 200-400 WEITRON http://www.weitron.com.tw WTP772 WTP882 F1. Total Power Dissipation VS. Ambient Temperature NOTE F.2 Derating Curve for All Types dT-Percentage of Rated Current-% PT-Total Power Dissipation-W 10 8 6 4 2 0 10 25 9 cm 2 1. Aluminum heat sink of 1.0 mm thickness. 2. With no insulator film. 3. With silicon compound. 100 80 60 40 20 0 0 50 S/ bl im i ted ti pa si is D cm 0c m 2 ite fin in at he nk si 2 on lim ite d Without heat sink 50 100 150 100 150 Ta-Amient Temperature-°C Tc,Case Temperature(°C) F4. Safe Operating Areas 10 Ic(max),Pulse Ic(max),DC F3. Thermal Resistance VS. Pulse Width 4Rth-Thermal Resistance- C/W ° 30 10 -Ic,Collector Current(A) VCE=10V IC =1.0A Duty=0.001 10 PW (Duty< 10 ms50 %) P Cycle < mS 1m S W =1 3 00 1 1 0.1 0.3 0.03 0.01 NOTE 1. Tc=25 C 2. Curves must be derated linearly with increase of temperature and Duty Cycle. 1 3 6 10 0.1 0.3 1 3 10 30 100 300 1000 30 VCEO MAX 60 3 0.3 Di s L sipa (S ing imite tion d le no nr s/b ep Lim eti tiv ite ep d uls e) PW-Pulse Width-ms VCE-Collector to Emitter Voltage-V S 1m 0. us 100 F5. Collector Current VS. Collector To Emitter Voltage -2.0 WTP772 WTP882 F6. Collector Current VS. Collector To Emitter Voltage 2.0 -Ic,Collector Current(A) -Ic,Collector Current(A) -1.6 -1.2 Pulse Test IB=-10mA IB=-9mA IB=-8MA IB=-7mA IB=-6mA IB=-5mA IB=-4mA IB=-3mA IB=-2mA IB=-1mA 0 Pulse Test IB=10mA IB=9mA IB=8MA IB=7mA IB=6mA IB=5mA IB=4mA IB=3mA IB=2mA IB=1mA 0 1.6 1.2 -0.8 0.8 -0.4 0.4 0 -4 -8 -12 -16 -20 0 vCE -Collector-Emitter Voltage(V) 4 8 12 16 20 vCE -Collector-Emitter Voltage(V) WEITRON http://www.weitron.com.tw WTP772 WTP882 VCE(sat)-Collector Saturation Voltage(V) F8. VCE(sat), VBE(sat),-Ic 10 6 3 1 0.6 0.3 0.1 0.06 0.03 0.01 0.006 0.003 1000 600 hFE , -DC Current Gain WTP772 h FE VCE=2.0V Puse Test VBE(sat)-Base Saturation Voltage(V) F7. h FE, VBE -I c 300 100 60 30 10 6 3 1 0.001 0.003 0.01 VBE(sat) WTP772 WTP882 2 WTP88 sa t) VBE WTP772 WTP882 WTP772 VC E( WT P88 2 0.03 0.1 0.3 1 3 10 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 Ic-Collector Current(A) Ic-Collector Current(A) F9. fT - Ic f T -Gain Bandwidth Product(MHZ) 1000 F10. Cob -VCB , Cib -VCE Cob-Output Capacitance(PF ) Cib-Input Capacitance(PF ) 300 100 VCE=5.0V Forecd air Cooling (with heat sink) 300 100 60 30 WTP 882 WTP77 2 Cib f=1.0MHz I E =0(Cob) IC=0(Cib) WTP882 WTP772 WTP77 2 30 10 WTP 882 Cob 10 6 3 3 1 0.01 1 3 6 10 30 60 0.03 0.1 0.3 1 VCB -Collector to Base Voltage(V) VEB -Emitter to Base Voltage(V) Ic-Collector Cu rent(A) r WEITRON http://www.weitron.com.tw WTP772 WTP882 TO-251 Outline Dimensions unit:mm E A 4 G H B J 1 2 3 N D M K C L Dim A B C D E G H J K L M N TO-251 Min 6.40 6.80 0.50 2.20 0.45 1.00 5.40 0.45 0.90 6.50 - Max 6.80 7.20 0.80 2.30 2.50 0.55 1.60 5.80 0.69 1.50 0.90 1. Emitter 2. Base 3. Collector WEITRON http://www.weitron.com.tw