W25Q20EWSNIG

W25Q20EW 1.8V 2M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS, DUAL AND QUAD SPI -1- Publication Release Date: August 22, 2017 -Revision I W25Q20EW Table of Contents 1. 2. 4. 5. 6. 7. GENERAL DESCRIPTION ......................................................................................................... 5 FEATURES ................................................................................................................................. 5 PACKAGE TYPES AND PIN CONFIGURATIONS..................................................................... 6 4.1 Pin Configuration SOIC 150-mil and VSOP 150-mil....................................................... 6 4.2 PAD Configuration USON 2x3-mm/ USON 4x3-mm ...................................................... 6 4.3 Pin Description SOIC/ VSOP 150-mil, USON 2x3-mm/4x3-mm .................................... 6 4.4 Ball Configuration WLCSP .............................................................................................. 7 4.5 Ball Description WLCSP ................................................................................................. 7 PIN DESCRIPTIONS .................................................................................................................. 8 5.1 Chip Select (/CS) ............................................................................................................ 8 5.2 Serial Data Input, Output and IOs (DI, DO and IO0, IO1, IO2, IO3)............................... 8 5.3 Write Protect (/WP) ......................................................................................................... 8 5.4 HOLD (/HOLD)................................................................................................................ 8 5.5 Serial Clock (CLK) .......................................................................................................... 8 BLOCK DIAGRAM ...................................................................................................................... 9 FUNCTIONAL DESCRIPTION.................................................................................................. 10 7.1 SPI OPERATIONS ....................................................................................................... 10 7.1.1 7.1.2 7.1.3 7.1.4 7.2 WRITE PROTECTION .................................................................................................. 11 7.2.1 8. Standard SPI Instructions ............................................................................................... 10 Dual SPI Instructions ...................................................................................................... 10 Quad SPI Instructions ..................................................................................................... 10 Hold Function .................................................................................................................. 10 Write Protect Features .................................................................................................... 11 CONTROL AND STATUS REGISTERS ................................................................................... 12 8.1 STATUS REGISTER .................................................................................................... 12 8.2 8.1.1 8.1.2 8.1.3 8.1.4 8.1.5 8.1.6 8.1.7 8.1.8 8.1.9 BUSY .............................................................................................................................. 12 Write Enable Latch (WEL) .............................................................................................. 12 Block Protect Bits (BP2, BP1, BP0) ................................................................................ 12 Top/Bottom Block Protect (TB) ....................................................................................... 12 Sector/Block Protect (SEC) ............................................................................................. 12 Complement Protect (CMP) ............................................................................................ 12 Protection and Special One time Programming Setting .................................................. 13 Erase/Program Suspend Status (SUS) ........................................................................... 14 Security Register Lock Bits (LB[3:0]) – Volatile/Non-Volatile OTP Writable................. 14 8.1.1 8.1.2 8.1.3 Quad Enable (QE) .......................................................................................................... 14 Status Register Memory Protection (CMP = 0) ............................................................... 15 Status Register Memory Protection (CMP = 1) ............................................................... 16 INSTRUCTIONS ........................................................................................................... 17 8.2.1 8.2.2 8.2.3 8.3 Manufacturer and Device Identification ........................................................................... 17 Instruction Set Table 1 (Erase, Program Instructions)(1) ................................................. 18 Instruction Set Table 2 .................................................................................................... 18 Instruction Descriptions ................................................................................................ 20 8.3.1 Write Enable (06h) .......................................................................................................... 20 -2- Publication Release Date: August 22, 2017 -Revision I W25Q20EW 8.3.2 8.3.3 8.3.4 8.3.5 8.3.6 8.3.7 8.3.8 8.3.9 8.3.10 8.3.11 8.3.12 8.3.13 8.3.14 8.3.15 8.3.16 8.3.17 8.3.18 8.3.19 8.3.20 8.3.21 8.3.22 8.3.23 8.3.24 8.3.25 8.3.26 8.3.27 8.3.28 8.3.29 8.3.30 9. ELECTRICAL CHARACTERISTICS ......................................................................................... 49 9.1 Absolute Maximum Ratings (1)..................................................................................... 49 9.2 9.3 9.4 9.5 9.6 9.7 10. write Enable for Volatile Status Register (50h) ............................................................... 20 Write Disable (04h) ......................................................................................................... 21 Read Status Register-1 (05h) and Read Status Register-2 (35h) ................................... 21 Write Status Register (01h),Status Register-2 (31h) ....................................................... 22 Read Data (03h) ............................................................................................................. 23 Fast Read (0Bh).............................................................................................................. 24 Fast Read Dual Output (3Bh) ......................................................................................... 25 Fast Read Quad Output (6Bh) ........................................................................................ 26 Fast Read Dual I/O (BBh) ............................................................................................. 27 Fast Read Quad I/O (EBh)............................................................................................ 28 Set Burst with Wrap (77h) ............................................................................................. 29 Page Program (02h) ..................................................................................................... 30 Quad Input Page Program (32h) ................................................................................... 31 Sector Erase (20h) ........................................................................................................ 32 32KB Block Erase (52h)................................................................................................ 33 64KB Block Erase (D8h) ............................................................................................... 34 Chip Erase (C7h / 60h) ................................................................................................. 35 Erase / Program Suspend (75h) ................................................................................... 36 Erase / Program Resume (7Ah) .................................................................................... 37 Power-down (B9h) ........................................................................................................ 38 Release Power-down / Device ID (ABh) ....................................................................... 39 Read Manufacturer / Device ID (90h) ........................................................................... 41 Read Manufacturer / Device ID Dual I/O (92h) ............................................................. 42 Read Manufacturer / Device ID Quad I/O (94h) ............................................................ 43 Read Unique ID Number (4Bh) ..................................................................................... 44 Read JEDEC ID (9Fh) .................................................................................................. 45 Read SFDP Register (5Ah)........................................................................................... 46 Erase Security Registers (44h) ..................................................................................... 47 Program Security Registers (42h) ................................................................................. 48 Operating Ranges ......................................................................................................... 49 Power-up Timing and Write Inhibit Threshold .............................................................. 50 DC Electrical Characteristics: ....................................................................................... 51 AC Measurement Conditions ........................................................................................ 52 AC Electrical Characteristics: ....................................................................................... 53 AC Electrical Characteristics (cont’d) ........................................................................ 54 9.8 Serial Output Timing ..................................................................................................... 55 9.9 Serial Input Timing ........................................................................................................ 55 9.10 Hold Timing ................................................................................................................... 55 9.11 /WP Timing ................................................................................................................... 55 PACKAGE SPECIFICATION .................................................................................................... 56 10.1 8-Pin SOIC 150-mil (Package Code SN) ...................................................................... 56 10.2 8-Pin VSOP8 150-mil (Package Code SV) ................................................................... 57 10.3 8-Pad USON 2x3x0.6-mm^³ (Package Code UX) ....................................................... 58 -3- Publication Release Date: August 22, 2017 -Revision I W25Q20EW 11. 12. 10.4 8-Pad USON 4x3-mm (Package Code UU) ................................................................. 59 10.5 8-Ball WLCSP (Package Code BY) .............................................................................. 60 ORDERING INFORMATION..................................................................................................... 61 11.1 Valid Part Numbers and Top Side Marking .................................................................. 62 REVISION IISTORY.................................................................................................................. 63 -4- Publication Release Date: August 22, 2017 -Revision I W25Q20EW 1. GENERAL DESCRIPTION The W25Q20EW (2M-bit) Serial Flash memories provide a storage solution for systems with limited space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and storing voice, text and data. The device operates on a single 1.65V to 1.95V power supply with current consumption as low as 1µA for power-down. All devices are offered in spacesaving packages. The W25Q20EW array are organized into 1,024 programmable pages of 256-bytes each. Up to 256 bytes can be programmed at a time. The W25Q20EW have 64 erasable sectors, 8 erasable 32KB blocks and 4 erasable 64KB blocks respectively. The small 4KB sectors allow for greater flexibility in applications that require data and parameter storage. (See figure 2.) The W25Q20EW support the standard Serial Peripheral Interface (SPI), and a high performance Dual/Quad output as well as Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up to 104MHz are supported allowing equivalent clock rates of 208MHz (104MHz x 2) for Dual I/O and 416MHz (104MHz x 4) for Quad I/O when using the Fast Read Dual/Quad I/O instructions. These transfer rates can outperform standard Asynchronous 8 and 16-bit Parallel Flash memories. A Hold pin, Write Protect pin and programmable write protect, with top, bottom or complement array control, provide further control flexibility. Additionally, the device supports JEDEC standard manufacturer and device identification with a 64-bit Unique Serial Number. 2. FEATURES  Family of SpiFlash Memories – 2M-bit/256K-byte (262,144) – 256-byte per programmable page – Uniform 4KB Sectors, 32KB & 64KB Blocks  Advanced Security Features – Power Supply Lock-Down – Speical OTP protection – Top/Bottom, Complement array protection – Discoverable Parameters (SFDP) Register – 3X256-Byte Security Registers with OTP locks – Volatile & Non-volatile Status Register Bits  SPI with Single / Dual Outputs / I/O – Standard SPI: CLK, /CS, DI, DO, /WP, /Hold – Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold – Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3  Low Power, Wide Temperature Range – Single 1.65 to 1.95V supply – 1mA active current,