W25X10BV/20BV/40BV
1M-BIT, 2M-BIT AND 4M-BIT
SERIAL FLASH MEMORY WITH
4KB SECTORS AND DUAL I/O SPI
- 1-
Publication Release Date: August 20,, 2009
Preliminary -- Revision B
W25X10BV/20BV/40BV
Table of Contents
1.
GENERAL DESCRIPTION ......................................................................................................... 4
2.
FEATURES ................................................................................................................................. 4
3.
PIN CONFIGURATION SOIC 150-MIL / 208-MIL ...................................................................... 5
4.
PAD CONFIGURATION WSON 6X5-MM .................................................................................. 5
5.
PIN CONFIGURATION PDIP 300-MIL ....................................................................................... 6
6.
PIN DESCRIPTION SOIC 150 / 208-MIL, PDIP 300-MIL, WSON 6X5-MM............................... 6
6.1
Package Types ............................................................................................................... 7
6.2
Chip Select (/CS) ............................................................................................................ 7
6.3
Serial Data Input, Output and IOs (DI, DO, IO0 and IO1) .............................................. 7
6.4
Write Protect (/WP) ......................................................................................................... 7
6.5
HOLD (/HOLD) ............................................................................................................... 7
6.6
Serial Clock (CLK) .......................................................................................................... 7
7.
BLOCK DIAGRAM ...................................................................................................................... 8
8.
FUNCTIONAL DESCRIPTION ................................................................................................... 9
8.1
8.2
SPI OPERATIONS ......................................................................................................... 9
8.1.1
Standard SPI Instructions .................................................................................................9
8.1.2
Dual SPI Instructions ........................................................................................................9
8.1.3
Hold Function ...................................................................................................................9
WRITE PROTECTION.................................................................................................. 10
8.2.1
9.
Write Protect Features....................................................................................................10
CONTROL AND STATUS REGISTERS ................................................................................... 11
9.1
9.2
STATUS REGISTER .................................................................................................... 11
9.1.1
BUSY..............................................................................................................................11
9.1.2
Write Enable Latch (WEL) ..............................................................................................11
9.1.3
Block Protect Bits (BP2, BP1, BP0) ................................................................................11
9.1.4
Top/Bottom Block Protect (TB) .......................................................................................11
9.1.5
Reserved Bits .................................................................................................................11
9.1.6
Status Register Protect (SRP) ........................................................................................12
9.1.7
Status Register Memory Protection ................................................................................13
INSTRUCTIONS ........................................................................................................... 14
9.2.1
Manufacturer and Device Identification ..........................................................................14
9.2.2
Instruction Set ................................................................................................................15
9.2.3
Write Enable (06h)..........................................................................................................16
9.2.4
Write Disable (04h) .........................................................................................................16
9.2.5
Read Status Register (05h) ............................................................................................17
9.2.6
Write Status Register (01h) ............................................................................................18
9.2.7
Read Data (03h) .............................................................................................................19
9.2.8
Fast Read (0Bh) .............................................................................................................20
-2-
W25X10BV/20BV/40BV
10.
11.
12.
9.2.9
Fast Read Dual Output (3Bh) .........................................................................................21
9.2.10
Fast Read Dual I/O (BBh).............................................................................................22
9.2.11
Continuous Read Mode Bits (M7-0) .............................................................................24
9.2.12
Continuous Read Mode Reset (FFFFh) .......................................................................24
9.2.13
Page Program (02h) .....................................................................................................25
9.2.14
Sector Erase (20h) .......................................................................................................26
9.2.15
32KB Block Erase (52h) ...............................................................................................27
9.2.16
Block Erase (D8h) ........................................................................................................28
9.2.17
Chip Erase (C7h or 60h) ...............................................................................................29
9.2.18
Power-down (B9h) ........................................................................................................30
9.2.19
Release Power-down / Device ID (ABh) .......................................................................31
9.2.20
Read Manufacturer / Device ID (90h) ...........................................................................33
9.2.21
Read Manufacturer / Device ID Dual I/O (92h) .............................................................34
9.2.22
Read Unique ID Number (4Bh).....................................................................................35
9.2.23
JEDEC ID (9Fh) ...........................................................................................................36
ELECTRICAL CHARACTERISTICS ......................................................................................... 37
10.1
Absolute Maximum Ratings .......................................................................................... 37
10.2
Operating Ranges......................................................................................................... 37
10.3
Power-up Timing and Write Inhibit Threshold .............................................................. 38
10.4
DC Electrical Characteristics ........................................................................................ 39
10.5
AC Measurement Conditions ........................................................................................ 40
10.6
AC Electrical Characteristics ........................................................................................ 41
10.7
AC Electrical Characteristics (cont’d) ........................................................................... 42
10.8
Serial Output Timing ..................................................................................................... 43
10.9
Input Timing .................................................................................................................. 43
10.10
Hold Timing ................................................................................................................. 43
PACKAGE SPECIFICATION .................................................................................................... 44
11.1
8-Pin SOIC 150-mil (Package Code SN)...................................................................... 44
11.2
8-Pin SOIC 208-mil (Package Code SS) ...................................................................... 45
11.3
8-Pin PDIP 300-mil (Package Code DA) ...................................................................... 46
11.4
8-Contact 6x5mm WSON (Package Code ZP) ............................................................ 47
ORDERING INFORMATION .................................................................................................... 49
12.1
Valid Part Numbers and Top Side Marking .................................................................. 50
REVISION HISTORY ............................................................................................................................ 51
-3-
Publication Release Date: August 20, 2009
Preliminary -- Revision B
W25X10BV/20BV/40BV
1. GENERAL DESCRIPTION
The W25X10BV (1M-bit), W25X20BV (2M-bit) and the W25X40BV (4M-bit) Serial Flash memories
provides a storage solution for systems with limited space, pins and power. The 25X series offers
flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code
download applications as well as storing voice, text and data. The devices operate on a single 2.7V to
3.6V power supply with current consumption as low as 4mA active and 1µA for power-down. All
devices are offered in space-saving packages.
The W25X10BV/20BV/40BV arrays are organized into 512/1,024/2,048 programmable pages of 256bytes each. Up to 256 bytes can be programmed at a time using the Page Program instruction. Pages
can be erased in groups of 16 (sector erase), groups of 128 (32KB block erase), groups of 256 (block
erase) or the entire chip (chip erase). The W25X10BV/20BV/40BV has 32/64/128 erasable sectors
and 2/4/8 erasable 64KB blocks respectively. The small 4KB sectors allow for greater flexibility in
applications that require data and parameter storage. (See figure 2.)
The W25X10BV/20BV/40BV supports the standard Serial Peripheral Interface (SPI), and a high
performance dual output as well as Dual I/O SPI: Serial Clock, Chip Select, Serial Data DI (I/O0), DO
(I/O1). SPI clock frequencies of up to 104MHz are supported allowing equivalent clock rates of
208MHz when using the Fast Read Dual Output instruction. These transfer rates are comparable to
those of 8 and 16-bit Parallel Flash memories.
A Hold pin, Write Protect pin and programmable write protect, with top or bottom array control
features, provide further control flexibility. Additionally, the device supports JEDEC standard
manufacturer and device identification.
2. FEATURES
Software and Hardware Write Protection
– Write-Protect all or portion of memory
– Enable/Disable protection with /WP pin
– Top or bottom array protection
Family of Serial Flash Memories
– W25X10BV: 1M-bit/128K-byte (131,072)
– W25X20BV: 2M-bit/256K-byte (262,144)
– W25X40BV: 4M-bit/512K-byte (524,288)
– 256-bytes per programmable page
– Uniform 4KB Sectors, 32KB & 64KB Blocks
Flexible Architecture with 4KB sectors
– Sector Erase (4K-bytes)
– Block Erase (32K and 64K-byte)
– Page program up to 256 bytes
很抱歉,暂时无法提供与“W25X40BVSNIG”相匹配的价格&库存,您可以联系我们找货
免费人工找货