W27E040S-90

W27E040 512K × 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27E040 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 524288 × 8 bits that operates on a single 5 volt power supply. The W27E040 provides an electrical chip erase function. FEATURES • High speed access time: • • • • 90/120 nS (max.) Read operating current: 15 mA (typ.) Erase/Programming operating current 15 mA (typ.) Standby current: 5 µA (typ.) Single 5V power supply • +14V erase/+12V programming voltage • Fully static operation • All inputs and outputs directly TTL/CMOS compatible • Three-state outputs • Available packages: 32-pin 600 mil DIP, 450 mil SOP, PLCC and TSOP PIN CONFIGURATIONS V PP A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 Q0 Q1 Q2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 BLOCK DIAGRAM V CC A18 A17 A14 A13 A8 A9 A11 OE A10 CE Q7 Q6 Q5 Q4 Q3 CE OE CONTROL OUTPUT BUFFER Q0 . . Q7 32-pin DIP 26 25 24 23 22 21 20 19 18 17 A0 . . A18 VCC GND VPP DECODER CORE ARRAY A 1 2 4 A7 A6 A5 A4 A3 A2 A1 A0 Q0 5 6 7 8 9 10 11 12 13 A 1 5 3 A 1 6 2 VV PC PC 1 A 1 8 A 1 7 32 31 30 29 28 27 A14 A13 A8 A9 A11 OE A10 CE Q7 32-pin PLCC 26 25 24 23 22 21 PIN DESCRIPTION SYMBOL A0−A18 32 31 30 29 28 27 26 DESCRIPTION Address Inputs Data Inputs/Outputs Chip Enable Output Enable Program/Erase Supply Voltage Power Supply Ground No Connection 14 15 16 17 18 19 20 Q 1 Q 2 G N D Q 3 Q 4 Q 5 Q 6 A11 A9 A8 A13 A14 A17 A18 VCC VPP A16 A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 OE A10 CE Q7 Q6 Q5 Q4 Q3 GND Q2 Q1 Q0 A0 A1 A2 A3 Q0−Q7 CE OE VPP VCC GND NC 32-pin TSOP 25 24 23 22 21 20 19 18 17 -1- Publication Release Date: May 1997 Revision A1 W27E040 FUNCTIONAL DESCRIPTION Read Mode Like conventional UVEPROMs, the W27E040 has two control functions, both of which produce data at the outputs. CE is for power control and chip select. OE controls the output buffer to gate data to the output pins. When addresses are stable, the address access time (TACC) is equal to the delay from CE to output (TCE), and data are available at the outputs TOE after the falling edge of OE , if TACC and TCE timings are met. Erase Mode The erase operation is the only way to change data from "0" to "1." Unlike conventional UVEPROMs, which use ultraviolet light to erase the contents of the entire chip (a procedure that requires up to half an hour), the W27E040 uses electrical erasure. Generally, the chip can be erased within 100 mS by using an EPROM writer with a special erase algorithm. Erase mode is entered when VPP is raised to VPE (14V), VCC = VCE (5V), CE = VIL, (0.8V or below but higher than GND), OE = VIH (2V or above but lower than VCC), A9 = VHH (14V), A0 = VIL, and all other address pins equal VIL and data input pins equal VIH. Erase Verify Mode After an erase operation, all of the bytes in the chip must be verified to check whether they have been successfully erased to "1" or not. The erase verify mode automatically ensures a substantial erase margin. This mode will be entered after the erase operation if VPP = VPE (14V), CE = VIH, and OE = VIL. Program Mode Programming is performed exactly as it is in conventional UVEPROMs, and programming is the only way to change cell data from "1" to "0." The program mode is entered when VPP is raised to VPP (12V), VCC = VCP (5V), CE = VIL, OE = VIH, the address pins equal the desired address, and the input pins equal the desired inputs. Program Verify Mode All of the bytes in the chip must be verified to check whether they have been successfully programmed with the desired data or not. Hence, after each byte is programmed, a program verify operation should be performed. The program verify mode automatically ensures a substantial program margin. This mode will be entered after the program operation if VPP = VPP (12V), CE = VIH, OE = VIL and VCC = VCP (5V). Erase/Program Inhibit Erase or program inhibit mode allows parallel erasing or programming of multiple chips with different data. When CE = VIH, VPP = VPP/VPE (12V/14V), and VCC = 5V, erasing or programming of nontarget chips is inhibited, so that except for the CE and VPP, and VCC, the W27E040 may have common inputs. -2- W27E040 Standby Mode The standby mode significantly reduces VCC current. This mode is entered when CE = VIH, VPP = 5V, and VCC = 5V. In standby mode, all outputs are in a high impedance state, independent of OE . Two-line Output Control Since EPROMs are often used in large memory arrays, the W27E040 provides two control inputs for multiple memory connections. Two-line control provides for lowest possible memory power dissipation and ensures that data bus contention will not occur. System Considerations EPROM power switching characteristics require careful device decoupling. System designers are interested in three supply current issues: standby current levels (ISB), active current levels (ICC), and transient current peaks produced by the falling and rising edges of CE . Transient current magnitudes depend on the device output's capacitive and inductive loading. Two-line control and proper decoupling capacitor selection will suppress transient voltage peaks. Each device should have a 0.1 µ F ceramic capacitor connected between its VCC and GND. This high frequency, low inherentinductance capacitor should be placed as close as possible to the device. Additionally, for every eight devices, a 4.7 µF electrolytic capacitor should be placed at the array's power supply connection between VCC and GND. The bulk capacitor will overcome voltage slumps caused by PC board trace inductances. TABLE OF OPERATING MODES (VPP = 12V, VPE = 14V, VHH = 12V, VCP = 5V, X = VIH or VIL) MODE CE Read Output Disable Standby (TTL) Standby (CMOS) Program Program Verify Program Inhibit Erase Erase Verify Erase Inhibit Product Identifier-manufacturer Product Identifier-device VIL VIL VIH VCC ±0.3V VIL VIH VIH VIL VIH VIH VIL VIL OE VIL VIH X X VIH VIL X VIH VIL X VIL VIL A0 X X X X X X X VIL X X VIL VIH PINS A9 X X X X X X X VPE X X VHH VHH VCC VCC VCC VCC VCC VCP VCP VCP VCE VCE VCE VCC VCC VPP VCC VCC VCC VCC VPP VPP VPP VPE VPE VPE VCC VCC OUTPUTS DOUT High Z High Z High Z DIN DOUT High Z DIH DOUT High Z DA (Hex) 86 (Hex) -3- Publication Release Date: May 1997 Revision A1 W27E040 DC CHARACTERISTICS Absolute Maximum Ratings PARAMETER Ambient Temperature with Power Applied Storage Temperature Voltage on all pins with Respect to Ground Except VPP, A9 and VCC pins Voltage on VPP Pin with Respect to Ground Voltage on A9 Pin with Respect to Ground Voltage on VCC Pin with Respect to Ground RATING -55 to +125 -65 to +125 -0.5 to VCC +0.5 -0.5 to +14.5 -0.5 to +14.5 -0.5 to +7 UNIT °C °C V V V V Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the device. DC Erase Characteristics (TA = 25° C ±5° C, VCC = 5.0V ±10%, VHH = 14V) PARAMETER SYM. CONDITIONS MIN. LIMITS TYP. 14 14 5.0 MAX. 10 30 30 0.8 5.5 0.45 14.25 14.25 5.5 UNIT µA mA mA V V V V V V Input Load Current VCC Erase Current VPP Erase Current Input Low Voltage Input High Voltage Output Low Voltage (Verify) Output High Voltage (Verify) A9 Erase Voltage VPP Erase Voltage VCC Supply Voltage (Erase) ILI ICP IPP VIL VIH VOL VOH VID VPE VCE VIN = VIL or VIH CE = VIL CE = VIL IOL = 2.1 mA IOH = -0.4 mA - -10 -0.3 2.4 2.4 13.75 13.75 4.5 Note: VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP. CAPACITANCE (VCC = 5V, TA = 25° C, f = 1 MHz) PARAMETER Input Capacitance Output Capacitance SYMBOL CIN COUT CONDITIONS VIN = 0V VOUT = 0V MAX. 6 12 UNIT pF pF -4- W27E040 AC CHARACTERISTICS AC Test Conditions PARAMETER Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level Output Load 0.45V to 2.4V 10 nS 0.8V/2.0V CL = 100 pF, IOH/IOL = -0.4 mA/2.1 mA CONDITIONS AC Test Load and Waveform +1.3V (IN914) 3.3K ohm DOUT 100 pF (Including Jig and Scope) Input Test Points 2.4V 0.45V 2.0V 0.8V Output Test Points 2.0V 0.8V -5- Publication Release Date: May 1997 Revision A1 W27E040 READ OPERATION DC CHARACTERISTICS (VCC = 5.0V ±10%, TA = 0 to 70° C) PARAMETER SYM. CONDITIONS MIN. LIMITS TYP. 5 MAX. 5 10 1.0 100 30 UNIT µA µA mA µA mA Input Load Current Output Leakage Current VCC Standby Current ILI ILO ISB ISB1 VIN = 0V to VCC VOUT = 0V to VCC CE = VIH CE = VCC ±0.2V CE = VIL IOUT = 0 mA f = 5 MHz VPP = VCC IOL = 2.1 mA IOH = -0.4 mA - -5 -10 - VCC Operating Current ICC VPP Operating Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage VPP Operating Voltage IPP VIL VIH VOL VOH VPP -0.3 2.0 2.4 VCC -0.7 - 10 0.8 VCC +0.5 0.4 VCC µA V V V V V READ OPERATION AC CHARACTERISTICS (VCC = 5.0V ±10%, TA = 0 to 70° C) PARAMETER SYM. W27E040-90 MIN. MAX. 90 90 40 30 - W27E040-12 MIN. 120 0 MAX. 120 120 55 30 - UNIT Read Cycle Time Chip Enable Access Time Address Access Time Output Enable Access Time OE High to High-Z Output Output Hold from Address Change TRC TCE TACC TOE TDF TOH 90 0 nS nS nS nS nS nS Note: VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP. -6- W27E040 DC PROGRAMMING CHARACTERISTICS (VCC = 5.0V ±10%, TA = 25° C ±5° C) PARAMETER Input Load Current VCC Program Current VPP Program Current Input Low Voltage Input High Voltage Output Low Voltage (Verify) Output High Voltage (Verify) A9 Silicon I.D. Voltage VPP Program Voltage VCC Supply Voltage (Program) SYM. ILI ICP IPP VIL VIH VOL VOH VID VPP VCP CONDITIONS MIN. VIN = VIL or VIH CE = VIL CE = VIL IOL = 2.1 mA IOH = -0.4 mA -10 -0.3 2.4 2.4 11.5 11.75 4.5 LIMITS TYP. 12.0 12.0 5.0 MAX. 10 30 30 0.8 5.5 0.45 12.5 12.25 5.5 UNIT µA mA mA V V V V V V V AC PROGRAMMING/ERASE CHARACTERISTICS (VCC = 5.0V ±10%, TA = 25° C ±5° C) PARAMETER VPP Setup Time Address Setup Time Data Setup Time CE Program Pulse Width CE Erase Pulse Width Data Hold Time OE Setup Time Data Valid from OE OE High to Output High Z Address Hold Time Address Hold Time after CE High (Erase) SYM. MIN. TVPS TAS TDS TPWP TPWE TDH TOES TOEV TDFP TAH TAHC 2.0 2.0 2.0 95 95 2.0 2.0 0 0 2.0 LIMITS TYP. 100 100 MAX. 105 105 150 130 - UNIT µS µS µS µS mS µS µS nS nS µS µS Note: VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP. -7- Publication Release Date: May 1997 Revision A1 W27E040 TIMING WAVEFORMS AC Read Waveform VIH Address VIL VIH CE VIL Address Valid TCE VIH OE VIL TACC Outputs High Z TOE TOH Valid Output High Z TDF Erase Waveform Read Read Manufacturer Device SID SID A9 = 12.0V A0= V IH Others = VIL A0 = VIL Others = V IL TACC DA TACC 86 TDS 14.0V 5.0V VPP VIH CE VIL TOE VIH OE VIL TOEV TOE TPWE TOES TOE TCE 5V TVPS TAS TARC Data All One TAHC Chip Erase A9 = 14.0V Erase Verify Blank Check Read Verify Address VIH VIL Others = VIL Address Stable TDFP DOUT TAH DOUT Address Stable Address Stable TACC DOUT Data -8- W27E040 Timing Waveforms, continued Programming Waveform Program VIH Address VIL TAS Data Address Stable Program Verify Address Stable TDFP Read Verify Address Valid TACC DOUT DOUT Data In Stable DOUT TDS 12.0V VPP 5.0V VIH CE VIL VIH OE VIL TPWP TDH TAH 5V TVPS TOE TOES TOEV -9- Publication Release Date: May 1997 Revision A1 W27E040 SMART PROGRAMMING ALGORITHM Start Address = First Location Vcc = 5V Vpp = 12V X=0 Program One 100 µ Pulse S Increment X Yes X = 25? No Fail Verify One Byte Verify One Byte Fail Pass Increment Address No Last Address? Yes Pass *Program whole chip without data verification and read Vcc = 5V Vpp = 5V Compare All Bytes to Original Data Pass Pass Device Fail Fail Device *: Program the whole chip again without data verification and read. - 10 - W27E040 SMART ERASE ALGORITHM Start X=0 Vcc = 5V Vpp = 14V A9 = 14V; A0 = V IL Chip Erase 100 mS Pulse Address = First Location Increment X No Erase Verify Pass Yes Increment Address No Last Address? Yes Vcc = 5V Vpp = 5V Fail X = 20? Compare All Bytes to FFs (HEX) Pass Pass Device Fail Fail Device - 11 - Publication Release Date: May 1997 Revision A1 W27E040 ORDERING INFORMATION PART NO. ACCESS TIME (nS) 90 120 90 120 90 120 90 120 POWER SUPPLY CURRENT MAX. (mA) 30 30 30 30 30 30 30 30 STANDBY VCC CURRENT MAX. (µ A) 100 100 100 100 100 100 100 100 PACKAGE W27E040-90 W27E040-12 W27E040S-90 W27E040S-12 W27E040P-90 W27E040P-12 W27E040T-90 W27E040T-12 Notes: 600 mil DIP 600 mil DIP 450 mil SOP 450 mil SOP 32-pin PLCC 32-pin PLCC Type One TSOP Type One TSOP 1. Winbond reserves the right to make changes to its products without prior notice. 2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications where personal injury might occur as a consequence of product failure. - 12 - W27E040 PACKAGE DIMENSIONS 32-pin P-DIP Dimension in inches Dimension in mm Symbol Min. Nom. Max. Min. Nom. Max. 0.210 0.010 0.150 0.016 0.048 0.008 0.155 0.018 0.050 0.010 1.650 0.590 0.545 0.090 0.120 0 0.630 0.650 0.600 0.550 0.100 0.130 0.160 0.022 0.054 0.014 1.660 0.610 0.555 0.110 0.140 15 0.670 0.085 14.99 13.84 2.29 3.05 0 16.00 16.51 0.25 3.81 0.41 1.22 0.20 3.94 0.46 1.27 0.25 41.91 15.24 13.97 2.54 3.30 4.06 0.56 1.37 0.36 42.16 15.49 14.10 2.79 3.56 15 17.02 2.16 5.33 D 32 17 E1 A A1 A2 B B1 c D E E1 e1 L a 1 16 eA S Notes: E c S A A2 A1 Base Plane Seating Plane L B B1 e1 a eA 1. Dimensions D Max. & S include mold flash or tie bar burrs. 2. Dimension E1 does not include interlead flash. 3. Dimensions D & E1 include mold mismatch and . are determined at the mold parting line. 4. Dimension B1 does not include dambar protrusion/intrusion. 5. Controlling dimension: Inches 6. General appearance spec. should be based on final visual inspection spec. 32-Lead SO Wide Body Dimension In Inches Dimension In mm Symbol 32 17 Min. Nom. Max. 0.118 0.004 0.101 0.014 0.006 0.106 0.016 0.008 0.805 0.440 0.044 0.546 0.023 0.047 0.445 0.050 0.556 0.031 0.055 0.111 0.020 0.012 0.817 0.450 0.056 0.556 0.039 0.063 0.036 0.004 0 10 Min. Nom. Max. 3.00 0.10 2.57 0.36 0.15 2.69 0.41 0.20 20.45 11.18 1.12 13.87 0.58 1.19 11.30 1.27 14.12 0.79 1.40 2.82 0.51 0.31 20.75 11.43 1.42 14.38 0.99 1.60 0.91 0.10 0 10 e1 E HE L Detail F 1 16 b A A1 A2 b c D E e HE L LE S y θ Notes: D e1 c A2 S y e A1 A LE Seating Plane See Detail F 1. Dimensions D Max. & S include mold flash or tie bar burrs. 2. Dimension b does not include dambar protrusion/intrusion. 3. Dimensions D & E include mold mismatch . and determined at the mold parting line. 4. Controlling dimension: Inches. 5. General appearance spec should be based on final visual inspection spec. - 13 - Publication Release Date: May 1997 Revision A1 W27E040 Package Dimensions, continued 32-Lead PLCC HE E 4 1 32 30 Symbol 5 29 Dimension In Inches Dimension In mm Min. Nom. 0.020 0.105 0.026 0.016 0.008 0.547 0.447 0.044 0.490 0.390 0.585 0.485 0.075 0.110 0.028 0.018 0.010 0.550 0.450 0.050 0.51 0 0.410 0.590 0.49 0 0.090 Max. 0.140 Min. Nom. 0.50 Max. 3.56 GD D HD 13 21 14 20 c A A1 A2 b1 b c D E e GD GE HD HE L y 0.115 0.032 0.022 0.014 0.553 0.453 0.056 0.530 0.430 0.595 0.495 0.095 0.004 2.67 0.66 0.41 0.20 13.89 11.35 1.12 12.45 9.91 14.86 12.32 1.91 2.80 0.71 0.46 0.25 13.97 11.43 1.27 12.9 5 10.41 14.99 12.45 2.29 2.93 0.81 0.56 0.35 14.05 11.51 1.42 13.46 10.92 15.11 12.57 2.41 0.10 θ 0° 10° 0° 10° Notes: L A2 A e Seating Plane GE b b1 A1 y 1. Dimensions D & E do not include interlead flash. 2. Dimension b does not include dambar protrusion/intrusion. 3. Controlling dimension: Inches. 4. General appearance spec. should be based on fina visual inspection sepc. 32-Lead TSOP HD Symbol Dimension In Inches Min. Nom. Max. 0.047 0.006 0.041 0.009 0.007 Dimension In mm Min. Nom. Max. 1.20 0.15 1.05 0.23 0.17 18.50 8.10 20.20 D c A A1 A2 __ 0.002 0.037 0.007 __ __ 0.039 0.008 __ 0.05 0.95 0.17 0.12 __ __ 1.00 0.20 0.15 M e E b c D E HD e L L1 A A2 0.005 0.006 0.720 0.311 0.780 0.724 0.315 0.787 0.020 0.020 0.031 0.10(0.004) 0.728 18.30 18.40 0.319 7.90 8.00 20.00 0.50 0.50 0.80 b 0.795 19.80 __ 0.016 __ 0.024 __ 0.40 __ 0.60 __ 0.000 1 __ 0.004 5 __ 0.00 1 __ 0.10 5 Y Y __ 3 __ 3 θ L L1 A1 θ Note: Controlling dimension: Millimeters - 14 - W27E040 Headquarters Winbond Electronics (H.K.) Ltd. Rm. 803, World Trade Square, Tower II, No. 4, Creation Rd. III, 123 Hoi Bun Rd., Kwun Tong, Science-Based Industrial Park, Kowloon, Hong Kong Hsinchu, Taiwan TEL: 852-27513100 TEL: 886-3-5770066 FAX: 852-27552064 FAX: 886-3-5796096 http://www.winbond.com.tw/ Voice & Fax-on-demand: 886-2-27197006 Winbond Electronics North America Corp. Winbond Memory Lab. Winbond Microelectronics Corp. Winbond Systems Lab. 2727 N. First Street, San Jose, CA 95134, U.S.A. TEL: 408-9436666 FAX: 408-5441798 Taipei Office 11F, No. 115, Sec. 3, Min-Sheng East Rd., Taipei, Taiwan TEL: 886-2-27190505 FAX: 886-2-27197502 Note: All data and specifications are subject to change without notice. - 15 - Publication Release Date: May 1997 Revision A1