W29C102P-90B

W29C102 64K × 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29C102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29C102 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers. FEATURES • Single 5-volt program and erase operations • Fast page-write operations • Low power consumption − 128 words per page − Page program cycle: 10 mS (max.) − Effective word-program cycle time: 39 µS − Optional software-protected data write • Fast chip-erase operation: 50 mS • Read access time: 70/90/120 nS • Typical page program/erase cycles: 1K/10K • Ten-year data retention • Software and hardware data protection − Active current: 25 mA (typ.) − Standby current: 20 µA (typ.) • Automatic program timing with internal VPP generation • End of program detection − Toggle bit − Data polling • Latched address and data • TTL compatible I/O • JEDEC standard word-wide pinouts • Available packages: 40-pin 600 mil DIP, TSOP and 44-pin PLCC -1- Publication Release Date: March 1998 Revision A3 W29C102 PIN CONFIGURATIONS NC CE DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 GND DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0 OE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 BLOCK DIAGRAM VDD WE NC A15 A14 A13 A12 A11 A10 A9 GND A8 A7 A6 A5 A4 A3 A2 A1 A0 V DD VSS CE OE WE CONTROL OUTPUT BUFFER 40-pin DIP 32 31 30 29 28 27 26 25 24 23 22 21 DQ0 . . DQ15 A0 A9 A10 A11 A12 A13 A14 A15 NC WE VDD NC CE DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 40-pin TSOP 32 31 30 29 28 27 26 25 24 23 22 21 GND A8 A7 A6 A5 A4 A3 A2 A1 A0 OE DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 GND . . A15 DECODER CORE ARRAY PIN DESCRIPTION DDD/ Q Q QC N N 13 14 15 E C C 6 5 4 3 2 1 V D D / WN EC AA 11 54 SYMBOL 39 38 37 36 PIN NAME Address Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enable Power Supply Ground No Connection 44 43 42 41 40 DQ12 DQ11 DQ10 DQ9 DQ8 GND NC DQ7 DQ6 DQ5 DQ4 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 A13 A12 A11 A10 A9 GND NC A8 A7 A6 A5 A0−A15 DQ0−DQ15 CE OE WE VDD GND NC 44-pin PLCC 35 34 33 32 31 30 29 DDDD QQQQ 3210 /NAA OC01 E AAA 234 -2- W29C102 FUNCTIONAL DESCRIPTION Read Mode The read operation of the W29C102 is controlled by CE and OE , both of which have to be low for the host to obtain data from the outputs. CE is used for device selection. When CE is high, the chip is de-selected and only standby power will be consumed. OE is the output control and is used to gate data from the output pins. The data bus is in high impedance state when either CE or OE is high. Refer to the timing waveforms for further details. Page Write Mode The W29C102 is programmed on a page basis. Every page contains 128 words of data. If a word of data within a page is to be changed, data for the entire page must be loaded into the device. Any word that is not loaded will be erased to "FFh" during programming of the page. The write operation is initiated by forcing CE and WE low and OE high. The write procedure consists of two steps. Step 1 is the word-load cycle, in which the host writes to the page buffer of the device. Step 2 is an internal programming cycle, during which the data in the page buffers are simultaneously written into the memory array for non-volatile storage. During the word-load cycle, the addresses are latched by the falling edge of either CE or WE , whichever occurs last. The data are latched by the rising edge of either CE or WE , whichever occurs first. If the host loads a second word into the page buffer within a word-load cycle time (TBLC) of 200 µS, after the initial word-load cycle, the W29C102 will stay in the page load cycle. Additional words can then be loaded consecutively. The page load cycle will be terminated and the internal programming cycle will start if no additional word is loaded into the page buffer. A7 to A15 specify the page address. All words that are loaded into the page buffer must have the same page address. A0 to A6 specify the word address within the page. The words may be loaded in any order; sequential loading is not required. In the internal programming cycle, all data in the page buffers, i.e., 128 words of data, are written simultaneously into the memory array. The typical programming time is 5 mS. The entire memory array can be written in 2.6 seconds. Before the completion of the internal programming cycle, the host is free to perform other tasks such as fetching data from other locations in the system to prepare to write the next page. Software-protected Data Write The device provides a JEDEC-approved optional software-protected data write. Once this scheme is enabled, any write operation requires a series of three-word program commands (with specific data to a specific address) to be performed before the data load operation. The three-word load command sequence begins the page load cycle, without which the write operation will not be activated. This write scheme provides optimal protection against inadvertent write cycles, such as cycles triggered by noise during system power-up and power-down. The W29C102 is shipped with the software data protection enabled. To enable the software data protection scheme, perform the three-word command cycle at the beginning of a page load cycle. The device will then enter the software data protection mode, and any subsequent write operation must be preceded by the three-word program command cycle. Once enabled, the software data protection will remain enabled unless the disable commands are issued. A power transition will not reset the -3- Publication Release Date: March 1998 Revision A3 W29C102 software data protection feature. To reset the device to unprotected mode, a six-word command sequence is required. See Table 3 for specific codes and Figure 10 for the timing diagram. Hardware Data Protection The integrity of the data stored in the W29C102 is also hardware protected in the following ways: (1) Noise/Glitch Protection: A WE pulse of less than 15 nS in duration will not initiate a write cycle. (2) VDD Power Up/Down Detection: The programming operation is inhibited when VDD is less than 2.5V. (3) Write Inhibit Mode: Forcing OE low, CE high, or WE high will inhibit the write operation. This prevents inadvertent writes during power-up or power-down periods. (4) VDD power-on delay: When VDD has reached its sense level, the device will automatically time-out 5 mS before any write (erase/program) operation. Data Polling (DQ7 & DQ15)- Write Status Detection The W29C102 includes a data polling feature to indicate the end of a programming cycle. When the W29C102 is in the internal programming cycle, any attempt to read DQ7 and/or DQ15 of the last word loaded during the page/word-load cycle will receive the complement of the true data. Once the programming cycle is completed. DQ7 will show the true data. Toggle Bit (DQ6 & DQ14)- Write Status Detection In addition to data polling, the W29C102 provides another method for determining the end of a program cycle. During the internal programming cycle, any consecutive attempts to read DQ6 and/or DQ14 will produce alternating 0's and 1's. When the programming cycle is completed, this toggling between 0's and 1's will stop. The device is then ready for the next operation. 5-Volt-only Software Chip Erase The chip-erase mode can be initiated by a six-word command sequence. After the command loading cycles, the device enters the internal chip erase mode, which is automatically timed and will be completed in 50 mS. The host system is not required to provide any control or timing during this operation. Product Identification The product ID operation outputs the manufacturer code and device code. Programming equipment automatically matches the device with its proper erase and programming algorithms. The manufacturer and device codes can be accessed by software or hardware operation. In the software access mode, a six-word command sequence can be used to access the product ID. A read from address 0000H outputs the manufacturer code (00DAh). A read from address 0001H outputs the device code (004Fh). The product ID operation can be terminated by a three-word command sequence. In the hardware access mode, access to the product ID is activated by forcing CE and OE low, WE high, and raising A9 to 12 volts. -4- W29C102 TABLE OF OPERATING MODES Operating Mode Selection (VHH = 12V) MODE CE Read Write Standby Write Inhibit Output Disable 5-Volt Software Chip Erase Product ID VIL VIL VIH X X X VIL VIL VIL OE VIL VIH X VIL X VIH VIH VIL VIL WE VIH VIL X X VIH X VIL VIH VIH AIN AIN X X X X AIN PINS ADDRESS Dout Din High Z High Z/DOUT High Z/DOUT High Z DIN Manufacturer Code 00DA (Hex) Device Code 004F (Hex) DQ. A0 = VIL; A1−A15 = VIL; A9 = VHH A0 = VIH; A1−A15 = VIL; A9 = VHH -5- Publication Release Date: March 1998 Revision A3 W29C102 Command Codes for Software Data Protection BYTE SEQUENCE 0 Write 1 Write 2 Write 3 Write 4 Write 5 Write TO ENABLE PROTECTION ADDRESS 5555H 2AAAH 5555H DATA AAAAH 5555H A0A0H TO DISABLE PROTECTION ADDRESS 5555H 2AAAH 5555H 5555H 2AAAH 5555H DATA AAAAH 5555H 8080H AAAAH 5555H 2020H Software Data Protection Acquisition Flow Software Data Protection Enable Flow Load data AAAA to address 5555 Software Data Protection Disable Flow Load data AAAA to address 5555 Load data 5555 to address 2AAA Load data 5555 to address 2AAA Load data A0A0 to address 5555 Load data 8080 to address 5555 (Optional page-load operation) Sequentially load up to 128 words of page data Load data AAAA to address 5555 Pause 10 mS Load data 5555 to address 2AAA Exit Load data 2020 to address 5555 Pause 10 mS Exit Notes for software program code: Data Format: DQ15−DQ0 (Hex) Address Format: A14−A0 (Hex) -6- W29C102 Command Codes for Software Chip Erase BYTE SEQUENCE 0 Write 1 Write 2 Write 3 Write 4 Write 5 Write ADDRESS 5555H 2AAAH 5555H 5555H 2AAAH 5555H DATA AAAAH 5555H 8080H AAAAH 5555H 1010H Software Chip Erase Acquisition Flow Load data AAAA to address 5555 Load data 5555 to address 2AAA Load data 8080 to address 5555 Load data AAAA to address 5555 Load data 5555 to address 2AAA Load data 1010 to address 5555 Pause 50 mS Exit Notes for software chip erase: Data Format: DQ15−DQ0 (Hex) Address Format: A14−A0 (Hex) -7- Publication Release Date: March 1998 Revision A3 W29C102 Command Codes for Product Identification BYTE SEQUENCE ALTERNATE SOFTWARE (5) PRODUCT IDENTIFICATION ENTRY ADDRESS 0 Write 1 Write 2 Write 3 Write 4 Write 5 Write 5555H 2AAAH 5555H - SOFTWARE PRODUCT IDENTIFICATION ENTRY ADDRESS 5555H 2AAAH 5555H 5555H 2AAAH 5555H SOFTWARE PRODUCT IDENTIFICATION EXIT ADDRESS 5555H 2AAAH 5555H - DATA AAH 55H 90H - DATA AAH 55H 80H AAH 55H 60H DATA AAH 55H F0H - Pause 10 µ S Pause 10 µ S Pause 10 µ S Software Product Identification Acquisition Flow Product Identification Entry (1) Product Identification Mode (2, 3) Load data AAAA to address 5555 Product Identification Exit (1) Load data 5555 to address 2AAA Load data AAAA to address 5555 Load data 8080 to address 5555 Read address = 0 data = 00DA Load data 5555 to address 2AAA Load data AAAA to address 5555 Load data F0F0 to address 5555 Load data 5555 to address 2AAA Read address = 1 data = 004F Pause 10 µS Load data 6060 to address 5555 (4) Normal Mode Pause 10 µS Notes for software product identification: (1) Data format: DQ15−DQ0 (Hex); address format: A14−A0 (Hex). (2) A1−A15 = VIL; manufacture code is read for A0 = VIL; device code is read for A0 = VIH. (3) The device does not remain in identification mode if power down. (4) The device returns to standard operation mode. (5) This product supports both the JEDEC standard 3 byte command code sequence and original 6 byte command code sequence. For new designs, Winbond recommends that the 3 byte command code sequence be used. -8- W29C102 DC CHARACTERISTICS Absolute Maximum Ratings PARAMETER Power Supply Voltage to Vss Potential Operating Temperature Storage Temperature D.C. Voltage on Any Pin to Ground Potential except OE Transient Voltage (