W39L040AP70Z

W39L040A Data Sheet 512K × 8 CMOS FLASH MEMORY Table of Contents1. 2. 3. 4. 5. 6. GENERAL DESCRIPTION ......................................................................................................... 3 FEATURES ................................................................................................................................. 3 PIN CONFIGURATIONS ............................................................................................................ 4 BLOCK DIAGRAM ...................................................................................................................... 4 PIN DESCRIPTION..................................................................................................................... 4 FUNCTIONAL DESCRIPTION ................................................................................................... 5 6.1 Device Bus Operation..................................................................................................... 5 6.1.1 6.1.2 6.1.3 6.1.4 6.1.5 Read Mode.......................................................................................................................5 Write Mode .......................................................................................................................5 Standby Mode ..................................................................................................................5 Output Disable Mode........................................................................................................5 Auto-select Mode..............................................................................................................5 6.2 Data Protection ............................................................................................................... 6 6.2.1 6.2.2 6.2.3 6.2.4 Low VDD Inhibit................................................................................................................6 Write Pulse "Glitch" Protection .........................................................................................6 Logical Inhibit ...................................................................................................................6 Power-up Write and Read Inhibit......................................................................................6 6.3 Command Definitions ..................................................................................................... 6 6.3.1 6.3.2 6.3.3 6.3.4 6.3.5 Read Command ...............................................................................................................6 Auto-select Command ......................................................................................................7 Byte Program Command ..................................................................................................7 Chip Erase Command ......................................................................................................7 Sector Erase Command ...................................................................................................8 6.4 Write Operation Status ................................................................................................... 8 6.4.1 6.4.2 DQ7: #Data Polling...........................................................................................................8 DQ6: Toggle Bit................................................................................................................9 6.5 Table of Operating Modes .............................................................................................. 9 6.5.1 6.5.2 6.5.3 6.5.4 Device Bus Operations.....................................................................................................9 Auto-select Codes (High Voltage Method) .......................................................................9 Sector Address Table .....................................................................................................10 Command Definitions .....................................................................................................10 6.6 6.7 Embedded Programming Algorithm ............................................................................. 11 Embedded Erase Algorithm.......................................................................................... 12 Publication Release Date:April 14, 2005 Revision A3 -1- W39L040A 6.8 6.9 7. 7.1 7.2 7.3 7.4 Embedded #Data Polling Algorithm.............................................................................. 13 Embedded Toggle Bit Algorithm ................................................................................... 13 Absolute Maximum Ratings .......................................................................................... 14 DC Operating Characteristics....................................................................................... 14 Pin Capacitance............................................................................................................ 14 AC Characteristics ........................................................................................................ 15 7.4.1 7.4.2 7.4.3 7.4.4 7.4.5 7.4.6 AC Test Conditions.........................................................................................................15 AC Test Load and Waveform .........................................................................................15 Read Cycle Timing Parameters......................................................................................16 Erase/Program Cycle Timing Parameters ......................................................................16 Power-up Timing ............................................................................................................17 #Data Polling and Toggle Bit Timing Parameters ...........................................................17 ELECTRICAL CHARACTERISTICS......................................................................................... 14 8. TIMING WAVEFORMS ............................................................................................................. 18 8.1 8.2 8.3 8.4 8.5 8.6 8.7 Read Cycle Timing Diagram......................................................................................... 18 #WE Controlled Command Write Cycle Timing Diagram............................................. 18 #CE Controlled Command Write Cycle Timing Diagram.............................................. 19 Chip Erase Timing Diagram ......................................................................................... 19 Sector Erase Timing Diagram ...................................................................................... 20 #Data Polling Timing Diagram ...................................................................................... 20 Toggle Bit Timing Diagram ........................................................................................... 21 9. 10. 11. ORDERING INFORMATION .................................................................................................... 22 HOW TO READ THE TOP MARKING...................................................................................... 23 PACKAGE DIMENSIONS ......................................................................................................... 24 11.1 11.2 11.3 11.4 32L PLCC ..................................................................................................................... 24 32L PDIP....................................................................................................................... 24 32L TSOP (8 x 20 mm)................................................................................................. 25 32L STSOP (8 x 14 mm) .............................................................................................. 25 12. VERSION HISTORY ................................................................................................................. 26 -2- W39L040A 1. GENERAL DESCRIPTION The W39L040A is a 4Mbit, 3V/3.3V CMOS flash memory organized as 512K × 8 bits. For flexible erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes. The byte-wide (× 8) data appears on DQ7 − DQ0. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W39L040A results in fast program/erase operations with extremely low current consumption (compared to other comparable 3.3-volt flash memory products). The device can also be programmed and erased by using standard EPROM programmers. 2. FEATURES • 3V/3.3-Volt Read/Erase/Program Operations − 3.0 ~ 3.6V for 70nS − 2.7 ~ 3.6V for 90nS • • • Typical program/erase cycles: 10K Twenty-year data retention Low power consumption − Active read current: 7 mA at 5MHz (typ.) − Active program/erase current: 15 mA at 5MHz (typ.) − Standby current: 0.2 μA (typ.) End of program detection − Software method: Toggle bit/#Data polling JEDEC standard byte-wide pinouts Available packages: 32-pin PLCC Lead free, 32-pin STSOP (8 x 14 mm) Lead free, 32-pin PDIP and 32-pin TSOP (8 x 20 mm) • Fast Program operation: − Byte-by-Byte programming: 9 μS (typ.) Fast Erase operation: − Chip Erase cycle time: 6 S (typ.) − Sector Erase cycle time: 0.7 S (typ.) • • • • • • • Read access time: 70/90 nS 8 Even sectors with 64K bytes Any individual sector can be erased -3- Publication Release Date: April 14, 2005 Revision A3 W39L040A 3. PIN CONFIGURATIONS A 1 2 4 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 A 1 5 3 A 1 6 2 A 1 8 1 V D D # W E A 1 7 4. BLOCK DIAGRAM 32 31 30 29 28 27 26 A14 A13 A8 A9 A11 #OE A10 #CE DQ7 VDD VSS #CE #OE #WE OUTPUT BUFFER DQ0 . . 32L PLCC CONTROL 25 24 23 22 21 DQ7 D Q 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 D Q 2 VD SQ S3 D Q 4 D Q 5 D Q 6 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A0 #OE A10 #CE DQ7 DQ6 DQ5 DQ4 DQ3 V SS DQ2 DQ1 DQ0 A0 A1 A2 A3 A11 A9 A8 A13 A14 A17 #WE VDD A18 A16 A15 A12 A7 A6 A5 A4 . . A18 DECODER CORE ARRAY 32L STSOP and 32L TSOP 5. PIN DESCRIPTION SYMBOL PIN NAME A18 A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 VDD #WE A17 A14 A13 A8 A9 A11 #OE A10 #CE DQ7 DQ6 DQ5 DQ4 DQ3 A0 − A18 DQ0 − DQ7 #CE #OE #WE VDD VSS Address Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enable Power Supply Ground 32-pin DIP 26 25 24 23 22 21 20 19 18 17 -4- W39L040A 6. FUNCTIONAL DESCRIPTION 6.1 Device Bus Operation 6.1.1 Read Mode The read operation of the W39L040A is controlled by #CE and #OE, both of which have to be low for the host to obtain data from the outputs. #CE is used for device selection. When #CE is high, the chip is de-selected and only standby power will be consumed. #OE is the output control and is used to gate data from the output pins. The data bus is in high impedance state when either #CE or #OE is high. Refer to the timing waveforms for further details. 6.1.2 Write Mode Device erasure and programming are accomplished via the command register. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. The command register itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information needed to execute the command. The command register is written by bringing #WE to logic low state; while #CE is at logic low state and #OE is at logic high state. Addresses are latched on the falling edge of #WE or #CE, whichever happens later; while data is latched on the rising edge of #WE or #CE, whichever happens first. Standard microprocessor write timings are used. Refer to AC Write Characteristics and the Erase/Program Waveforms for specific timing parameters. 6.1.3 Standby Mode The Standby mode is achieved with the #CE input held at VDD ±0.3V and the current is typically reduced to less than 5μA (max). In the standby mode the outputs are in the high impedance state, independent of the #OE input. 6.1.4 Output Disable Mode With the #OE input at a logic high level (VIH), output from the device is disabled. This will cause the output pins to be in a high impedance state. 6.1.5 Auto-select Mode The auto-select mode allows the reading of a binary code from the device and will identify its manufacturer and type. This mode is intended for use by programming equipment for the purpose of automatically matching the device to be programmed with its corresponding programming algorithm. This mode is functional over the entire temperature range of the device. To activate this mode, the programming equipment must force VID (11.5V to 12.5V) on address pin A9. Two identifier bytes may then be sequenced from the device outputs by toggling address A0 from VIL to VIH. All addresses are don′t cares except A0 and A1 (see "Auto-select Codes"). The manufacturer and device codes may also be read via the command register, for instance, when the W39L040A is erased or programmed in a system without access to high voltage on the A9 pin. The command sequence is illustrated in "Auto-select Codes". -5- Publication Release Date: April 14, 2005 Revision A3 W39L040A Byte 0 (A0 = VIL) represents the manufacturer′s code (Winbond = DAH) and byte 1 (A0 = VIH) the device identifier code (W39L040A = D6hex). All identifiers for manufacturer and device will exhibit odd parity with DQ7 defined as the parity bit. In order to read the proper device codes when executing the Auto-select, A1 must be low state. 6.2 Data Protection The W39L040A is designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transitions. During power up the device automatically resets the internal state machine in the Read mode. Also, with its control register architecture, alteration of the memory contents only occurs after successful completion of specific multi-bus cycle command sequences. The device also incorporates several features to prevent inadvertent write cycles resulting from VDD power-up and power-down transitions or system noise. 6.2.1 Low VDD Inhibit To avoid initiation of a write cycle during VDD power-up and power-down, the W39L040A locks out when VDD < 2.0V (see DC Characteristics section for voltages). The write and read operations are inhibited when VDD is less than 2.0V typical. The W39L040A ignores all write and read operations until VDD > 2,0V. The user must ensure that the control pins are in the correct logic state when VDD > 2.0V to prevent unintentional writes. 6.2.2 Write Pulse "Glitch" Protection Noise pulses of less than 10 nS (typical) on #OE, #CE, or #WE will not initiate a write cycle. 6.2.3 Logical Inhibit Writing is inhibited by holding any one of #OE = VIL, #CE = VIH, or #WE = VIH. To initiate a write cycle #CE and #WE must be a logical zero while #OE is a logical one. 6.2.4 Power-up Write and Read Inhibit Power-up of the device with #WE = #CE = VIL and #OE = VIH will not accept commands on the rising edge of #WE except 5mS delay (see the power up timing in AC Characteristics). The internal state machine is automatically reset to the read mode on power-up. 6.3 Command Definitions Device operations are selected by writing specific address and data sequences into the command register. Writing incorrect address and data values or writing them in the improper sequence will reset the device to the read mode. "Command Definitions" defines the valid register command sequences. 6.3.1 Read Command The device will automatically power-up in the read state. In this case, a command sequence is not required to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures that no spurious alteration of the memory content occurs during the power transition. The device will automatically returns to read state after completing an Embedded Program or Embedded Erase algorithm. Refer to the AC Read Characteristics and Waveforms for the specific timing parameters. -6- W39L040A 6.3.2 Auto-select Command Flash memories are intended for use in applications where the local CPU can alter memory contents. As such, manufacture and device codes must be accessible while the device resides in the target system. PROM programmers typically access the signature codes by raising A9 to a high voltage. However, multiplexing high voltage onto the address lines is not generally a desirable system design practice. The device contains an auto-select command operation to supplement traditional PROM programming methodology. The operation is initiated by writing the auto-select command sequence into the command register. Following the command write, a read cycle from address XX00H retrieves the manufacture code of DAH. A read cycle from address XX01H returns the device code (W39L040A = D6hex). To terminate the operation, it is necessary to write the auto-select exit command sequence into the register. 6.3.3 Byte Program Command The device is programmed on a byte-by-byte basis. Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two "unlock" write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded program algorithm. Addresses are latched on the falling edge of #CE or #WE, whichever happens later and the data is latched on the rising edge of #CE or #WE, whichever happens first. The rising edge of #CE or #WE (whichever happens first) begins programming using the Embedded Program Algorithm. Upon executing the algorithm, the system is not required to provide further controls or timings. The device will automatically provide adequate internally generated program pulses and verify the programmed cell margin. The automatic programming operation is completed when the data on DQ7 (also used as #Data Polling) is equivalent to the data written to this bit at which time the device returns to the read mode and addresses are no longer latched (see "Hardware Sequence Flags"). Therefore, the device requires that a valid address to the device be supplied by the system at this particular instance of time for #Data Polling operations. #Data Polling must be performed at the memory location which is being programmed. Any commands written to the chip during the Embedded Program Algorithm will be ignored. If a hardware reset occurs during the programming operation, the data at that particular location will be corrupted. Programming is allowed in any sequence and across sector boundaries. Beware that a data "0" cannot be programmed back to a "1". Attempting to program 0 back to 1, the toggle bit will stop toggling. Only erase operations can convert "0"s to "1"s. Refer to the Programming Command Flow Chart using typical command strings and bus operations. 6.3.4 Chip Erase Command Chip erase is a six-bus-cycle operation. There are two "unlock" write cycles, followed by writing the "set-up" command. Two more "unlock" write cycles are asserted, followed by the chip erase command. Chip erase does not require the user to program the device prior to erase. Upon executing the Embedded Erase Algorithm command sequence the device will automatically erase and verify the entire memory for an all one data pattern. The erase is performed sequentially on each sectors at the Publication Release Date: April 14, 2005 Revision A3 -7- W39L040A same time (see "Feature"). The system is not required to provide any controls or timings during these operations. The automatic erase begins on the rising edge of the last #WE pulse in the command sequence and terminates when the data on DQ7 is "1" at which time the device returns to read the mode. Refer to the Erase Command Flow Chart using typical command strings and bus operations. 6.3.5 Sector Erase Command Sector erase is a six-bus-cycle operation. There are two "unlock" write cycles, followed by writing the "set-up" command. Two more "unlock" write cycles then follows by the sector erase command. The sector address (any address location within the desired sector) is latched on the falling edge of #WE, while the command (30H) is latched on the rising edge of #WE. Sector erase does not require the user to program the device prior to erase. When erasing a sector or sectors the remaining unselected sectors are not affected. The system is not required to provide any controls or timings during these operations. The automatic sector erase begins after the erase command is completed, right from the rising edge of the #WE pulse for the last sector erase command pulse and terminates when the data on DQ7, #Data Polling, is "1" at which time the device returns to the read mode. #Data Polling must be performed at an address within any of the sectors being erased. Refer to the Erase Command flow Chart using typical command strings and bus operations. 6.4 Write Operation Status 6.4.1 DQ7: #Data Polling The W39L040A device features #Data Polling as a method to indicate to the host that the embedded algorithms are in progress or completed. During the Embedded Program Algorithm, an attempt to read the device will produce the complement of the data last written to DQ7. Upon completion of the Embedded Program Algorithm, an attempt to read the device will produce the true data last written to DQ7. During the Embedded Erase Algorithm, an attempt to read the device will produce a "0" at the DQ7 output. Upon completion of the Embedded Erase Algorithm, an attempt to read the device will produce a "1" at the DQ7 output. For chip erase, the #Data Polling is valid after the rising edge of the sixth pulse in the six #WE write pulse sequences. For sector erase, the #Data Polling is valid after the last rising edge of the sector erase #WE pulse. #Data Polling must be performed at sector addresses within any of the sectors being erased. Otherwise, the status may not be valid. Just prior to the completion of Embedded Algorithm operations DQ7 may change asynchronously while the output enable (#OE) is asserted low. This means that the device is driving status information on DQ7 at one instant of time and then that byte′s valid data at the next instant of time. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the Embedded Algorithm operations and DQ7 has a valid data, the data outputs on DQ0 – DQ6 may be still invalid. The valid data on DQ0 − DQ7 will be read on the successive read attempts. The #Data Polling feature is only active during the Embedded Programming Algorithm, Embedded Erase Algorithm, or sector erase time-out (see "Command Definitions"). -8- W39L040A 6.4.2 DQ6: Toggle Bit The W39L040A also features the "Toggle Bit" as a method to indicate to the host system that the embedded algorithms are in progress or completed. During an Embedded Program or Erase Algorithm cycle, successive attempts to read (#OE toggling) data from the device at any address will result in DQ6 toggling between one and zero. Once the Embedded Program or Erase Algorithm cycle is completed, DQ6 will stop toggling and valid data will be read on the next successive attempt. During programming, the Toggle Bit is valid after the rising edge of the fourth #WE pulse in the four write pulse sequence. For chip erase, the Toggle Bit is valid after the rising edge of the sixth #WE pulse in the six write pulse sequence. For sector erase, the Toggle Bit is valid after the last rising edge of the sector erase #WE pulse. The Toggle Bit is active during the sector erase time-out. Either #CE or #OE toggling will cause DQ6 to toggle. 6.5 Table of Operating Modes 6.5.1 Device Bus Operations PIN (VID = 12 ±0.5V) MODE #CE Read Write Standby Write Inhibit #OE #WE VIL VIH X VIL X A0 A0 A0 X X X X VIL VIH A1 A1 A1 X X X X VIL VIL A9 A9 A9 X X X X VID VID DQ0 − DQ7 Dout Din High Z High Z/Dout High Z/Dout VIL VIL VIH X X VIH VIL X X VIH VIH VIH VIH Output Disable Auto select Manufacturers ID Auto select Device ID VIL VIL VIL VIH VIL VIL High Z Code Code 6.5.2 Auto-select Codes (High Voltage Method) DESCRIPTION #CE #OE #WE A9 THE OTHER ADDRESS DQ[7:0] (VID = 12 ±0.5V) Manufacturer ID: Winbond Device ID: W39L040A VIL VIL VIL VIL VIH VIH VID VID All Address = VIL A1 = VIH, All other = VIL DAhex D6hex -9- Publication Release Date: April 14, 2005 Revision A3 W39L040A 6.5.3 Sector Address Table A18 A17 A16 SECTOR SIZE (KBYTES) ADDRESS SECTOR SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 64 64 64 64 64 64 64 64 00000h − 0FFFFh 10000h − 1FFFFh 20000h − 2FFFFh 30000h − 3FFFFh 40000h − 4FFFFh 50000h − 5FFFFh 60000h − 6FFFFh 70000h − 7FFFFh Note: All sectors are 64K bytes in size. 6.5.4 Command Definitions NO. OF 1ST CYCLE 2ND CYCLE 3RD CYCLE 4TH CYCLE 5TH CYCLE 6TH CYCLE Cycles Addr. (1) Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data 1 6 6 4 3 3 1 (2) (2) COMMAND DESCRIPTION Read Chip Erase Sector Erase Byte Program Product ID Entry Product ID Exit Product ID Exit AIN 5555 5555 5555 5555 5555 XXXX DOUT AA AA AA AA AA F0 2AAA 2AAA 2AAA 2AAA 2AAA 55 55 55 55 55 5555 5555 5555 5555 5555 80 80 A0 90 F0 5555 5555 AIN AA AA DIN 2AAA 2AAA 55 55 5555 SA (3) 10 30 Notes: 1. Address Format: A14 − A0 (Hex); Data Format: DQ7 − DQ0 (Hex) 2. Either one of the two Product ID Exit commands can be used. 3. SA: Sector Address SA = 7XXXXh for Unique Sector7 SA = 6XXXXh for Unique Sector6 SA = 5XXXXh for Unique Sector5 SA = 4XXXXh for Unique Sector4 SA = 3XXXXh for Unique Sector3 SA = 2XXXXh for Unique Sector2 SA = 1XXXXh for Unique Sector1 SA = 0XXXXh for Unique Sector0 4. XX: Don't care - 10 - W39L040A 6.6 Embedded Programming Algorithm Start Write Program Command Sequence (see below) #Data Polling/ Toggle bit Pause T BP No Increment Address Last Address ? Yes Programming Completed Program Command Sequence (Address/Command): 5555H/AAH 2AAAH/55H 5555H/A0H Program Address/Program Data - 11 - Publication Release Date: April 14, 2005 Revision A3 W39L040A 6.7 Embedded Erase Algorithm Start Write Erase Command Sequence (see below) #Data Polling or Toggle Bit Successfully Completed Pause T EC /TSEC/TPEC Erasure Completed Chip Erase Command Sequence (Address/Command): 5555H/AAH Individual Sector Erase Command Sequence (Address/Command): 5555H/AAH 2AAAH/55H 2AAAH/55H 5555H/80H 5555H/80H 5555H/AAH 5555H/AAH 2AAAH/55H 2AAAH/55H 5555H/10H Sector Address/30H - 12 - W39L040A 6.8 Embedded #Data Polling Algorithm Start VA = Byte address for programming = Any of the sector addresses within the sector being erased during sector erase operation = Any of the device addresses being erased during chip erase operation Read Byte (DQ0 - DQ7) Address = VA No DQ7 = Data ? Yes Pass 6.9 Embedded Toggle Bit Algorithm Start Read Byte (DQ0 - DQ7) Address = Don't Care Yes DQ6 = Toggle ? No Pass - 13 - Publication Release Date: April 14, 2005 Revision A3 W39L040A 7. ELECTRICAL CHARACTERISTICS 7.1 Absolute Maximum Ratings PARAMETER RATING UNIT Operating Temperature Storage Temperature Power Supply Voltage to VSS Potential Voltage on Any Pin to Ground Potential except A9 Voltage on A9, #OE Pin to Ground Potential 0 to +70 -65 to +150 -0.5 to VDD+0.5 -0.5 to +4.0 -0.5 to +12.5 °C °C V V V Note: Exposure to conditions beyond those listed under Absolute maximum Ratings may adversely affect the life and reliability of the device. 7.2 DC Operating Characteristics (VDD = 3.0 ~ 3.6V for 70 nS or VDD = 2.7 ~ 3.6V for 90 nS, VSS = 0V, TA = 0 to 70° C) PARAMETER SYM. TEST CONDITIONS MIN. LIMITS TYP. MAX. UNIT Power Supply Read Current Power Supply Write Current Standby VDD Current Input Leakage Current Output Leakage Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage IDD1 IDD2 ISB ILI ILO VIL VIH VOL #CE = VIL, #OE = VIH, at f = 5 MHz #CE = VIL, #OE = VIH #CE = VDD ± 0.3V VIN = VSS to VDD, VDD = VDD max. VOUT = VSS to VDD, VDD = VDD max. IOL = 4.0 mA, VDD = VDD min. -0.5 0.7 x VDD 0.85 VDD VDD -0.4 7 15 0.2 - 12 30 5 ±1 ±1 0.8 VDD +0.3 0.45 - mA mA μA μA μA V V V V V VOH1 IOH = -2.0 mA, VDD = VDD min. VOH2 IOH = -100 μA, VDD = VDD min. 7.3 Pin Capacitance (VDD = 3.3V for 70 nS, or VDD = 3.0V for 90 nS, TA = 25° C, f = 1 MHz) PARAMETER SYMBOL CONDITIONS TYP. MAX. UNIT Input Capacitance Output Capacitance CIN COUT VIN = 0V VOUT = 0V 6 8.5 7.5 12 pF pF - 14 - W39L040A 7.4 AC Characteristics 7.4.1 AC Test Conditions PARAMETER CONDITIONS Input Pulse Levels Input Rise/Fall Time Input/Output Timing Level Output Load 0V to 3.0V