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W49F020Q-90B

W49F020Q-90B

  • 厂商:

    WINBOND(华邦)

  • 封装:

  • 描述:

    W49F020Q-90B - 256K X 8 CMOS FLASH MEMORY - Winbond

  • 数据手册
  • 价格&库存
W49F020Q-90B 数据手册
Preliminary W49F020 256K × 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F020 is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F020 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers. FEATURES • Single 5-volt operations: − 5-volt Read − 5-volt Erase − 5-volt Program • Low power consumption − Active current: 25 mA (typ.) − Standby current: 20 µ A (typ.) • Fast Program operation: − Byte-by-Byte programming: 50 µS (max.) Fast Erase operation: 100 mS (typ.) Fast Read access time: 70/90 nS Endurance: 1K/10K cycles (typ.) Twenty-year data retention Hardware data protection One 8K byte Boot Block with Lockout protection • • Automatic program and erase timing with internal VPP generation End of program or erase detection − Toggle bit − Data polling • • • • • • • • • • Latched address and data TTL compatible I/O JEDEC standard byte-wide pinouts Available packages: 32-pin DIP and 32-pin TSOP and 32-pin-PLCC -1- Publication Release Date: October 1999 Revision A1 Preliminary W49F020 PIN CONFIGURATIONS NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 VDD WE A17 A14 A13 A8 A9 A11 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 BLOCK DIAGRAM W49F020 V DD VSS CE OE WE OUTPUT BUFFER DQ0 . . DQ7 32-pin DIP 26 25 24 23 22 21 20 19 18 17 CONTROL 3FFFF A0 . . A17 MAIM MEMORY 248K BYTES BOOT BLOCK 8K BYTES 02000 01FFF 00000 DECODER AAA V/ A 1 1 1 N DW 1 2 56 CDE 7 4 3 2 1 32 31 30 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 DDGDDDD QQNQQQQ 12D3456 29 28 27 A14 A13 A8 A9 A11 OE A10 CE DQ7 32-pin PLCC 26 25 24 23 22 21 PIN DESCRIPTION SYMBOL A0− A17 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 PIN NAME Address Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enable Power Supply Ground No Connection A11 A9 A8 A13 A14 A17 WE VDD NC A16 A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 GND DQ2 DQ1 DQ0 A0 A1 A2 A3 DQ0−DQ7 CE OE WE 32-pin TSOP VDD GND NC -2- Preliminary W49F020 FUNCTIONAL DESCRIPTION Read Mode The read operation of the W49F020 is controlled by CE and OE , both of which have to be low for the host to obtain data from the outputs. CE is used for device selection. When CE is high, the chip is de-selected and only standby power will be consumed. OE is the output control and is used to gate data from the output pins. The data bus is in high impedance state when either CE or OE is high. Refer to the timing waveforms for further details. Boot Block Operation There is an 8K-byte boot block in this device, which can be used to store boot code. The boot block locates in the first 8K bytes of the memory with the address range from 0000(hex) to 1FFF(hex). For the specific code, please see Command Codes for Boot Block Lockout Enable. When the boot block is enabled, data for the designated block cannot be erased or programmed (programming lockout); other memory locations can be changed by the regular programming method. When the boot block programming lockout feature is activated, the chip erase function cannot erase the boot block any longer. In order to detect whether the boot block feature is set on the 8K-bytes block or not, users can perform software command sequence to check it. First, enter the product identification mode (see Command Codes for Identification/Boot Block Lockout Detection for specific code), and then read from address "0002 hex". If the output data is "1," the boot block programming lockout feature is activated; if the output data is "0," the lockout feature is inactivated and the block can be erased/programmed. To return to normal operation, perform a three-byte command sequence (or an alternate single-word command) to exit the identification mode. For the specific code, see Command Codes for Identification/Boot Block Lockout Detection. Chip Erase Operation The chip-erase mode can be initiated by a six-word command sequence. After the command loading cycle, the device enters the internal chip erase mode, which is automatically timed and will be completed in a fast 100 mS (typical). The host system is not required to provide any control or timing during this operation. If the boot block programming lockout is activated, only the data in the main memory blocks will be erased to FF(hex), and the data in the boot block will not be erased (remains same as before the chip erase operation). The entire memory array will be erased to FF hex by the chip erase operation if the boot block programming lockout feature is not activated. Once the boot block lockout feature is activated, the chip erase function erase the main memory block but not the boot block. The device will automatically return to normal read mode after the erase operation completed. Data polling and/or Toggle Bits can be used to detect end of erase cycle. Program Operation The W49F020 is programmed on a byte-by-byte basis. Program operation can only change logical data "1" to logical data "0." The erase operation (changed entire data in main memory blocks and/or boot block from "0" to "1") is needed before programming. The program operation is initiated by a 4-word command cycle (see Command Codes for Byte Programming). The device will internally enter the program operation immediately after the byte-program command is entered. The internal program timer will automatically time-out (50 µS max. - -3- Publication Release Date: October 1999 Revision A1 Preliminary W49F020 TBP) when completing programming and return to normal read mode. Data polling and/or Toggle Bits can be used to detect end of program cycle. Hardware Data Protection The integrity of the data stored in the W49F020 is also hardware protected in the following ways: (1) Noise/Glitch Protection: A WE pulse with less than 15 nS in duration will not initiate a write cycle. (2) VDD Power Up/Down Detection: The programming operation is inhibited when VDD is less than 2.5V typical. (3) Write Inhibit Mode: Forcing OE low, CE high, or WE high will inhibit the write operation. This prevents inadvertent writes during power-up or power-down periods. (4) VDD power-on delay: When VDD has reached its sense level, the device will automatically time-out 5 mS before any write (erase/program) operation. Data Polling (DQ7)- Write Status Detection The W49F020 features a data polling function which used to indicate the end of a program or erase cycle. When the W49F020 is in the internal program or erase cycle, any attemption to read DQ7 of the last word loaded will receive the complement of the true data. Once the program or erase cycle is completed, DQ7 will show the true data. Note that DQ7 will show logical "0" during the erase cycle, and become logical "1" or true data when the erase cycle has been completed. Toggle Bit (DQ6)- Write Status Detection In addition to data polling, the W49F020 provides another method for determining the end of a program cycle. During the internal program or erase cycle, any consecutive attempts to read DQ6 will produce alternating 0's and 1's. When the program or erase cycle is completed, this toggling between 0's and 1's will stop. The device is then ready for the next operation. Product Identification The product ID operation outputs the manufacturer code and device code. Programming equipment automatically matches the device with its proper erase and programming algorithms. The manufacturer and device codes can be accessed by software or hardware operation. In software access mode, a three-word (or JEDEC 3-word) command sequence can be used to access the product ID. A read from address 0000H outputs the manufacturer code DA(hex); and a read from address 0001H outputs the device code 8C(hex) for W49F020. The product ID operation can be terminated by a three-word command sequence or an alternated one-word command sequence (see Command Definition table). In the hardware access mode, access to the product ID will be activated by forcing CE and OE low, W E high, and raising A9 to 12 volts. -4- Preliminary W49F020 TABLE OF OPERATING MODES Operating Mode Selection (VHH = 12V ± 5%) MODE Read Write Standby Write Inhibit Output Disable Product ID CE VIL VIL VIH X X OE VIL VIH X VIL X WE VIH VIL X X VIH PINS ADDRESS AIN AIN X X X X A0 = VIL; A1−A17 = VIL; A9 = VHH A0 = VIL; A1−A17 = VIL; A9 = VHH Dout Din High Z High Z/DOUT High Z/DOUT DQ. X VIL VIL VIH VIL VIL X VIH VIH High Z Manufacturer Code DA (Hex) Device Code 8C (Hex) TABLE OF COMMAND DEFINITION COMMAND DESCRIPTION NO. OF 1ST CYCLE 2ND CYCLE 3RD CYCLE 4TH CYCLE 5TH CYCLE 6TH CYCLE Cycles Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Read Chip Erase Byte Program Boot Block Lockout Product ID Entry Product ID Exit Product ID Exit Notes: (1) (1) 1 6 4 6 3 3 1 A IN DOUT 2AAA 55 2AAA 55 2AAA 55 2AAA 55 2AAA 55 5555 80 5555 A0 5555 80 5555 90 5555 F0 5555 AA AIN D IN 2AAA 55 5555 40 2AAA 55 5555 10 5555 AA 5555 AA 5555 AA 5555 AA 5555 AA XXXX F0 5555 AA 1. Address Format: A14−A0 (Hex); Data Format: DQ7-DQ0 (Hex) 2. Either one of the two Product ID Exit commands can be used. -5- Publication Release Date: October 1999 Revision A1 Preliminary W49F020 Command Codes for Byte Program WORD SEQUENCE 0 Write 1 Write 2 Write 3 Write ADDRESS 5555H 2AAAH 5555H Programmed-Address DATA AAH 55H A0H Programmed-Data Byte Program Flow Chart Byte Program Command Flow Load data AA to address 5555 Load data 55 to address 2AAA Load data A0 to address 5555 Load data Din to programmedaddress Pause 50 µ S Exit Notes for software program code: Data Format: DQ7−DQ0 (Hex Address Format: A14−A0 (Hex) -6- Preliminary W49F020 Command Codes for Chip Erase BYTE SEQUENCE 1 Write 2 Write 3 Write 4 Write 5 Write 6 Write ADDRESS 5555H 2AAAH 5555H 5555H 2AAAH 5555H DATA AAH 55H 80H AAH 55H 10H Chip Erase Acquisition Flow Load data AA to address 5555 Load data 55 to address 2AAA Load data 80 to address 5555 Load data AA to address 5555 Load data 55 to address 2AAA Load data 10 to address 5555 Pause 1 Sec. Exit Notes for chip erase: Data Format: DQ7−DQ0 (Hex) Address Format: A14−A0 (Hex) -7- Publication Release Date: October 1999 Revision A1 Preliminary W49F020 Command Codes for Product Identification and Boot Block Lockout Detection BYTE SEQUENCE ALTERNATE PRODUCT (6) IDENTIFICATION/BOOT BLOCK LOCKOUT DETECTION ENTRY ADDRESS 1 Write 2 Write 3 Write 5555 2AAA 5555 Pause 10 µS DATA AA 55 90 SOFTWARE PRODUCT IDENTIFICATION/BOOT BLOCK LOCKOUT DETECTION EXIT (7) ADDRESS 5555H 2AAAH 5555H Pause 10 µS DATA AAH 55H F0H Software Product Identification and Boot Block Lockout Detection Acquisition Flow Product Identification Entry (1) Load data AA to address 5555 Product Identification and Boot Block Lockout Detection Mode (3) Product Identification Exit(7) Load data AA to address 5555 (2) Load data 55 to address 2AAA Read address = 00000 data = DA Load data 55 to address 2AAA Load data 90 to address 5555 Read address = 00001 data =8C (2) Load data F0 to address 5555 Pause 10 µS (4) Read address = 00002 data in DQ0 = "1"/"0" Pause 10 µS (5) Normal Mode Notes for software product identification/boot block lockout detection: (1) Data Format: DQ7−DQ0 (Hex); Address Format: A14−A0 (Hex) (2) A1−A17 = VIL; manufacture code is read for A0 = VIL; device code is read for A0 = VIH. (3) The device does not remain in identification and boot block lockout detection mode if power down. (4) If the output data in DQ0= " 1," the boot block programming lockout feature is activated; if the output data in DQ0= " 0," the lockout feature is inactivated and the block can be programmed. (5) The device returns to standard operation mode. (6) Optional 1-word cycle (write F0 hex at XXXX address) can be used to exit the product identification/boot block lockout detection. -8- Preliminary W49F020 Command Codes for Boot Block Lockout Enable BYTE SEQUENCE BOOT BLOCK LOCKOUT FEATURE SET ADDRESS 1 Write 2 Write 3 Write 4 Write 5 Write 6 Write 5555H 2AAAH 5555H 5555H 2AAAH 5555H Pause 1 Sec. DATA AAH 55H 80H AAH 55H 40H Boot Block Lockout Enable Acquisition Flow Boot Block Lockout Feature Set Flow Load data AA to address 5555 Load data 55 to address 2AAA Load data 80 to address 5555 Load data AA to address 5555 Load data 55 to address 2AAA Load data 40 to address 5555 Pause 1 Sec. Exit Notes for boot block lockout enable: Data Format: DQ7−DQ0 (Hex) Address Format: A14−A0 (Hex) -9- Publication Release Date: October 1999 Revision A1 Preliminary W49F020 DC CHARACTERISTICS Absolute Maximum Ratings PARAMETER Power Supply Voltage to Vss Potential Operating Temperature Storage Temperature D.C. Voltage on Any Pin to Ground Potential except OE Transient Voltage (
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