W949D2CBJX6G

W949D6CB / W949D2CB 512Mb Mobile LPDDR TABLE OF CONTENTS 1. GENERAL DESCRIPTION ................................................................................................. 4 2. FEATURES ......................................................................................................................... 4 3. PIN CONFIGURATION ....................................................................................................... 5 3.1 Ball Assignment: LPDDR X16 .................................................................................................. 5 3.2 Ball Assignment: LPDDR X32 .................................................................................................. 5 4. PIN DESCRIPTION ............................................................................................................. 6 4.1 Signal Descriptions................................................................................................................... 6 4.2 Addressing Table ..................................................................................................................... 7 5. BLOCK DIAGRAM.............................................................................................................. 8 5.1 Block Diagram .......................................................................................................................... 8 5.2 Simplified State Diagram .......................................................................................................... 9 6. FUNCTION DESCRIPTION ...............................................................................................10 6.1 Initialization ............................................................................................................................ 10 6.1.1 Initialization Flow Diagram ............................................................................................................. 11 6.1.2 Initialization Waveform Sequence .................................................................................................. 12 6.2 Register Definition .................................................................................................................. 12 6.2.1 Mode Register Set Operation ......................................................................................................... 12 6.2.2 Mode Register Definition ................................................................................................................ 13 6.2.3. Burst Length .................................................................................................................................. 13 6.3 Burst Definition ....................................................................................................................... 14 6.4 Burst Type .............................................................................................................................. 15 6.5 Read Latency ......................................................................................................................... 15 6.6 Extended Mode Register Description ..................................................................................... 15 6.6.1 Extended Mode Register Definition ................................................................................................ 16 6.7 Status Register Read ............................................................................................................. 16 6.7.1 SRR Register (A[n:0] = 0) .............................................................................................................. 17 6.7.2 Status Register Read Timing Diagram ........................................................................................... 18 6.8 Partial Array Self Refresh ....................................................................................................... 19 6.9 Automatic Temperature Compensated Self Refresh ............................................................... 19 6.10 Output Drive Strength ........................................................................................................... 19 6.11 Commands ........................................................................................................................... 19 6.11.1 Basic Timing Parameters for Commands .................................................................................... 19 6.11.2 Truth Table - Commands ............................................................................................................. 20 6.11.3 Truth Table - DM Operations ....................................................................................................... 21 6.11.4 Truth Table - CKE ........................................................................................................................ 21 6.11.5 Truth Table - Current State BANKn - Command to BANKn......................................................... 22 6.11.6 Truth Table - Current State BANKn, Command to BANKn .......................................................... 23 7. OPERATION ......................................................................................................................24 7.1. Deselect ................................................................................................................................ 24 7.2. No Operation ......................................................................................................................... 24 7.2.1 NOP Command .............................................................................................................................. 25 -1- Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 7.3 Mode Register Set.................................................................................................................. 25 7.3.1 Mode Register Set Command ........................................................................................................ 25 7.3.2 Mode Register Set Command Timing ............................................................................................ 26 7.4. Active .................................................................................................................................... 26 7.4.1 Active Command ............................................................................................................................ 26 7.4.2 Bank Activation Command Cycle ................................................................................................... 27 7.5. Read ..................................................................................................................................... 27 7.5.1 Read Command ............................................................................................................................. 28 7.5.2 Basic Read Timing Parameters ..................................................................................................... 28 7.5.3 Read Burst Showing CAS Latency ................................................................................................ 29 7.5.4 Read to Read ................................................................................................................................. 29 7.5.5 Consecutive Read Bursts ............................................................................................................... 30 7.5.6 Non-Consecutive Read Bursts ....................................................................................................... 30 7.5.7 Random Read Bursts ..................................................................................................................... 31 7.5.8 Read Burst Terminate .................................................................................................................... 31 7.5.9 Read to Write ................................................................................................................................. 32 7.5.10 Read to Pre-charge ...................................................................................................................... 32 7.5.11 Burst Terminate of Read .............................................................................................................. 33 7.6 Write....................................................................................................................................... 33 7.6.1 Write Command ............................................................................................................................. 34 7.6.2 Basic W rite Timing Parameters ...................................................................................................... 34 7.6.3 Write Burst (min. and max. tDQSS) ............................................................................................... 35 7.6.4 Write to Write .................................................................................................................................. 35 7.6.5 Concatenated Write Bursts ............................................................................................................ 36 7.6.6 Non-Consecutive Write Bursts ....................................................................................................... 36 7.6.7 Random Write Cycles..................................................................................................................... 37 7.6.8 Write to Read ................................................................................................................................. 37 7.6.9 Non-Interrupting Write to Read ...................................................................................................... 37 7.6.10 Interrupting Write to Read ............................................................................................................ 38 7.6.11 Write to Precharge ....................................................................................................................... 38 7.6.12 Non-Interrupting Write to Precharge ............................................................................................ 38 7.6.13 Interrupting Write to Precharge .................................................................................................... 39 7.7 Precharge............................................................................................................................... 39 7.7.1 Precharge Command ..................................................................................................................... 40 7.8 Auto Precharge ...................................................................................................................... 40 7.9 Refresh Requirements............................................................................................................ 40 7.10 Auto Refresh ........................................................................................................................ 40 7.10.1 Auto Refresh Command ............................................................................................................... 41 7.11 Self Refresh ......................................................................................................................... 41 7.11.1 Self Refresh Command ................................................................................................................ 42 7.11.2 Auto Refresh Cycles Back -to-Back .............................................................................................. 42 7.11.3 Self Refresh Entry and Exit .......................................................................................................... 43 7.12 Power Down ......................................................................................................................... 43 7.12.1 Power-Down Entry and Exit ......................................................................................................... 43 7.13 Deep Power Down ............................................................................................................... 44 Publication Release Date: Sep, 21, 2011 Revision A01-007 -2- W949D6CB / W949D2CB 512Mb Mobile LPDDR 7.13.1 Deep Power-Down Entry and Exit ................................................................................................ 44 7.14 Clock Stop ............................................................................................................................ 45 7.14.1 Clock Stop Mode Entry and Exit .................................................................................................. 45 8. ELECTRICAL CHARACTERISTIC ....................................................................................46 8.1 Absolute Maximum Ratings .................................................................................................... 46 8.2 Input/Output Capacitance ....................................................................................................... 46 8.3 Electrical Characteristics and AC/DC Operating Conditions ................................................... 47 8.3.1 Electrical Characteristics and AC/DC Operating Conditions .......................................................... 47 8.4 IDD Specification Parameters and Test Conditions ................................................................ 48 8.4.1 IDD Specification Parameters and Test Conditions ....................................................................... 48 8.5 AC Timings............................................................................................................................. 51 8.5.1 CAS Latency Definition (With CL=3) .............................................................................................. 54 8.5.2 Output Slew Rate Characteristics .................................................................................................. 55 8.5.3 AC Overshoot/Undershoot Specification........................................................................................ 55 8.5.4 AC Overshoot and Undershoot Definition ...................................................................................... 55 9. PACKAGE DIMENSIONS ..................................................................................................56 9.1: LPDDR X 16.......................................................................................................................... 56 9.2: LPDDR X 32.......................................................................................................................... 57 10. ORDERING INFORMATION ............................................................................................58 11. REVISION HISTORY .......................................................................................................59 -3- Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 1. GENERAL DESCRIPTION W 949D6CB / W 949D2CB is a high-speed Low Power double data rate synchronous dynamic random access memory (LPDDR SDRAM), An access to the LPDDR SDRAM is burst oriented. Consecutive memory location in one page can be accessed at a burst length of 2, 4, 8 and 16 when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the LPDDR SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the pre -charging time. By setting programmable Mode Registers, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. The device supports low power functions such as Partial Array Self Refresh (PASR) and Automatic Te mperature Compensated Self Refresh (ATCSR). 2. FEATURES VDD = 1.7~1.95V VDDQ = 1.7~1.95V; Data width: x16 / x32 Clock rate: 200MHz(-5),166MHz (-6) ,133MHz (-75) Partial Array Self-Refresh(PASR) Auto Temperature Compensated Self-Refresh(ATCSR) Power Down Mode Deep Power Down Mode (DPD Mode) Programmable output buffer driver strength Four internal banks for concurrent operation Data mask (DM) for write data Clock Stop capability during idle periods Auto Pre-charge option for each burst access Double data rate for data output Differential clock inputs (CK and CK ) Bidirectional, data strobe (DQS) CAS Latency: 2 and 3 Burst Length: 2, 4, 8 and 16 Burst Type: Sequential or Interleave 64 ms Refresh period Interface: LVCMOS compatible Support package: 60 balls BGA (x16) 90 balls BGA (x32) Operating Temperature Range : Extended (-25°C ~ +85°C) Industrial (-40°C ~ +85°C) -4- Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 3. PIN CONFIGURATION 3.1 Ball Assignment: LPDDR X16 60 BALL VFBGA 1 A B C D E F G H J K VSS VDDQ VSSQ VDDQ VSSQ VSS CKE A9 A6 VSS 2 DQ15 DQ13 DQ11 DQ9 UDQS UDM CK A11 A7 A4 3 VSSQ DQ14 DQ12 DQ10 DQ8 NC CK 4 5 6 7 VDDQ DQ1 DQ3 DQ5 DQ7 NC WE 8 DQ0 DQ2 DQ4 DQ6 LDQS LDM 9 VDD VSSQ VDDQ VSSQ VDDQ VDD CAS BA0 A0 A3 RAS BA1 A1 VDD A12 A8 A5 CS A10/AP A2 (Top View) Pin Configuration 3.2 Ball Assignment: LPDDR X32 90 BALL VFBGA 1 A B C D E F G H J K L M N P R VSS VDDQ VSSQ VDDQ VSSQ VDD CKE A9 A6 A4 VSSQ VDDQ VSSQ VDDQ VSS 2 DQ31 DQ29 DQ27 DQ25 DQS3 DM3 CK A11 A7 DM1 DQS1 DQ9 DQ11 DQ13 DQ15 3 VSSQ DQ30 DQ28 DQ26 DQ24 NC CK 4 5 6 7 VDDQ DQ17 DQ19 DQ21 DQ23 NC WE 8 DQ16 DQ18 DQ20 DQ22 DQS2 DM2 9 VDD VSSQ VDDQ VSSQ VDDQ VSS CAS BA0 A0 DM0 DQS0 DQ6 DQ4 DQ2 DQ0 RAS BA1 A1 A3 VDDQ VSSQ VDDQ VSSQ VDD A12 A8 A5 DQ8 DQ10 DQ12 DQ14 VSSQ CS A10/AP A2 DQ7 DQ5 DQ3 DQ1 VDDQ (Top View) Pin Configuration -5- Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 4. PIN DESCRIPTION 4.1 Signal Descriptions SIGNAL NAME TYPE FUNCTION DESCRIPTION Provide the row address for ACTIVE commands, and the column address and AUTO PRECHARGE bit for READ/WRITE commands, to select one location out of the memory array in the respective bank. The address inputs also provide the opcode during a MODE REGISTER SET command. A10 is used for Auto Pre-charge Select. Define to which bank an ACTIVE, READ, WRITE or PRECHARGE command is being applied. Data bus: Input / Output. A [n : 0] Input Address BA0, BA1 DQ0~DQ15 (×16) DQ0~DQ31 (×32) Input I/O Bank Select Data Input/ Output CS Input Chip Select CS enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CS is registered HIGH. CS provides for external bank selection on systems with multiple banks. CS is considered part of the command code. RAS CAS WE Input Input Input Row Address Strobe RAS , CAS and WE (along with CS ) define the command being entered. Column Address Referred to RAS Strobe W rite Enable Referred to RAS Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH along with that input data during a WRITE access. DM is sampled on both edges of DQS. Although DM pins are input-only, the DM loading matches the DQ and DQS loading. x16: LDM: DQ0 - DQ7, UDM: DQ8 – DQ15 x32: DM0: DQ0 - DQ7, DM1: DQ8 – DQ15, DM2: DQ16 – DQ23, DM3: DQ24 – DQ31 CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of UDM / LDM(x16); Input DM0 to DM3 (x32) Input Mask CK / CK Input Clock Inputs CK and negative edge of CK .Input and output data is referenced to the crossing of CK and CK (both directions of crossing). Internal clock signals are derived from CK/ CK . -6- Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR SIGNAL NAME TYPE FUNCTION DESCRIPTION CKE HIGH activates, and CKE LOW deactivates internal clock signals, and device input buffers and output drivers. Taking CKE LOW provides PRECHARGE, POWER DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER DOWN (row ACTIVE in any bank). CKE is synchronous for all functions except for SELF REFRESH EXIT, which is achieved asynchronously. Input buffers, excluding CK, CK and CKE, are disabled during power down and self refresh mode which are contrived for low standby power consumption. Output with read data, input with write data. Edge-aligned with read data, centered with write data. Used to capture write data. x16: LDQS: DQ0~DQ7; UDQS: DQ8~DQ15. x32: DQS0: DQ0~DQ7; DQS1: DQ8~DQ15; DQS2: DQ16~DQ23; DQS3: DQ24~DQ31. Power supply for input buffers and internal circuit. Ground for input buffers and internal circuit. Power supply separated from VDD, used for output drivers to improve noise. Ground for output drivers. Non connection pin. CKE Input Clock Enable LDQS, UDQS (x16); DQS0~DQS3 (x32) VDD VSS VDDQ VSSQ NC I/O Data Strobe Supply Supply Supply Supply - Power Ground Power for I/O Buffer Ground for I/O Buffer Non Connect 4.2 Addressing Table ITEM Number of banks Bank address pins Auto precharge pin Row addresses X16 Column addresses tREFI(µs) Row addresses x32 Column addresses tREFI(µs) 512 Mb 4 BA0,BA1 A10/AP A0-A12 A0-A9 7.8 A0-A12 A0-A8 7.8 -7- Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 5. BLOCK DIAGRAM 5.1 Block Diagram CK CK CLOCK BUFFER CKE CS RAS CAS CONTROL SIGNAL GENERATOR COMMAND DECODER COLUMN DECODER WE COLUMN DECODER R O W R O W D E C O R D E R A10 CELL ARRAY BANK #0 A0 ADDRESS An BA0 BA1 BUFFER MODE REGISTER D E C O R D E R CELL ARRAY BANK #1 SENSE AMPLIFIER SENSE AMPLIFIER DMn DATA CONTROL CIRCUIT REFRESH COUNTER COLUMN COUNTER DQ BUFFER DQ0 – DQ15 (x16) DQ0 – DQ31 (x32) UDM / LDM (x16) DMn (x32) UDQS / LDQS (x16) DQSn (x32) COLUMN DECODER R O W D E C O R D E R R O W COLUMN DECODER CELL ARRAY BANK #2 D E C O R D E R CELL ARRAY BANK #3 SENSE AMPLIFIER SENSE AMPLIFIER -8- Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 5.2 Simplified State Diagram Power applied Power On DPDSX Deep Power Down Precharge All Bank DPDS Self Refresh REFS SRR Read Read REFSX SRR MRS EMRS MRS Idle All banks precharged REFA Auto Refresh CKEL CKEH Active Power Down CKEH ACT Precharge Power Down CKEL Row Active WRITE WRITE WRITE READA READ READ Burst Stop BST READ WRITE WRITEA READ READA READA WRITE A PRE PRE PRE READ A PRE Precharge PREALL Automatic Sequence Command Sequence ACT = Active MRS = Ext . Mode Reg . Set REFSX = Exit Self Refresh BST = Burst Terminate MRS = Mode Register Set READ = Read w/o Auto Precharge CKEL= Enter Power - Down PRE = Precharge READA = Read with Auto Precharge CKEH = Exit Power - Down PREALL = Precharge All Bank WRITE = Write w/o Auto Precharge DPDS = Enter Deep Power Down REFA = Auto Refresh WRITEA = Write with Auto Precharge DPDSX = Exit Deep Power Down REFS = Enter Self Refresh SRR = Status Register Read Note: Use caution with this diagram . It is indented to provide a floorplan of the possible state transitions and commands to control them , not all details . In particular situations involving more than one bank are not captured in full detall . -9- Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 6. FUNCTION DESCRIPTION 6.1 Initialization LPDDR SDRAM must be powered up and initialized in a predefined manner. Operations procedures other than those specified may result in undefined operation. If there is any interruption to the device power, the initialization routine should be followed. The steps to be followed for device initialization are listed below. The Mode Register and Extended Mode Register do not have default values. If they are not programmed during the initialization sequence, it may lead to unspecified operation. The clock stop feature is n ot available until the device has been properly initialized from Step 1 through 11.  Step 1: Provide power, the device core power (VDD) and the device I/O power (VDDQ) must be brought up simultaneously to prevent device latch-up.Although not required, it is recommended that VDD and VDDQ are from the same power source. Also Assert and hold Clock Enable (CKE) to a LVCMOS logic high level Step 2: Once the system has established consistent device power and CKE is driven high, it is safe to apply stable clock. Step 3: There must be at least 200μs of valid clocks before any command may be given to the DRAM. During this time NOP or DESELECT commands must be issued on the command bus. Step 4: Issue a PRECHARGE ALL command. Step 5: Provide NOPs or DESELECT commands for at least tRP time. Step 6: Issue an AUTO REFRESH command followed by NOPs or DESELECT command for at least tRFC time. Issue the second AUTO REFRESH command followed by NOPs or DESELECT command for at least tRFC time. Note as part of the initialization sequence there must be two Auto Refresh commands issued. The typical flow is to issue them at Step 6, but they may also be issued between steps 10 and 11. Step 7: Using the MRS command, program the base mode register. Set the desired operation modes. Step 8: Provide NOPs or DESELECT commands for at least tMRD time. Step 9: Using the MRS command, program the extended mode register for the desired operating modes. Note the order of the base and extended mode register programmed is not important. Step 10: Provide NOP or DESELECT commands for at least tMRD time. Step 11: The DRAM has been properly initialized and is ready for any valid command.           - 10 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 6.1.1 Initialization Flow Diagram 1 VDD and VDDQ Ramp: CKE must be held high 2 Apply stable clocks 3 Wait at least 200us with NOP or DESELECT on command bus 4 PRECHARGE ALL 5 Assert NOP or DESELCT for tRP time 6 Issue two AUTO REFRESH commands each followed by NOP or DESELECT commands for tRFC time 7 Configure Mode Register 8 Assert NOP or DESELECT for tMRD time 9 Configure Extended Mode Register 10 Assert NOP or DESELECT for tMRD time 11 LPDDR SDRAM is ready for any valid command - 11 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 6.1.2 Initialization Waveform Sequence VDD VDDQ 200us CK CK tCK tRP tRFC tRFC tMRD tMRD CKE Command NOP PRE ARF ARF MRS MRS ACT Address CODE CODE RA A10 All Banks CODE CODE RA BA0,BA1 BA0=L BA1=L BA0=L BA1=H BA DM DQ,DQS (High-Z) VDD/VDDQ powered up Clock stable Load Mode Reg. Load Ext.Mode Reg.. = Don't Care 6.2 Register Definition 6.2.1 Mode Register Set Operation The Mode Register is used to define the specific mode of operation of the LPDDR SDRAM. This definition includes the definition of a burst length, a burst type, a CAS latency as shown in the following figure. The Mode Register is programmed via the MODE REGISTER SET command (with BA0=0 and BA1=0) and will retain the stored information until it is reprogrammed, the device goes into Deep Power Down mode, or the device loses power. Mode Register bits A0-A2 specify the burst length, A3 the type of burst (sequential or interleave), A4 -A6 the CAS latency. A logic 0 should be programmed to all the undefined addresses bits to ensure future compatibility. The Mode Register must be loaded when all banks are idle and no bur sts are in progress, and the controller must wait the specified time tMRD before initiating any subsequent operation. Violating either of these requirements will result in unspecified operation. Reserved states should not be used, as unknown operation or incompatibility with future versions may result. - 12 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 6.2.2 Mode Register Definition BA1 BA0 Ai..A7 (see Note 1) A6 A5 A4 A3 A2 A1 A0 Address Bus 0 0 0 (see Note 2) CAS Latency BT Burst Length Mode Register A6 0 0 0 0 1 1 1 1 A5 0 0 1 1 0 0 1 1 A4 0 1 0 1 0 1 0 1 CAS Latency Reserved Reserved 2 3 Reserved Reserved Reserved Reserved A3 0 1 Burst Type Sequential Interleave A2 0 0 0 0 1 1 1 1 A1 0 0 1 1 0 0 1 1 A0 0 1 0 1 0 1 0 1 Burst Length Reserved 2 4 8 16 Reserved Reserved Reserved NOTE: 1.MSB depends on LPDDR SDRAM density. 2.Alogic 0 should be programmed to all unused / undefined address bits to future compatibility. 6.2.3. Burst Length Read and write accesses to the LPDDR SDRAM are burst oriented, with the burst length and burst type being programmable. The burst length determines the maximum number of column locations that can be accessed for a given READ or W RITE command. Burst lengths of 2, 4, or 8 locations are available for both the sequential and the interleaved burst types. W hen a READ or WRITE command is issued, a block of columns equal to the burst length is effectively selected. All accesses for that burst take place within the bloc k, meaning that the burst will wrap within the block if a boundary is reached. The block is uniquely selected by A 1−An when the burst length is set to two, by A2 −An when the burst length is set to 4, by A3−An when the burst length is set to 8 (where An is the most significant column address bit for a given configuration). The remaining (least significant) address bit( s) is (are) used to select the starting location within the block. The programmed burst length applies to both read and write bursts. - 13 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 6.3 Burst Definition BURST LENGTH STARTING COLUMN ADDRESS A3 2 0 4 0 1 1 0 0 0 8 0 1 1 1 1 0 0 0 0 0 0 0 16 0 1 1 1 1 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 A2 A1 A0 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 ORDER OF ACCESSES WITHIN A BURST (HEXADECIMAL NOTATION) SEQUENTIAL 0–1 1–0 0–1–2–3 1–2–3–0 2–3–0–1 3–0–1–2 0–1–2–3–4–5–6–7 1–2–3–4–5–6–7–0 2–3–4–5–6–7–0–1 3–4–5–6–7–0–1–2 4–5–6–7–0–1–2–3 5–6–7–0–1–2–3–4 6–7–0–1–2–3–4–5 7–0–1–2–3–4–5–6 INTERLEAVED 0–1 1–0 0–1–2–3 1–0–3–2 2–3–0–1 3–2–1–0 0–1–2–3–4–5–6–7 1–0–3–2–5–4–7–6 2–3–0–1–6–7–4–5 3–2–1–0–7–6–5–4 4–5–6–7–0–1–2–3 5–4–7–6–1–0–3–2 6–7–4–5–2–3–0–1 7–6–5–4–3–2–1–0 0-1-2-3-4-5-6-7-8-9-A-B-C-D-E-F 0-1-2-3-4-5-6-7-8-9-A-B-C-D-E-F 1-2-3-4-5-6-7-8-9-A-B-C-D-E-F-0 1-0-3-2-5-4-7-6-9-8-B-A-D-C-F-E 2-3-4-5-6-7-8-9-A-B-C-D-E-F-0-1 2-3-0-1-6-7-4-5-A-B-8-9-E-F-C-D 3-4-5-6-7-8-9-A-B-C-D-E-F-0-1-2 3-2-1-0-7-6-5-4-B-A-9-8-F-E-D-C 4-5-6-7-8-9-A-B-C-D-E-F-0-1-2-3 4-5-6-7-0-1-2-3-C-D-E-F-8-9-A-B 5-6-7-8-9-A-B-C-D-E-F-0-1-2-3-4 5-4-7-6-1-0-3-2-D-C-F-E-9-8-B-A 6-7-8-9-A-B-C-D-E-F-0-1-2-3-4-5 6-7-4-5-2-3-0-1-E-F-C-D-A-B-8-9 7-8-9-A-B-C-D-E-F-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0-F-E-D-C-B-A-9-8 8-9-A-B-C-D-E-F-0-1-2-3-4-5-6-7 8-9-A-B-C-D-E-F-0-1-2-3-4-5-6-7 9-A-B-C-D-E-F-0-1-2-3-4-5-6-7-8 9-8-B-A-D-C-F-E-1-0-3-2-5-4-7-6 A-B-C-D-E-F-0-1-2-3-4-5-6-7-8-9 A-B-8-9-E-F-C-D-2-3-0-1-6-7-4-5 B-C-D-E-F-0-1-2-3-4-5-6-7-8-9-A B-A-9-8-F-E-D-C-3-2-1-0-7-6-5-4 C-D-E-F-0-1-2-3-4-5-6-7-8-9-A-B C-D-E-F-8-9-A-B-4-5-6-7-0-1-2-3 D-E-F-0-1-2-3-4-5-6-7-8-9-A-B-C D-C-F-E-9-8-B-A-5-4-7-6-1-0-3-2 E-F-0-1-2-3-4-5-6-7-8-9-A-B-C-D E-F-C-D-A-B-8-9-6-7-4-5-2-3-0-1 F-0-1-2-3-4-5-6-7-8-9-A-B-C-D-E F-E-D-C-B-A-9-8-7-6-5-4-3-2-1-0 - 14 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR Notes: 1. For a burst length of two, A1-An selects the two data element block; A0 selects the first access within the block. 2. For a burst length of four, A2-An selects the four data element block; A0-A1 selects the first access within the block. 3. For a burst length of eight, A3-An selects the eight data element block; A0-A2 selects the first access within the block. 4. For the burst length of sixteen, A4-An selects the sixteen data element block; A0-A3 selects the first access within the block. 5. W henever a boundary of the block is reached within a given sequence, the following access wraps within the block. When a READ or WRITE command is issued, a block of columns equal to the burst length is effectively selected. All accesses for that burst take place within the block, meaning t hat the burst will wrap within the block if a boundary is reached. The block is uniquely selected by A1-An when the burst length is set to two, by A2-An when the burst length is set to 4, by A3An when the burst length is set to 8 and A4 -An when the burst length is set to 16(where An is the most significant column address bit for a given configuration). The remaining (least significant) address bit(s) is (are) used to select the starting location within the block. The programmed burst length applies to both read and write bursts. 6.4 Burst Type Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the burst type and is selected via bit A3. The ordering of accesses within a burst is determined by the burst length, the burst type and the starting column address, as shown in the previous table. 6.5 Read Latency The READ latency is the delay between the registration of a READ command and the availability of the first piece of output data. The latency should be set to 2 or 3 clocks. If a READ command is registered at a clock edge n and the latency is 3 clocks, the first data element will be valid at n + 2 tCK + tAC. If a READ command is registered at a clock edge n and the latency is 2 clocks, the first data element will be valid at n + tCK + tAC. 6.6 Extended Mode Register Description The Extended Mode Register controls functions beyond those controlled by the Mode Register; these additional functions include output drive strength selection and Partial Array Self Refresh (PASR). PASR is effective in Self Refresh mode only. The Extended Mode Register is programmed via the MODE REGISTER SET command (with BA1=1 and BA0=0) and will retain the stored information until it is reprogrammed, the device is put in Deep Power Down mode, or the device loses power. The Extended Mode Register must be loaded when all banks are idle and no bursts are in progress, and the controller must wait the specified time tMRD before initiating any subsequent operation. Violating either of these requirements will result in unspecified operation. Address bits A0-A2 specify PASR, A5-A7 the Driver Strength. A logic 0 should be programmed to all the undefined addresses bits to ensure future compatibility. Reserved states should not be used, as unknown operation or incompatibility with future versions may result. - 15 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 6.6.1 Extended Mode Register Definition BA1 BA0 An....A8 (1) A7 ~ A5 A4 A3 A2 A1 A0 Address Bus 1 0 0 ( 2) DS Reserved PASR Extended Mode Reg. A7 0 0 0 0 1 A6 0 0 1 1 0 A5 0 1 0 1 0 Drive Strength Full Strength Driver Half Strength Drive Quarter Strength Driver Octant Strength Driver Three-Quarters Strength Driver A2 0 0 0 0 1 1 1 1 A1 0 0 1 1 0 0 1 1 A0 0 1 0 1 0 1 0 1 PASR All banks 1/2 array (BA1=0) 1/4 array (BA1=BA0=0) Reserved Reserved Reserved Reserved Reserved NOTES: 1.MSB depends on mobile DDR SDRAM density. 2.A logic 0 should be programmed to all unused / undefined bits to ensure future compatibility. 6.7 Status Register Read Status Register Read (SRR) is an optional feature in JEDEC, and it is implemented in this device. With SRR, a method is defined to read registers from the device. The encoding for an SRR command is the same as a MRS with BA[1:0]=”01”. The address pins (A[n:0]) encode which register is to be read. Currently only one register is defined at A[n:0]=0. The sequence to perform an SRR command is as follows:        All reads/writes must be completed All banks must be closed MRS with BA=01 is issued (SRR) W ait tSRR Read issued to any bank/page CAS latency cycles later the device returns the registers data as it would a normal read The next command to the device can be issued tSRC after the Read command was issued. The burst length for the SRR read is always fixed to length 2. - 16 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 6.7.1 SRR Register (A[n:0] = 0) X 16 15 13 12 11 10 8 7 4 3 0 Rising Edge of DQ Bus Reserved(0) Density DT DW Refresh Rate Revision Manufacturer Identification Identification SRR Register 0 DQ15 DQ14 DQ13 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 Density 128 256 512 1024 2048 Reserved Reserved 64 DQ3 DQ2 DQ1 DQ0 Manufacturer Winbond 1 0 0 0 DQ12 Device Type 0 1 LPDDR Reserved DQ10 DQ11 Device Width 16 bits 32 bits 1 1 1 1 0 0 0 DQ9 1 1 0 0 1 1 0 DQ8 1 0 1 0 1 0 x Refresh Rate Reserved 0.25 Reserved 1 Reserved Reserved Reserved DQ7:4 Revision ID (See Note 1) 0 1 Note 1 : The manufacture’s revision number starts at ‘0000’ and increments by ‘0001’ each time a change in the manufacturer’s specification(AC timings, or feature set), IBIS (pull up or pull down characteristics), or process occurs. Note 2 : The refresh rate mulitiplier is based on the menory’s temperature sensor. Note 3 : Required average periodic refresh interval = tREFI * multiplier - 17 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 6.7.2 Status Register Read Timing Diagram CK CK Command BA1,BA0 An~A0 DQS DQ tRP CMD NOP MRS 01 0 tSRR NOP READ NOP NOP tSRC NOP CMD CL=3 DQ:Reg out =Don’t Care PCHA, or PCH Notes : 1.SRR can only be issued after power-up sequence is complete. 2.SRR can only be issued with all banks precharged. 3.SRR CL is unchanged from value in the mode register. 4.SRR BL is fixed at 2. 5.tSRR = 2 (min). 6.tSRC = CL + 1; (min time between read to next valid command) 7.No commands other than NOP and DES are allowed between the SRR and the READ. - 18 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 6.8 Partial Array Self Refresh W ith partial array self refresh (PASR), the self refresh may be restricted to a variable portion of the total array. The whole array (default), 1/2 array, or 1/4 array could be selected. Data outside the defined area will be lost. Address bits A0 to A2 are used to set PASR. 6.9 Automatic Temperature Compensated Self Refresh The device has an Automatic Temperature Compensated Self Refresh feature. It automatically adjusts the refresh rate based on the device temperature without any register update needed. To maintain backward compatibility, this device which have Automatic TCSR, ignore (don‟t care) the inputs to address bits A3 and A4 during EMRS programming. 6.10 Output Drive Strength The drive strength could be set to full, half or three-quarter strength via address bits A5 and A6. The half drive strength option is intended for lighter loads or point-to-point environments. 6.11 Commands All commands (address and control signals) are registered on the positive edge of clock (crossing of CK going high and CK going low). 6.11.1 Basic Timing Parameters for Commands tCK CK CK tCH tIS tIH tCL Input Valid Valid Valid NOTE: Input = A0–An, BA0, BA1, CKE, CS, RAS, CAS, WE; : Don't Care - 19 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 6.11.2 Truth Table - Commands NAME (FUNCTION) DESELECT (NOP) NO OPERATION (NOP) ACTIVE (Select Bank and activate row) READ (Select bank and column and start read burst) READ with AP (Read Burst with Auto Precharge) W RITE (Select bank and column and start write burst) W RITE with AP (Write Burst with Auto Precharge) BURST TERMINATE or enter DEEP POWER DOWN PRECHARGE (Deactivate Row in selected bank) PRECHARGE ALL (Deactivate rows in all banks) AUTO REFRESH or enter SELF REFRESH MODE REGISTER SET CS H L L L L L L L L L L L RAS CAS X H L H H H H H L L L L X H H L L L L H H H L L WE BA X X Valid Valid Valid Valid Valid X Valid X X Valid A10/AP ADDR NOTES X X Row L H L H X L H X Op-code X X Row Col Col Col Col X X X X 3 4, 5 6 6 7, 8, 9 10 3 2 2 X H H H H L L L L L H L Notes: 1. All states and sequences not shown are illegal or reserved. 2. DESELECT and NOP are functionally interchangeable. 3. Auto precharge is non-persistent. A10 High enables Auto precharge, while A10 Low disables Auto precharge. 4. Burst Terminate applies to only Read bursts with Autoprecharge disabled. This command is undefined and should not be used for Read with Auto precharge enabled, and for W rite bursts. 5. This command is BURST TERMINATE if CKE is High and DEEP POWER DOWN entry if CKE is Low. 6. If A10 is low, bank address determines which bank is to be precharged. If A10 is high, all banks are precharged and BA0~BA1 are don‟t care. 7. This command is AUTO REFRESH if CKE is High and SELF REFRESH if CKE is low. 8. All address inputs and I/O are „don‟t care‟ except for CKE. Internal refresh counters control bank and row addressing. 9. All banks must be precharged before issuing an AUTO-REFRESH or SELF REFRESH command. 10. BA0 and BA1 value select between MRS and EMRS. 11. CKE is HIGH for all commands shown except SELF REFRESH and DEEP POWER-DOWN. - 20 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 6.11.3 Truth Table - DM Operations FUNCTION W rite Enable W rite Inhibit DM L H DQ Valid X NOTES 1 1 Notes: 1. Used to mask write data, provided coincident with the corresponding data. 6.11.4 Truth Table - CKE CKEn-1 L L L L L L H H H H H CKEn L L L H H H L L L L H CURRENT STATE Power Down Self Refresh Deep Power Down Power Down Self Refresh Deep Power Down All Banks Idle Bank(s) Active All Banks Idle All Banks Idle COMMANDn X X X NOP or DESELECT NOP or DESELECT NOP or DESELECT NOP or DESELECT NOP or DESELECT AUTO REFRESH BURST TERMINATE ACTIONn Maintain Power Down Maintain Self Refresh Maintain Deep Power Down Exit Power Down Exit Self Refresh Exit Deep Power Down Precharge Power Down Entry Active Power Down Entry Self Refresh Entry Enter Deep Power Down 5, 6, 9 5, 7, 10 5, 8 5 5 NOTES See the other Truth Tables Notes: 1. CKEn is the logic state of CKE at clock edge n; CKEn-1 was the state of CKE at the previous clock edge. 2. Current state is the state of LPDDR SDRAM immediately prior to clock edge n. 3. COMMANDn is the command registered at clock edge n, and ACTIONn is the result of COMMANDn. 4. All states and sequences not shown are illegal or reserved. 5. DESELECT and NOP are functionally interchangeable. 6. Power Down exit time (tXP) should elapse before a command other than NOP or DESELECT is issued. 7. SELF REFRESH exit time (tXSR) should elapse before a command other than NOP or DESELECT is issued. 8. The Deep Power-Down exit procedure must be followed as discussed in the Deep Power -Down section of the Functional Description. 9. The clock must toggle at least once during the tXP period. 10. The clock must toggle at least once during the tXSR time. - 21 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 6.11.5 Truth Table - Current State BANKn - Command to BANKn CURRENT STATE Any CS H L L L L L RAS CAS WE X H L L L H H L H H L H H H L X H H L L L L H L L H H L L H X COMMAND DESELECT ACTION NOP or Continue previous operation NOP or Continue previous operation Select and activate row Auto refresh Mode register set Select column & start read burst Select column & start write burst Deactivate row in bank (or banks) Select column & start new read burst Select column & start write burst Truncate read burst, start precharge Burst terminate Select column & start read burst Select column & start new write burst Truncate write burst & start precharge NOTES H No Operation H ACTIVE H AUTO REFRESH L L L L L L MRS W RITE PRECHARGE W RITE PRECHARGE BURST TERMINATE W RITE PRECHARGE H READ Idle 10 10 Row Active L L L L L L L 4 5, 6 5, 6, 13 H READ Read (Auto precharge Disabled) 11 5, 6, 12 5, 6 12 H READ L L W rite (Auto precharge Disabled) L L Notes: 1. The table applies when both CKEn-1 and CKEn are HIGH, and after tXSR or tXP has been met if the previous state was Self Refresh or Power Down. 2. DESELECT and NOP are functionally interchangeable. 3. All states and sequences not shown are illegal or reserved. 4. This command may or may not be bank specific. If all banks are being precharged, they must be in a valid state for precharging. 5. A command other than NOP should not be issued to the same bank while a READ or WRITE burst with Auto Precharge is enabled. 6. The new Read or Write command could be Auto Prechrge enabled or Auto Precharge disabled. 7. Current State Definitions: Idle: The bank has been precharged, and tRP has been me t. Row Active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register accesses are in progress. Read: A READ burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated . Write: A W RITE burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated. 8. The following states must not be interrupted by a command issued to the same bank. DESEDECT or NOP commands or allowable commands to the other bank should be issued on any clock edge occurring during these states. Allowable commands to the other bank are determined by its current state and this table, and according to next table. Precharging: Starts with the registration of a PRECHARGE command and ends when tRP is met. Once tRP is met, the bank will be in the idle state. Row Activating: Starts with registration of an ACTIVE command and ends when tRCD is met. Once tRCD is met, the bank will be in the „row active‟ state. Read with AP Enabled: Starts with the registration of the READ command with Auto Precharge enabled and ends when tRP has been met. Once tRP has been met, the bank will be in the idle state. Write with AP Enabled: Starts with registration of a WRITE command with Auto Precharge enabled and ends when tRP has been met. Once tRP is met, the bank will be in the idle state. 9. The following states must not be interrupted by any executable command; DESEDECT or NOP commands must be applied to each positive clock edge during these states. Refreshing: Starts with registration of an AUTO REFRESH command and ends when tRFC is met. Once tRFC is met, the LPDDR SDRAM will be in an „all banks idle‟ state. - 22 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR Accessing Mode Register: Starts with registration of a MODE REGISTER SET command and en ds when tMRD has been met. Once tMRD is met, the LPDDR SDRAM will be in an „all banks idle‟ state. Precharging All: Starts with the registration of a PRECHARGE ALL command and ends when tRP is met. Once tRP is met, the bank will be in the idle state. Not bank-specific; requires that all banks are idle and no bursts are in progress. Not bank-specific. BURST TERMINATE affects the most recent READ burst, regardless of bank. Requires appropriate DM masking. A W RITE command may be applied after the completion of the READ burst; otherwise, a BURST TERMINATE must be used to end the READ prior to asserting a WRITE command. 10. 11. 12. 13. 6.11.6 Truth Table - Current State BANKn, Command to BANKn CURRENT STATE Any Idle Row Activating, Active, or Precharging CS H L X L L L L L RAS X H X L H H L L H H L L H H L L H H L L H H L CAS X H X H L L H H L L H H L L H H L L H H L L H WE COMMAND DESELECT NOP ANY ACTIVE READ W RITE PRECHARGE ACTIVE READ W RITE PRECHARGE ACTIVE READ W RITE PRECHARGE ACTIVE READ W RITE PRECHARGE ACTIVE READ W RITE PRECHARGE ACTION NOP or Continue previous Operation NOP or Continue previous Operation Any command allowed to bank m Select and activate row Select column & start read burst Select column & start write burst Precharge Select and activate row Select column & start new read burst Select column & start write burst Precharge Select and activate row Select column & start read burst Select column & start new write burst Precharge Select and activate row Select column & start new read burst Select column & start write burst Precharge Select and activate row Select column & start read burst Select column & start new write burst Precharge NOTES X H X H H L L H H L L H H L L H H L L H H L L 8 8 Read with Auto Precharge disabled L L L L 8 8,10 W rite with Auto Precharge disabled L L L L L L L L L L L 8, 9 8 Read with Auto Precharge 5, 8 5, 8, 10 W rite with Auto Precharge 5, 8 5, 8 - 23 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR Notes: 1. The table applies when both CKEn-1 and CKEn are HIGH, and after tXSR or tXP has been met if the previous state was Self Refresh or Power Down. 2. DESELECT and NOP are functionally interchangeable. 3. All states and sequences not shown are illegal or reserved. 4. Current State Definitions: Idle: The bank has been precharged, and tRP has been met. Row Active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register accesses are in progress. Read: A READ burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated. Write: A Write burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated. 5. Read with AP enabled and Write with AP enabled: The read with Auto Precharge enabled or Write with Auto Precharge enabled states can be broken into two parts: the access period and the precharge period. For Read with AP, the precharge period is defined as if the same burst was executed with Auto Precharge disabled and then followed with the earliest possible PRECHARGE command that still accesses all the data in t he burst. For Write with Auto precharge, the precharge period begins when tWR ends, with tWR measured as if Auto Precharge was disabled. The access period starts with registration of the command and ends where the precharge period (or tRP) begins. During t he precharge period, of the Read with Auto Precharge enabled or Write with Auto Precharge enabled states, ACTIVE, PRECHARGE, READ, and WRITE commands to the other bank may be applied; during the access period, only ACTIVE and PRECHARGE commands to the other banks may be applied. In either case, all other related limitations apply (e.g. contention between READ data and WRITE data must be avoided). 6. AUTO REFRESH, SELF REFRESH, and MODE REGISTER SET commands may only be issued when all bank are idle. 7. A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented by the current state only. 8. READs or WRITEs listed in the Command column include READs and WRITEs with A uto Precharge enabled and READs and WRITEs with Auto Precharge disabled. 9. Requires appropriate DM masking. 10. A W RITE command may be applied after the completion of data output, otherwise a BURST TERMINATE command must be issued to end the READ prior to asserting a WRITE command. 7. OPERATION 7.1. Deselect The DESELECT function ( CS = high) prevents new commands from being executed by the LPDDR SDRAM. The LPDDR SDRAM is effectively deselected. Operations already in progress are not affected. 7.2. No Operation The NO OPERATION (NOP) command is used to perform a NOP to a LPDDR SDRAM that is selected ( CS =Low). This prevents unwanted commands from being registered during idle or wait states. Operations already in progress are not affected. - 24 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 7.2.1 NOP Command CK CK CKE CS RAS CAS WE A 0 -A n BA0,BA1 = Don't Care (High) 7.3 Mode Register Set The Mode Register and the Extended Mode Register are loaded via the address inputs. The MODE REGISTER SET command can only be issued when all banks are idle and no bursts are in progress, and a subsequent executable command cannot be issued until tMRD is met. 7.3.1 Mode Register Set Command CK CK CKE CS RAS CAS WE A 0 -A n BA0,BA1 Code Code = Don't Care (High) - 25 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 7.3.2 Mode Register Set Command Timing CK CK Command Address MRS Code NOP Valid Valid : Don't Care NOTE:Code=Mode Register / Extended Mode Register selection (BA0,BA1)and op-code (A0-An) tMRD 7.4. Active Before any READ or WRITE commands can be issued to a bank in the LPDDR SDRAM, a row in that bank must be opened. This is accomplished by the ACTIVE command: BA0 and BA1 select the bank, and the address inputs select the row to be activated. More than one bank can be active at any time. Once a row is open, a READ or WRITE command could be issued to that row, subject to the t RCD specification. A subsequent ACTIVE command to another row in the same bank can only be issued after the previous row has been closed. The minimum time interval between two successive ACTIVE commands on the same bank is defined by tRC. 7.4.1 Active Command CK CK CKE CS RAS CAS WE A 0 -A n BA0,BA1 RA BA = Don't Care BA=BANK Address, RA=Row Address (High) - 26 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR A subsequent ACTIVE command to another bank can be issued while the first bank is being acce ssed, which results in a reduction of total row-access overhead. The minimum time interval between two successive ACTIVE commands on different banks is defined by tRRD. The row remains active until a PRECHARGE command (or READ or WRITE command with Auto P recharge) is issued to the bank. A PRECHARGE (or READ with Auto Precharge or Write with Auto Precharge) command must be issued before opening a different row in the same bank. 7.4.2 Bank Activation Command Cycle CK CK Command A 0 -A n BA0,BA1 ACT Row BA x NOP ACT Row BA y NOP NOP RD/WR Col BA y NOP tRRD tRCD = Don't Care 7.5. Read The READ command is used to initiate a burst read access to an active row, with a burst length as set in the Mode Register. BA0 and BA1 select the bank, and the address inputs select the starting column location. The value of A10 determines whether or not Auto Pre-charge is used. If Auto Pre-charge is selected, the row being accessed will be pre-charged at the end of the read burst; if Auto Pre-charge is not selected, the row will remain open for subsequent accesses. - 27 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 7.5.1 Read Command CK CK CKE CS RAS CAS WE A 0 -A n A10 BA0,BA1 CA Enable AP AP Disable AP BA = Don't Care BA=BANK Address CA=Coulmn Address AP=Auto Precharge (High) The basic Read timing parameters for DQs are shown in following figure; they apply to all Read operations. 7.5.2 Basic Read Timing Parameters tCK CK CK tCK tCH tDQSCK tCL tDQSCK tRPST DQS tACmax tRPRE tDQSQmax tAC tHZ DO n DO n+1 DO n+2 DO n+3 DQ tLZ tQH tACmin tDQSCK tRPRE tAC DQ DO n DO n+1 DO n+2 tQH tRPST tHZ DO n+3 tDQSCK tDQSQmax DQS tLZ tQH tQH = Don,t Care 1)DO n=Data Out from column n 2)All DQ are vaild tAC after the CK edge. All DQ are valid tDQSQ after the DQS edge, regardless of tAC - 28 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR During Read bursts, DQS is driven by the LPDDR SDRAM along with the output data. The initial Low state of the DQS is known as the read preamble; the Low state coincident with last data -out element is known as the read postamble. The first data-out element is edge aligned with the first rising edge of DQS a nd the successive data-out elements are edge aligned to successive edges of DQS. This is shown in following figure with a CAS latency of 2 and 3. Upon completion of a read burst, assuming no other READ command has been initiated, the DQs will go to High -Z. 7.5.3 Read Burst Showing CAS Latency CK CK Command Address READ BA Col n CL=2 DQS DQ DO n CL=3 DQS DQ DO n NOP NOP NOP NOP NOP = Don't Care 1)DO n=Data Out from column n 2)BA,Col n =Bank A,Column n 3)Burst Length=4;3 subsequent elements of Data Out appear inthe programmed order following DO n 4)Shown with nominal tAC, tDQSCK and tDQSQ 7.5.4 Read to Read Data from a read burst may be concatenated or truncated by a subsequent READ command. The first data from the new burst follows either the last element of a completed b urst or the last desired element of a longer burst that is being truncated. The new READ command should be issued X cycles after the first READ command, where X equals the number of desired data-out element pairs (pairs are required by the 2n-prefetch architecture). This is shown in following figure. - 29 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 7.5.5 Consecutive Read Bursts CK CK Command Address READ BA,Coln CL=2 DQS DQ DO n CL=3 DQS DQ DO n DO b DO b NOP READ BA,Colb NOP NOP NOP = Don't Care 1) DO n (or b)=Data Out from column n (or column b) 2) Burst Length=4,8 or 16 (if 4, the bursts are concatenated; if 8 or 16, the second burst interrupts the first) 3) Read bursts are to an active row in the bank 4) Shown with nominal tAC, tDQSCK and tDQSQ 7.5.6 Non-Consecutive Read Bursts A READ command can be initiated on any clock cycle following a previous READ command. Non -consecutive Reads are shown in following figure. CK CK Command Address READ BA,Col n CL=2 DQS DQ DO n CL=3 DQS DQ DO n DO b NOP NOP READ BA,Col b NOP NOP = Don't Care 1) DO n (or b) =Data Out from column n (or column b) 2) BA,Col n (b) =Bank A,Column n (b) 3) Burst Length=4; 3 subsequent elements of Data Out appear in the programmed order following DO n (b) 4) Shown with nominal tAC, tDQSCK and tDQSQ - 30 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 7.5.7 Random Read Bursts Full-speed random read accesses within a page or pages can b e performed as shown in following figure. CK CK Command Address READ BA,Col n READ BA,Col x CL=2 DQS DQ DO n CL=3 DQS DQ DO n DO nI DO x DO xI DO b DO bI DO nI DO x DO xI DO b DO bI DO g DO gI READ BA,Col b READ BA,Col g NOP NOP 1) DO n ,etc. = Data Out from column n, etc. nI, xI, etc. = Data Out elements, according to the programmed burst order 2) BA, Col n = Bank A, Column n 3) Burst Length=2,4,8 or 16 in cases shown (if burst of 4,8 or 16, the burst is interrupted) 4) Reads are to active rows in any banks = Don't Care 7.5.8 Read Burst Terminate Data from any READ burst may be truncated with a BURST TERMINATE command, as shown in figure. The BURST TERMINATE latency is equal to the read (CAS) latency, i.e., the BURST TERMINATE command should be issued X cycles after the READ command where X equals the desired data -out element pairs. CK CK Command Address READ BA,Col n CL=2 DQS DQ CL=3 DQS DQ 1) DO n = Data Out from column n 2) BA,Col n = Bank A, Column n 3) Cases shown are bursts of 4,8 or 16 terminated after 2 data elements. 4) Shown with nominal tAC, tDQSCK and tDQSQ = Don't Care BST NOP NOP NOP NOP - 31 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 7.5.9 Read to Write Data from READ burst must be completed or truncated before a subsequent W RITE command can be issued. If truncation is necessary, the BURST TERMINATE command must be used, as shown in following figure for the case of nominal tDQSS CK CK Command Address READ BA,Col n CL=2 DQS DQ DO n BST NOP WRITE BA,Col b NOP NOP tDQSS DM Command Address READ BA,Col n BST NOP NOP WRITE BA,Col b NOP CL=3 DQS DQ DO n DM = Don't Care 1) DO n = Data Out from column n; DI b= Data In to column b 2) Burst length = 4, 8 or 16 in the cases shown; If the burst length is 2, the BST command can be omitted 3) Shown with nominal tAC, tDQSCK and tDQSQ 7.5.10 Read to Pre-charge A Read burst may be followed by or truncated with a PRECHARGE command to the same bank (provided Auto Pre charge was not activated). The PRECHARGE command should be issued X cycles after the READ command, where X equal the number of desired data-out element pairs. This is shown in following figure. Following the PRECHARGE command, a subsequent command to the same bank cannot be issued until t RP is met. Note that part of the row pre-charge time is hidden during the access of the last data -out elements. In the case of a Read being executed to completion, a PRECHARGE command issued at the optimum time (as described above) provides the same operation that would result from Read burst with Auto Pre -charge enabled. The disadvantage of the PRECHARGE command is that it requires that the command and address buses be available at the appropriate time to issue the command. The advantage of the PRECHARGE command is that it can be used to truncate bursts. - 32 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR CK CK Command Address READ BA,Col n CL=2 DQS DQ DO n CL=3 DQS DQ DO n NOP PRE Bank (a or all) NOP NOP NOP BA,Row tRP = Don't Care 1) DO n=Data Out from column n 2) Cases shown are either uninterrupted of 4, or interrupted bursts of 8 or 16 3) Shown with nominal tAC,tDQSCK and tDQSQ 4) Precharge may be applied at (BL/2) tCK after the READ command. 5) Note that Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks. 6) The ACTIVE command may be applied if tRC has been met. 7.5.11 Burst Terminate of Read The BURST TERMINATE command is used to truncate read bursts (with Auto Pre-charge disabled). The most recently registered READ command prior to the BURST TERMINATE command will be truncated. Note that the BURST TERMINATE command is not bank specific. This command should not be used to terminate write bursts. CK CK CKE CS RAS CAS WE A0-An BA0,BA1 = Don't Care (High) 7.6 W rite The WRITE command is used to initiate a burst write access to an active row, with a burst length as set in the Mode Register. BA0 and BA1 select the bank, and the address inputs select the starting column location. The value of A10 determines whether or not Auto Pre-charge is used. If Auto Pre-charge is selected, the row being accessed will be pre-charged at the end of the write burst; if Auto Pre-charge is not selected, the row will remain open for subsequent accesses. - 33 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 7.6.1 Write Command CK CK CKE CS RAS CAS WE A 0 -A n A10 BA0,BA1 CA Enable AP AP Disable AP BA = Don't Care BA=BANK Address CA=Coulmn Address AP=Auto Precharge (High) 7.6.2 Basic Write Timing Parameters Basic Write timing parameters for DQs are shown in figure below; they apply to all Write operations. Input data appearing on the data bus, is written to the memory array subject to the DM input logic level a ppearing coincident with the data. If a given DM signal is registered Low, the corresponding data will be written to the memory; if the DM signal is registered High, the corresponding data inputs will be ignored, and a write will not be executed to that byte / column location. tCK CK CK Case 1: tDQSS = min tDQSS DQS tWPRES DQ, DM Case 2: tDQSS = max tWPRE tDS tDH tDQSL tDQSH tCH tCL tDSH tDSH tWPST DI n tDQSS tDQSH tWPRE tDH tDSS tDSS tWPST DQS tWPRES DQ, DM tDS tDQSL DI n = Don't Care 1) DI n=Data In for column n 2) 3 subsequent elements of Data In are applied in the programmed order following DI n. 3) tDQSS: each rising edge of DQS must fall within the +/-25% window of the corresponding positive clock edge. - 34 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 7.6.3 Write Burst (min. and max. tDQSS) During Write bursts, the first valid data-in element will be registered on the first rising edge of DQS following the W RITE command, and the subsequent data elements will be registered on successive edges of DQS. The Low state of DQS between the WRITE command and the first rising edge is called the write preamble, and the Low state on DQS following the last data-in element is called the write post-amble. The time between the WRITE command and the first corresponding rising edge of DQS (t DQSS) is specified with a relatively wide range - from 75% to 125% of a clock cycle. Following figure shows the two extremes of tDQSS for a burst of 4, upon completion of a burst, assuming no other commands have been initiated, the DQs will remain high -Z and any additional input data will be ignored. CK CK Command Address WRITE BA,Col b NOP NOP NOP NOP NOP tDQSSmin DQS DQ DM tDQSSmax DQS DQ DM 1) DI b = Data In to column b. 2) 3 subsequent elements of Data In are applied i nthe programmed order following DI b. 3) A non-interrupted burst of 4 is shown. 4) A10 is LOW with the WRITE command (Auto Precharge is disabled) = Don't Care 7.6.4 Write to Write Data for any WRITE burst may be concate nated with or truncated with a subsequent WRITE command. In either case, a continuous flow of input data, can be maintained. The new WRITE command can be issued on any positive edge of the clock following the previous WRITE command. The first data-in element from the new burst is applied after either the last element of a completed burst or the last desired data element of a longer burst which is being truncated. The new WRITE command should be issued X cycles after the first WRITE command, where X equals the number of desired data-in element pairs. - 35 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 7.6.5 Concatenated Write Bursts An example of concatenated write bursts is shown in figure below. CK CK Command Address WRITE BA,Col b NOP WRITE BA,Col n NOP NOP NOP tDQSSmin DQS DQ DI b DI n DM tDQSSmax DQS DQ DI b DI n DM 1) DI b (n)= Data in to column b (column n) 2)3 subsequent elements of Data In are applied in the programmed order following DI b. 3 subsequent elements of Data In are applied in the programmed order following DI n. 3) Non-interrupted bursts of 4 are shown. 4) Each WRITE command may be to any active bank = Don't Care 7.6.6 Non-Consecutive Write Bursts An example of non-consecutive write bursts is shown in figure below. CK CK Command Address WRITE BA,Col b NOP NOP BA,Col n WRITE BA,Col n NOP NOP tDQSSmax DQS DQ DM 1) Dl b (n)= Data in to column b (or column n) = Don't Care 2) 3 subsequent elements of Data In are applied in the programmed order following DI b. 3 subsequent elements of Data In are applied in the programmed order following DI n. 3) Non-interrupted bursts of 4 are shown. 4) Each WRITE command may be to any active bank and may be to the same or different devices. - 36 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 7.6.7 Random Write Cycles Full-speed random write accesses within a page or pages can be performed as shown in figure below. CK CK Command Address WRITE BA,Col b WRITE BA,Col x WRITE BA BA,Col n WRITE BA,Col a WRITE BA,Col g NOP tDQSSmax DQS DQ Di b Di b’ Di x Di x’ Di n Di n’ Di a Di a’ DM = Don't Care 1) Dl b etc.= Data in to column b, etc.; b’, etc.= the next Data In following Dl b, etc. according to the programmed burst order 2) Programmed burst length = 2, 4, 8 or 16 in cases shown. If burst of 4,8 or 16, burst would be truncated 3) Each WRITE command may be to any active bank and may be to the same or different devices. 7.6.8 Write to Read Data for any Write burst may be followed by a subsequent READ command. 7.6.9 Non-Interrupting Write to Read To follow a Write without truncating the write burst, tWTR should be met as shown in the figure below. CK CK Command Address DQS DQ DM 1) Dl b = Data in to column b = Don't Care 3 subsequent elements of Data In are applied in the programmed order following DI b. 2) A non-interrupted burst of 4 is shown. 3) tWTR is referenced from the positive clock edge after the last Data In pair. 4) A10 is LOW with the WRITE command (Auto Precharge is disabled) 5) The READ and WRITE commands are to the same device but not necessarily to the same bank. DI b WRITE BA,Col b NOP NOP NOP READ BA,Col n NOP NOP tDQSSmax tWTR CL=3 - 37 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 7.6.10 Interrupting Write to Read Data for any Write burst may be truncated by a subsequent READ command as shown in the figure below. Note that the only data-in pairs that are registered prior to the tWTR period are written to the internal array, and any subsequent data-in must be masked with DM. CK CK Command Address WRITE BA,Col b NOP NOP BA,Col n READ BA,Col n tWTR CL=3 NOP NOP NOP tDQSSmax DQS DQ DI b DO n DM 1) Dl b = Data in to column b. DO n=Data out from column n. 2) An interrupted burst of 4 is shown, 2 data elements are written. 3 subsequent elements of Data In are applied in the programmed order following DI b. 3) tWTR is referenced from the positive clock edge after the last Data In pair. 4)A10 is LOW with the WRITE command (Auto Precharge is disabled) 5) The READ and WRITE commands are to the same device but not necessarily to the same bank. = Don't Care 7.6.11 Write to Precharge Data for any WRITE burst may be followed by a subsequent PRECHARGE command to the same bank (provided Auto Precharge was not activated). To follow a WRITE without truncating the WRITE burst, t WR should be met as shown in the figure below. 7.6.12 Non-Interrupting Write to Precharge CK CK Command Address WRITE BA,Col b tDQSSmax DQS DQ DI b NOP NOP BA,Col n tWR NOP NOP PRE BA a (or all) DM 1) Dl b = Data in to column b 3 subsequent elements of Data In are applied in the programmed order following DI b. 2) A non-interrupted burst of 4 is shown. 3) tWR is referenced from the positive clock edge after the last Data In pair. 4) A10 is LOW with the WRITE command (Auto Precharge is disabled) = Don't Care - 38 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 7.6.13 Interrupting Write to Precharge Data for any WRITE burst may be truncated by a subsequent PRECHARGE command as shown in figure below. Note that only data-in pairs that are registered prior to the tWR period are written to the internal array, and any subsequent data-in should be masked with DM, as shown in figure. Following the PRECHARGE command, a subsequent command to the same bank cannot be issued until t RP is met. CK CK Command Address WRITE BA,Col b NOP NOP BA,Col n NOP PRE BA a(or all) NOP tDQSSmax DQS DQ DI b tWR *2 DM *1 *1 *1 *1 = Don't Care 1) Dl b = Data in to column b. 2) An interrupted burst of 4, 8 or 16 is shown, 2 data elements are written. 3) tWR is referenced from the positive clock edge after the last desired Data In pair. 4) A10 is LOW with the WRITE command (Auto Precharge is disabled) 5) *1=can be Don't Care for programmed burst length of 4 6) *2=for programmed burst length of 4, DQS becomes Don't Care at this point 7.7 Precharge The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will be available for a subsequent row access a specified time (t RP) after the PRECHARGE command is issued. Input A10 determines whether one or all banks are to be precharged. In case where only one bank is to be precharged, inputs BA0, BA1 select the bank. Otherwise BA0, BA1 are treated as “Don‟t Care”. Once a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE command being issued. A PRECHARGE command will be treated as a NOP if there is no open row in that bank, or if the previously open row is already in the process of prechargin g. - 39 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 7.7.1 Precharge Command CK CK CKE CS RAS CAS WE Address All Banks A10 One Bank BA0,BA1 BA = Don't Care BA=BANK Address (if A10 = L,otherwise Don't Care) (High) 7.8 Auto Precharge Auto Precharge is a feature which performs the same individual bank precharge function as described above, but without requiring an explicit command. This is accomplished by using A10 (A10 = High), to enable Auto Precharge in conjunction with a specific READ or WRITE command. A precharge of the bank / row that is addressed with the READ or WRITE command is automatically performed upon completion of the read or write burst. Aut o Precharge is non persistent in that it is either enabled or disabled for each individual READ or WRITE command. Auto Precharge ensures that a precharge is initiated at the earliest valid stage within a burst. The user must not issue another command to the same bank until the precharing time (tRP) is completed. This is determined as if an explicit PRECHARGE command was issued at the earliest possible time, as described for each burst type in the Operation section of this specification. 7.9 Refresh Requirements LPDDR SDRAM devices require a refresh of all rows in any rolling 64ms interval. Each refresh is generated in one of two ways: by an explicit AUTO REFRESH command, or by an internally timed event in SELF REFRESH mode. Dividing the number of device rows into the rolling 64ms interval defines the average refresh interval (t REFI), which is a guideline to controllers for distributed refresh timing. 7.10 Auto Refresh AUTO REFRESH command is used during normal operation of the LPDDR SDRAM. This command is non persistent, so it must be issued each time a refresh is required. The refresh addressing is generated by the internal refresh controller. The LPDDR SDRAM requires AUTO REFRESH commands at an average periodic interval of tREFI. - 40 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 7.10.1 Auto Refresh Command CK CK CKE CS RAS CAS WE A0-An BA0,BA1 (High) = Don't Care 7.11 Self Refresh The SELF REFRESH command can be used to retain data in the LPDDR SDRAM, even if the rest of the system is powered down. When in the Self Refresh mode, the LPDDR SDRAM retains data without external clocking. The LPDDR SDRAM device has a built-in timer to accommodate Self Refresh operation. The SELF REFRESH command is initiated like an AUTO REFRESH command except CKE is LOW. Input signals except CKE are “Don‟t Care” during Self Refresh. The user may ha lt the external clock one clock after the SELF REFRESH command is registered. Once the command is registered, CKE must be held low to keep the device in Self Refresh mode. The clock is internally disabled during Self Refresh operation to save power. The mi nimum time that the device must remain in Self Refresh mode is tRFC. The procedure for exiting Self Refresh requires a sequence of commands. First, the clock must be stable prior to CKE going back High. Once Self Refresh Exit is registered, a delay of at l east tXS must be satisfied before a valid command can be issued to the device to allow for completion of any internal refresh in progress. The use of Self Refresh mode introduces the possibility that an internally timed refresh event can be missed when CKE is raised for exit from Self Refresh mode. Upon exit from Self Refresh an extra AUTO REFRESH command is recommended. In the Self Refresh mode, one additional power-saving option exist: Partial Array Self Refresh (PASR); It is described in the Extended Mode Register section. - 41 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 7.11.1 Self Refresh Command CK CK CKE CS RAS CAS WE A0-An BA0,BA1 = Don't Care 7.11.2 Auto Refresh Cycles Back-to-Back CK CK Command PRE tRP NOP ARF NOP tRFC NOP ARF NOP tRFC NOP ACT Address Ba,A Row n A10 (AP) DQ Pre All High-z Row n = Don't Care Ba A, Row n = Bank A, Row n - 42 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 7.11.3 Self Refresh Entry and Exit CK CK CKE Command Address A 10(AP) DQ Pre All High z NOP tRP > t RFC tXSR t RFC PRE NOP ARF NOP NOP NOP ARF ACT Ba, A Row n Row n Enter Self Refresh Mode Exit from Self Refresh Mode Any Command (Auto Refresh Recommene ) d =Dont Care ' 7.12 Power Down Power-down is entered when CKE is registered Low (no accesses can be in progress). If power -down occurs when all banks are idle, this mode is referred to as precharge power -down; if power-down occurs when there is a row active in any bank, this mode is referred to as active power-down. Entering power-down deactivates the input and output buffers, excluding CK, CK and CKE. In power-down mode, CKE Low must be maintained, and all other input signals are “Don‟t Care”. The minimum power -down duration is specified by tCKE. However, power-down duration is limited by the refresh requirements of the device. The power-down state is synchronously exited when CKE is registered High (along with a NOP or DESELECT command). A valid command may be applied t XP after exit from power-down. For Clock Stop during Power-Down mode, please refer to the Clock Stop subsection in this specification. 7.12.1 Power-Down Entry and Exit CK CK CKE tRP tCKE tXP Command PRE NOP NOP NOP NOP NOP Valid Address Valid A10 (AP) DQ Pre All High-z Valid Power Down Entry Precharge Power-Down mode shown; all banks are idle and tRP is met when Power-down Entry command is issued Exit from Power Down Any Command = Don't Care - 43 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 7.13 Deep Power Down The Deep Power-Down (DPD) mode enables very low standby currents. All internal voltage generators inside the LPDDR SDRAM are stopped and all memory data is lost in this mode. All the information in the Mode Register and the Extended Mode Register is lost. Deep Power-Down is entered using the BURST TERMINATE command except that CKE is registered Low. All banks must be in idle state with no activity on the data bus prior to entering the DPD mode. While in this state, CKE must be held in a constant Low state. To exit the DPD mode, CKE is taken high after the clock is stable and NOP commands must be maintained for at least 200μs. After 200μs a complete re-initialization is required following steps 4 through 11 as defined for the initialization sequence. 7.13.1 Deep Power-Down Entry and Exit T0 CK CK CKE T1 Ta0 Ta1 Ta2 Command Address DQS DQ DM NOP DPD NOP Valid Valid tRP T=200us Enter DPD Exit DPD Mode Mode 1) Clock must be stable before exiting Deep Power-Down mode. That is, the clock must be cycling within specifications by Ta0 2) Device must be in the all banks idle state prior to entering Deep Power-Down mode 3) 200us is required before any command can be applied upon exiting Deep-Down mode 4) Upon exiting Deep Power-Down mode a PRECHARGE ALL command must be issued, followed by two REFRESH commands and a load mode register sequence = Don't Care - 44 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 7.14 Clock Stop Stopping a clock during idle periods is an effective method of reducing power consumption. The LPDDR SDRAM supports clock stop under the following conditions:  the last command (ACTIVE, READ, WRITE, PRECHARGE, AUTO REFRESH or MODE REGISTER SET) has executed to completion, including any data-out during read bursts; the number of clock pulses per access command depends on the device‟s AC timing parameters and the clock freq uency;  the related timing conditions (tRCD, tWR, tRP, tRFC, tMRD) has been met;  CKE is held High W hen all conditions have been met, the device is either in “idle state” or “row active state” and clock stop mode may be entered with CK held Low and CK held High. Clock stop mode is exited by restarting the clock. At least one NOP command has to be issued before the next access command may be applied. Additional clock pulses might be required depending on the system characteristics. The following Figure shows clock stop mode entry and exit.  Initially the device is in clock stop mode  The clock is restarted with the rising edge of T0 and a NOP on the command inputs  W ith T1 a valid access command is latched; this command is followed by N OP commands in order to allow for clock stop as soon as this access command is completed  Tn is the last clock pulse required by the access command latched with T1  The clock can be stopped after Tn 7.14.1 Clock Stop Mode Entry and Exit T0 CK CK CKE T1 T2 Tn Timing Condition NOP CMD NOP NOP NOP Command Address DQ,DQS Valid (High-Z) = Don't Care Clock Stopped Exit Clock Valid Stop Command Mode Enter Clock Stop Mode - 45 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 8. ELECTRICAL CHARACTERISTIC 8.1 Absolute Maximum Ratings PARAMETER Voltage on VDD relative to VSS Voltage on VDDQ relative to VSS Voltage on any pin relative to VSS Operation Case Temperature SYMBOL VDD VDDQ VIN, VOUT Tc TSTG IOUT PD VALUES MIN −0.3 −0.3 −0.3 -25 -40 −55 M AX 2.7 2.7 2.7 85 85 150 ± 50 1.0 UNITS V V V °C °C mA W Storage Temperature Short Circuit Output Current Power Dissipation 8.2 Input/Output Capacitance PARAMETER Input capacitance, CK, CK Input capacitance delta, CK, CK Input capacitance, all other input-only pins Input capacitance delta, all other input-only pins Input/ output capacitance, DQ,DM,DQS Input/output capacitance delta, DQ, DM, DQS Notes: 1. 2. 3. These values are guaranteed by design. These capacitance values are for package with single monolithic devices only. Multiple die packages will have parallel capacitive loads. Although DM is an input-only pin, the input capacitance of this pin must model the input capacitance of the DQ and DQS pins. This is required to match signal propagation times of DQ, DQS and DM in the system. SYMBOL MIN CCK CDCK CI CDI CIO CDIO 3.0 1.5 1.5 M AX 3.0 0.25 3.0 0.5 5.0 0.50 UNITS pF pF pF pF pF pF NOTES 3 3 - 46 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 8.3 Electrical Characteristics and AC/DC Operating Conditions All values are recommended operating conditions unless otherwise noted. 8.3.1 Electrical Characteristics and AC/DC Operating Conditions PARAMETER/CONDITION Supply Voltage I/O Supply Voltage SYMBOL VDD VDDQ MIN 1.70 1.70 M AX 1.95 1.95 UNITS V V NOTES ADDRESS AND COMMAND INPUTS (A0~An, BA0,BA1,CKE, CS , RAS , CAS , WE ) Input High Voltage Input Low Voltage VIH VIL 0.8*VDDQ −0.3 VDDQ + 0.3 0.2*VDDQ V V CLOCK INPUTS (CK, CK ) DC Input Voltage DC Input Differential Voltage AC Input Differential Voltage AC Differential Crossing Voltage DC Input High Voltage DC Input Low Voltage AC Input High Voltage AC Input Low Voltage DC Output High Voltage (IOH=−0.1mA) DC Output Low Voltage (IOL=0.1mA) Input Leakage Current Output Leakage Current VIN VID (DC) VID (AC) VIX VIHD (DC) VILD (DC) VIHD (AC) VILD (AC) VOH VOL IiL IoL −0.3 0.4*VDDQ 0.6*VDDQ 0.4*VDDQ 0.7*VDDQ −0.3 0.8*VDDQ −0.3 0.9*VDDQ -1 -5 VDDQ + 0.3 VDDQ + 0.6 VDDQ + 0.6 0.6*VDDQ VDDQ + 0.3 0.3*VDDQ VDDQ + 0.3 0.2*VDDQ 0.1*VDDQ 1 5 V V V V V V V V V V uA uA 2 2 3 DATA INPUTS (DQ, DM, DQS) DATA OUTPUTS (DQ, DQS) Leakage Current Notes: 1. All voltages referenced to VSS and VSSQ must be same potential. 2. VID (DC) and VID (AC) are the magnitude of the difference between the input level on CK and CK . 3. The value of VIX is expected to be 0.5*VDDQ and must track variations in the DC level of the same. - 47 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 8.4 IDD Specification Parameters and Test Conditions 8.4.1 IDD Specification Parameters and Test Conditions PARAMETER Operating one bank activeprecharge current Precharge power-down standby current Precharge power-down standby current with clock stop Precharge non power-down standby current Precharge non power-down standby current with clock stop Active powerdown standby current Active powerdown standby current with clock stop Active non power-down standby current Active non power-down standby current with clock stop Operating burst read current Operating burst write current Auto-Refresh Current Deep PowerDown current (X16) -5 40 SYMBOL IDD0 TEST CONDITION tRC = tRCmin ; tCK = tCKmin ; CKE is HIGH; CS is HIGH between valid commands; address inputs are SWITCHING; data bus inputs are STABLE all banks idle, CKE is LOW; CS is HIGH, tCK = tCKmin ; address and control inputs are SWITCHING; data bus inputs are STABLE all banks idle, CKE is LOW; CS is HIGH, CK = LOW, CK = HIGH; address and control inputs are SWITCHING; data bus inputs are STABLE Low power Normal power Low power Normal power -6 38 - 75 35 UNIT mA 0 .6 0.8 0 .6 0.8 10 0 .6 0.8 0 .6 0.8 10 0 .6 mA 0.8 0 .6 mA 0.8 10 mA IDD2P IDD2PS IDD2N all banks idle, CKE is HIGH; CS is HIGH, tCK = tCKmin; address and control inputs are SWITCHING; data bus inputs are STABLE all banks idle, CKE is HIGH; CS is HIGH, CK = LOW, CK = HIGH; address and control inputs are SWITCHING; data bus inputs are STABLE one bank active, CKE is LOW; CS is HIGH, tCK = tCKmin;address and control inputs are SWITCHING; data bus inputs are STABLE one bank active, CKE is LOW; CS is HIGH, CK = LOW, CK = HIGH; address and control inputs are SWITCHING; data bus inputs are STABLE one bank active, CKE is HIGH; CS is HIGH, tCK = tCKmin; address and control inputs are SWITCHING; data bus inputs are STABLE one bank active, CKE is HIGH; CS is HIGH, CK = LOW, CK = HIGH; address and control inputs are SWITCHING; data bus inputs are STABLE one bank active; BL = 4; CL = 3; tCK = tCKmin ; continuous read bursts; IOUT = 0 mA; address inputs are SWITCHING; 50% data change each burst transfer one bank active; BL = 4; t CK = t CKmin ; continuous write bursts; address inputs are SWITCHING; 50% data change each burst transfer tRC = tRFCmin ; tCK = tCKmin ; burst refresh; CKE is HIGH; address and control inputs are SWITCHING; data bus inputs are STABLE Address and control inputs are STABLE; data bus inputs are STABLE IDD2NS 3 3 3 mA IDD3P 3 3 3 mA IDD3PS 3 3 3 mA IDD3N 25 25 25 mA IDD3NS 15 15 15 mA IDD4R 75 70 70 mA IDD4W IDD5 IDD8(4) 55 75 10 50 75 10 50 75 10 mA mA uA - 48 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR (X32) PARAMETER Operating one bank activeprecharge current Precharge power-down standby current Precharge power-down standby current with clock stop Precharge non power-down standby current Precharge non power-down standby current with clock stop Active powerdown standby current Active powerdown standby current with clock stop Active non power-down standby current Active non power-down standby current with clock stop Operating burst read current Operating burst write current Auto-Refresh Current Deep PowerDown current SYMBOL IDD0 TEST CONDITION tRC = tRCmin ; tCK = tCKmin ; CKE is HIGH; CS is HIGH between valid commands; address inputs are SWITCHING; data bus inputs are STABLE all banks idle, CKE is LOW; CS is HIGH, tCK = tCKmin ; address and control inputs are SWITCHING; data bus inputs are STABLE all banks idle, CKE is LOW; CS is HIGH, CK = LOW, CK = HIGH; address and control inputs are SWITCHING; data bus inputs are STABLE Low power Normal power Low power Normal power -5 40 -6 38 - 75 35 UNIT mA 0 .6 0.8 0 .6 0.8 10 0 .6 0.8 0 .6 0.8 10 0 .6 mA 0.8 0 .6 mA 0.8 10 mA IDD2P IDD2PS IDD2N all banks idle, CKE is HIGH; CS is HIGH, tCK = tCKmin; address and control inputs are SWITCHING; data bus inputs are STABLE all banks idle, CKE is HIGH; CS is HIGH, CK = LOW, 3 3 3 mA IDD2NS CK = HIGH; address and control inputs are SWITCHING; data bus inputs are STABLE one bank active, CKE is LOW; CS is HIGH, tCK = tCKmin; address and control inputs are SWITCHING; data bus inputs are STABLE one bank active, CKE is LOW; CS is HIGH, CK = LOW, CK = HIGH; address and control inputs are SWITCHING; data bus inputs are STABLE one bank active, CKE is HIGH; CS is HIGH, tCK = tCKmin; address and control inputs are SWITCHING; data bus inputs are STABLE one bank active, CKE is HIGH; CS is HIGH, CK = LOW, CK = HIGH; address and control inputs are SWITCHING; data bus inputs are STABLE one bank active; BL = 4; CL = 3; tCK = tCKmin ; continuous read bursts; IOUT = 0 mA; address inputs are SWITCHING; 50% data change each burst transfer one bank active; BL = 4; t CK = t CKmin ; continuous write bursts; address inputs are SWITCHING; 50% data change each burst transfer tRC = tRFCmin ; tCK = tCKmin ; burst refresh; CKE is HIGH; address and control inputs are SWITCHING; data bus inputs are STABLE Address and control inputs are STABLE; data bus inputs are STABLE IDD3P 3 3 3 mA IDD3PS 3 3 3 mA IDD3N 25 25 25 mA IDD3NS 15 15 15 mA IDD4R 75 70 70 mA IDD4W 55 50 50 mA IDD5 75 75 75 mA IDD8(4) 10 10 10 uA Notes: 1. IDD specifications are tested after the device is properly initialized. 2. Input slew rate is 1V/ns. 3. Definitions for IDD: LOW is defined as VIN ≤ 0.1 * VDDQ;HIGH is defined as VIN ≥ 0.9 * VDDQ; STABLE is defined as inputs stable at a HIGH or LOW level; SWITCHING is defined as: - Address and command: inputs changing between HIGH and LOW once per two clock cycles; - Data bus inputs: DQ changing between HIGH and LOW once per clock cycle; DM and DQS are STABLE. 4. IDD8 are typical value at 25℃. - 49 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR IDD6 Conditions : IDD6 ATCSR Range Full Array 1/2 Array 1/4 Array Notes: 1. Measured with outputs open. 2. IDD6 is typical value. Low Power 45℃ 450 350 300 85℃ 600 500 400 Normal Power 45℃ 650 550 500 85℃ 800 700 600 Units uA - 50 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 8.5 AC Timings [Recommended Operating Conditions: Notes 1-9] -5 PARAMETER DQ output access time from CK/ CK CL=3 -6 MAX 5.0 6.5 5.0 6.5 0.55 0.55 MIN 2.0 2.0 2.0 2.0 0.45 0.45 Min (tCL, tCH) - 75 UNIT NOTES MAX 5.0 6.5 5.0 6.5 0.55 0.55 MIN 2.0 2.0 2.0 2.0 0.45 0.45 Min (tCL, tCH) SYMBOL MIN 2.0 tAC CL=2 tDQSCK MAX 6.0 ns 6.5 6.0 ns 6.5 0.55 0.55 tCK tCK ns ns ns ns ns ns ns ns ns ns ns ns ns ns 6.0 ns 19 20 11 11 6.5 0.6 ns ns 0.75 ns tCK tCK tCK tCK tCK tCK 10,11 12 12 13,14,15 13,14,16 13,14,15 13,14,16 17 15,18 16,18 15,18 16,18 17 19 2.0 2.0 2.0 tCH tCL tHP 0.45 0.45 Min (tCL, tCH) CL=3 DQS output access time from CK/ CK Clock high-level width Clock low-level width Clock half period CL=2 CL=3 Clock cycle time CL=2 DQ and DM input setup time fast 5 tCK 12 0.48 tDS 0.58 0.48 tDH 0.58 tDIPW 1.6 0.9 tIS 1.1 0.9 tIH 1.1 tIPW tLZ 2.3 1.0 5.0 tHZ 6.5 tDQSQ tQH tQHS tDQSS tDQSH tDQSL tDSS tDSH tMRD 0.75 0.4 0.4 0.2 0.2 2 tHP-tQHS 6 12 0.6 0.7 0.6 0.7 1.6 1.1 1.3 1.1 1.3 2.6 1.0 5.0 6.5 0.5 tHP-tQHS 7.5 12 0.8 0.9 0.8 0.9 1.8 1.3 1.5 1.3 1.5 2.6 1.0 slow fast DQ and DM input hold time slow DQ and DM input pulse width Address and control input setup time Address and control input hold time fast slow fast slow Address and control input pulse width DQ & DQS low-impedance time from CK/ CK DQ & DQS high-impedance time from CK/ CK DQS-DQ skew DQ/DQS output hold time from DQS Data hold skew factor Write command to 1st DQS latching transition DQS input high-level width DQS input low-level width DQS falling edge to CK setup time DQS falling edge hold time from CK MODE REGISTER SET command CL=3 CL=2 0.4 tHP-tQHS 0.5 1.25 0.6 0.6 0.75 0.4 0.4 0.2 0.2 2 065 1.25 0.6 0.6 0.75 0.4 0.4 0.2 0.2 2 1.25 0.6 0.6 - 51 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR -5 PARAMETER period Write preamble setup time Write postamble Write preamble CL = 3 Read preamble CL = 2 Read postamble ACTIVE to PRECHARGE command period ACTIVE to ACTIVE command period AUTO REFRESH to ACTIVE/AUTO REFRESH command period ACTIVE to READ or WRITE delay PRECHARGE command period ACTIVE bank A to ACTIVE bank B delay WRITE recovery time Auto precharge write recovery + precharge time Internal write to Read command delay Self Refresh exit to next valid command delay Exit power down to next valid command delay CKE min. pulse width (high and low pulse width) Refresh Period Average periodic refresh interval MRS for SRR to READ READ of SRR to next valid command -6 MAX MIN MAX MIN - 75 UNIT NOTES MAX SYMBOL MIN tWPRES tWPST tWPRE tRPRE 0 0.4 0.25 0.9 0.5 1.1 1.1 0.6 70,000 0.6 0 0.4 0.25 0.9 0.5 0.4 42 tRAS+ tRP 72 18 3 12 15 - 0 0.6 0.4 0.25 1.1 1.1 0.6 70,000 0.9 0.5 0.4 45 tRAS+ tRP 72 22.5 3 15 15 - ns 0.6 tCK tCK 1.1 1.1 0.6 70,000 tCK tCK tCK ns ns ns ns tCK ns ns tCK tCK ns tCK tCK 64 7.8 ms μs tCK tCK 21 22 23 23 tRPST tRAS tRC tRFC tRCD tRP tRRD tWR tDAL tWTR tXSR tXP tCKE tREF tREFI tSRR tSRC 0.4 40 tRAS+ tRP 72 15 3 10 15 - 24 25 2 120 2 1 64 7.8 2 CL+1 2 120 1 1 64 7.8 2 CL+1 1 120 1 1 26 27 28,29 2 CL+1 - 52 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR Notes: 1. All voltages referenced to VSS. 2. All parameters assume proper device initialization. 3. Tests for AC timing may be conducted at nominal supply voltage levels, but the related specifications and device operation are guaranteed for the full voltage and temperature range specified. 4. The circuit shown below represents the timing reference load used in defining the relevant timing parameters of the part. It is not intended to be either a precise representation of the typical system environment nor a depiction of the actual load presented by a production tester. System designers will use IBIS or other simulation tools to correlate the timing reference load to system environment. Manufacturers will correlate to their production test conditions (generally a coaxial transmission line terminated at the tester electronics). For the half strength driver with a nominal 1 0pF load parameters tAC and tQH are expected to be in the same range. However, these parameters are not subject to production test but are estimated by design / characterization. Use of IBIS or other simulation tools for system design validation is suggest ed. I/O Time Reference Load Z0 = 50 Ohms 20pF 5. 6. 7. 8. 9. The CK/ CK input reference voltage level (for timing referenced to CK/ CK ) is the point at which CK and CK cross; the input reference voltage level for signals other than CK/ CK is VDDQ/2. The timing reference voltage level is VDDQ/2. AC and DC input and output voltage levels are defined in the section for Electrical Characteristics and AC/DC operating conditions. A CK/ CK differential slew rate of 2.0 V/ns is assumed for all parameters. 10. 11. 12. 13. 14. 15. 16. 17. 18. CAS latency definition: with CL = 3 the first data element is valid at (2 * tCK + tAC) after the clock at which the READ command was registered; with CL = 2 the first data element is valid at (tCK + tAC) after the clock at which the READ command was registered Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be greater than the minimum specification limits of tCL and tCH) tQH = tHP - tQHS, where tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCL, tCH). tQHS accounts for 1) the pulse duration distortion of on-chip clock circuits; and 2) the worst case push-out of DQS on one transition followed by the worst case pull -in of DQ on the next transition, both of which are, separately, due to data pin skew and output pattern effects, and p -channel to n-channel variation of the output drivers. The only time that the clock frequency is allowed to change is during clock stop, power -down or self-refresh modes. The transition time for DQ, DM and DQS inputs is measured between VIL(DC) to VIH(AC) fo r rising input signals, and VIH(DC) to VIL(AC) for falling input signals. DQS, DM and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transitions through the DC region must be monotonic. Input slew rate ≥ 1.0 V/ns. Input slew rate ≥ 0.5 V/ns and < 1.0 V/ns. These parameters guarantee device timing but they are not necessarily tested on each device. The transition time for address and command inputs is measured between VIH and VIL. - 53 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 19. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referred to a specific voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ). 20. tDQSQ consists of data pin skew and outpu t pattern effects, and p-channel to n-channel variation of the output drivers for any given cycle. 21. The specific requirement is that DQS be valid (HIGH, LOW, or some point on a valid transition) on or before the corresponding CK edge. A valid transition is defined as monotonic and meeting the input slew rate specifications of the device. When no writes were previously in progress on the bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW, or tran sitioning from HIGH to LOW at this time, depending on tDQSS. 22. The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but system performance (bus turnaround) will degrade accordingly. 23. A low level on DQS may be maintained during High-Z states (DQS drivers disabled) by adding a weak pulldown element in the system. It is recommended to turn off the weak pull -down element during read and write bursts (DQS drivers enabled). 24. At least one clock cycle is required during tWR time when in auto precharge mode. 25. tDAL = (tWR/tCK) + (tRP/tCK): for each of the terms, if not already an integer, round to the next higher integer. 26. There must be at least two clock pulses during the tXSR period. 27. There must be at least one clock pulse during the tXP period. 28. tREFI values are dependent on density and bus width. 29. A maximum of 8 Refresh commands can be posted to any given LPDDR SDRAM, meaning that the maximum absolute interval between any Refresh command and the next R efresh command is 8*tREFI. 8.5.1 CAS Latency Definition (With CL=3) T0 CK CK Command READ NOP NOP NOP tDQSCKmin NOP NOP NOP tRPST T1 T2 T2n T3 T3n T4 T4n T5 T5n T6 CL=3 tDQSCKmin tRPRE DQS All DQ, collectively tLZmin T2 tLZmin T2n T3 T3n T4 T4n T5 T5n 1)DQ transitioning after DQS transition define tDQSQ window. 2)ALL DQ must transition by tDQSQ after DQS transitions, regardless of tAC 3)tAC is the DQ output window relative to CK,and is the long term component of DQ skew. - 54 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 8.5.2 Output Slew Rate Characteristics PARAMETER Pull-up and Pull-Down Slew Rate for Full Strength Driver Pull-up and Pull-Down Slew Rate for Three-Quarter Strength Driver Pull-up and Pull-Down Slew Rate for Half Strength Driver Output Slew rate Matching ratio (Pull-up to Pull-down) MIN 0.7 0.5 0.3 0.7 M AX 2.5 1.75 1.0 1.4 UNIT V/ns V/ns V/ns NOTES 1,2 1,2 1,2 3 Notes: 1. Measured with a test load of 20 pF connected to VSSQ. 2. Output slew rate for rising edge is measured between VILD(DC) to VIHD(AC) and for falling edge between VIHD(DC) to VILD(AC). 3. The ratio of pull-up slew rate to pull-down slew rate is specified for the same temperature and voltage, over the entire temperature and voltage range. For a given output, it represents the maximum difference between pull -up and pull-down drivers due to process variation. 8.5.3 AC Overshoot/Undershoot Specification PARAMETER Maximum peak amplitude allowed for overshoot Maximum peak amplitude allowed for undershoot The area between overshoot signal and VDD must be less than or equal to The area between undershoot signal and GND must be less than or equal to 8.5.4 AC Overshoot and Undershoot Definition SPECIFICATION 0.5 V 0.5 V 3 V-ns 3 V-ns Overshoot Area 2.5 2.0 VDD 1.5 Voltage (V) 1.0 Max Amplitude = 0.5V 0.5 Max Area = 3V-ns 0 VSS -0.5 Time (ns) Undershoot Area - 55 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 9. PACKAGE DIMENSIONS 9.1: LPDDR X 16 VBGA60Ball (8X9 MM^2, Ball pitch:0.8mm) Note: 1. Ball land:0.5mm. Ball opening:0.4mm. PCB Ball land suggested ≦0.4mm 2. Dimensions apply to Solder Balls Post-Reflow. The Pre-Reflow diameter is 0.42 on a 0.4 SMD Ball Pad. - 56 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 9.2: LPDDR X 32 VBGA90Ball (8X13 MM^2, Ball pitch:0.8mm) Note: 1. Ball land:0.5mm. Ball opening:0.4mm. PCB Ball land suggested ≦0.4mm 2. Dimensions apply to Solder Balls Post-Reflow. The Pre-Reflow diameter is 0.42 on a 0.4 SMD Ball Pad. - 57 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 10. ORDERING INFORMATION Mobile LPDDR/LPSDR SDRAM Package Part Numbering W 94 9 D 6 C B H X 5 I Product Line 98:mobile LPSDR SDRAM 94:mobile LPDDR SDRAM Density 7:27=128M 8:28=256M 9:29=512M Power Supply D:1.8/1.8 VDD / VDDQ I/O Ports width 6:16bit 2:32bit Generation Design revision. Package or KGD K: KGD B: BGA Part number W949D6CBHX5I W949D6CBHX5E W949D6CBHX6E W949D6CBHX6G W949D2CBJX5I W949D2CBJX5E W949D2CBJX6E W949D2CBJX6G Temperature with standard Idd6 G:-25C~85C with low power Idd6 E:-25C~85C I:-40C~85C Clock rate 5:5ns200MHz 6:6ns166MHz 7:7.5ns133MHz Package Material X: Lead-free + Halogen-free Package configuration code G: 54VFBGA, 8mmx9mm H: 60VFBGA, 8mmx9mm J: 90VFBGA, 8mmx13mm VDD/VDDQ I/O width Package 1.8V/1.8V 1.8V/1.8V 1.8V/1.8V 1.8V/1.8V 1.8V/1.8V 1.8V/1.8V 1.8V/1.8V 1.8V/1.8V 16 16 16 16 32 32 32 32 60VFBGA 60VFBGA 60VFBGA 60VFBGA 90VFBGA 90VFBGA 90VFBGA 90VFBGA Others 200MHz, -40C~85C, Low 200MHz, -25C~85C, Low 166MHz, -25C~85C, Low 166MHz, -25C~85C 200MHz, -40C~85C, Low 200MHz, -25C~85C, Low 166MHz, -25C~85C, Low 166MHz, -25C~85C power power power power power power - 58 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR 11. REVISION HISTORY VERSION A01-001 A01-002 DATE 01/28/2011 03/07/2011 PAGE All 48,49 All 4 4 52 48,49 DESCRIPTION Product datasheet for customer. Update IDD specification. Update name of document title. Unify the datasheet for package product. Update operating temperature range. Update tRFC value to 72ns. Update Idd2N value to 10mA. A01-003 03/14/2011 A01-004 03/24/2011 7,12,18,47,52 Remove TQ description. 17 48,49 50 12 48,49 48,49 Update definition of SRR[10:8]. Update IDD4R & IDD4W value. Add PASR value for Normal power grade. Refine Figure 6.1.2. Update IDD2P & IDD2PS value. Update IDD3P,IDD3PS, IDD3N and IDD3NS value. A01-005 05/17/2011 A01-006 A01-007 06/14/2011 09/21/2011 - 59 - Publication Release Date: Sep, 21, 2011 Revision A01-007 W949D6CB / W949D2CB 512Mb Mobile LPDDR Important Notice Winbond products are not designed, intended, authorized or warranted for use as components in systems or equipment intended for surgical implantation, atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, or for other applications intended to support or sustain life. Furthermore, Winbond products are not intended for applications wherein failure of Winbond products could result or lead to a situation where in personal injury, death or severe property or environmental damage could occur. Winbond customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Winbond for any damages resulting from such improper use or sales. ----------------------------------------------------------------------------------------------------------------------------- -------------------Please note that all data and specifications are subject to change without notice. All the trademarks of products and companies mentioned in the datasheet belong to their respective owners. - 60 - Publication Release Date: Sep, 21, 2011 Revision A01-007