W966D6HBGX7I

Winbond - Pseudo SRAM Page 1 of 1 Pseudo SRAM Part No. W966D6HBG Datasheet Description This is a 64M bit CellularRAM™ compliant products, organized as 4M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. Supports asynchronous and burst operations VCC, VCCQ Voltages:1.7V–1.95V VCC, 1.7V–1.95V VCCQ Random access time: 70ns Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential Max clock rate: 133 MHz (tCLK = 7.5ns) tACLK: 5.5ns at 133 MHz, 7ns at 104 MHz Low-power features: TCR, PAR, DPD Page mode READ access:Sixteen-word page size Interpage READ access: 70ns, Intrapage READ access: 20ns Features Diagram N/A Package 54VFBGA(6X8X1.0mm), RoHS compliant IBIS Model N/A Other Spice Files Model N/A Verilog N/A Model Development Tools N/A Others N/A Contact us: PSRAM@winbond.com http://www.winbond-usa.com/hq/enu/ProductAndSales/ProductLines/MobileRAM/Pseudo... 2/24/2015