W9825G6KH
4 M 4 BANKS 16 BITS SDRAM
Table of Contents1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
GENERAL DESCRIPTION ......................................................................................................... 3
FEATURES ................................................................................................................................. 3
ORDER INFORMATION ............................................................................................................. 3
PIN CONFIGURATION ............................................................................................................... 4
PIN DESCRIPTION..................................................................................................................... 5
BLOCK DIAGRAM ...................................................................................................................... 6
FUNCTIONAL DESCRIPTION.................................................................................................... 7
7.1
Power Up and Initialization ............................................................................................. 7
7.2
Programming Mode Register .......................................................................................... 7
7.3
Bank Activate Command ................................................................................................ 7
7.4
Read and Write Access Modes ...................................................................................... 7
7.5
Burst Read Command .................................................................................................... 8
7.6
Burst Write Command .................................................................................................... 8
7.7
Read Interrupted by a Read ........................................................................................... 8
7.8
Read Interrupted by a Write............................................................................................ 8
7.9
Write Interrupted by a Write ............................................................................................ 8
7.10 Write Interrupted by a Read............................................................................................ 8
7.11 Burst Stop Command ..................................................................................................... 8
7.12 Addressing Sequence of Sequential Mode .................................................................... 9
7.13 Addressing Sequence of Interleave Mode ...................................................................... 9
7.14 Auto-precharge Command ........................................................................................... 10
7.15 Precharge Command .................................................................................................... 10
7.16 Self Refresh Command ................................................................................................ 10
7.17 Power Down Mode ....................................................................................................... 11
7.18 No Operation Command ............................................................................................... 11
7.19 Deselect Command ...................................................................................................... 11
7.20 Clock Suspend Mode .................................................................................................... 11
OPERATION MODE ................................................................................................................. 12
ELECTRICAL CHARACTERISTICS ......................................................................................... 13
9.1
Absolute Maximum Ratings .......................................................................................... 13
9.2
Recommended DC Operating Conditions .................................................................... 13
9.3
Capacitance .................................................................................................................. 14
9.4
DC Characteristics ........................................................................................................ 14
9.5
AC Characteristics and Operating Condition ................................................................ 15
TIMING WAVEFORMS ............................................................................................................. 17
10.1 Command Input Timing ................................................................................................ 17
10.2 Read Timing.................................................................................................................. 18
10.3 Control Timing of Input/Output Data ............................................................................. 19
10.4 Mode Register Set Cycle .............................................................................................. 20
OPERATING TIMING EXAMPLE ............................................................................................. 21
Publication Release Date: Sep. 01, 2014
Revision: A02
-1-
W9825G6KH
12.
13.
11.1 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3) ...................................... 21
11.2 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto-precharge) ........... 22
11.3 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3) ...................................... 23
11.4 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto-precharge) ........... 24
11.5 Interleaved Bank Write (Burst Length = 8) ................................................................... 25
11.6 Interleaved Bank Write (Burst Length = 8, Auto-precharge) ........................................ 26
11.7 Page Mode Read (Burst Length = 4, CAS Latency = 3) .............................................. 27
11.8 Page Mode Read / Write (Burst Length = 8, CAS Latency = 3) ................................... 28
11.9 Auto-precharge Read (Burst Length = 4, CAS Latency = 3) ........................................ 29
11.10 Auto-precharge Write (Burst Length = 4) .................................................................... 30
11.11 Auto Refresh Cycle ..................................................................................................... 31
11.12 Self Refresh Cycle ....................................................................................................... 32
11.13 Burst Read and Single Write (Burst Length = 4, CAS Latency = 3)............................ 33
11.14 Power Down Mode ...................................................................................................... 34
11.15 Auto-precharge Timing (Read Cycle) .......................................................................... 35
11.16 Auto-precharge Timing (Write Cycle) .......................................................................... 36
11.17 Timing Chart of Read to Write Cycle ........................................................................... 37
11.18 Timing Chart of Write to Read Cycle ........................................................................... 37
11.19 Timing Chart of Burst Stop Cycle (Burst Stop Command) .......................................... 38
11.20 Timing Chart of Burst Stop Cycle (Precharge Command) .......................................... 38
11.21 CKE/DQM Input Timing (Write Cycle) ......................................................................... 39
11.22 CKE/DQM Input Timing (Read Cycle) ......................................................................... 40
PACKAGE SPECIFICATION .................................................................................................... 41
REVISION HISTORY ................................................................................................................ 42
Publication Release Date: Sep. 01, 2014
Revision: A02
-2-
W9825G6KH
1. GENERAL DESCRIPTION
W9825G6KH is a high-speed synchronous dynamic random access memory (SDRAM), organized as
4M words 4 banks 16 bits. W9825G6KH delivers a data bandwidth of up to 200M words per
second. To fully comply with the personal computer industrial standard, W9825G6KH is sorted into the
following speed grades: -5, -5I, -6, -6I, -6L, -75 and 75L. The -5/-5I grade parts are compliant to the
200MHz/CL3 specification (the -5I industrial grade which is guaranteed to support -40°C ≤ TA ≤ 85°C).
The -6/-6I/-6L grade parts are compliant to the 166MHz/CL3 specification (the -6I industrial grade
which is guaranteed to support -40°C ≤ TA ≤ 85°C). The -75/75L is compliant to the 133MHz/CL3
specification. The -6L and 75L parts support self refresh current IDD6 max. 1.5 mA.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W9825G6KH is ideal for main memory in
high performance applications.
2. FEATURES
3.3V ± 0.3V Power Supply
Up to 200 MHz Clock Frequency
4,194,304 Words 4 Banks 16 Bits Organization
Self Refresh Mode: Standard and Low Power
CAS Latency: 2 and 3
Burst Length: 1, 2, 4, 8 and Full Page
Burst Read, Single Writes Mode
Byte Data Controlled by LDQM, UDQM
Power Down Mode
Auto-precharge and Controlled Precharge
8K Refresh Cycles/64 mS
Interface: LVTTL
Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant
3. ORDER INFORMATION
SELF REFRESH
CURRENT (MAX)
OPERATING
TEMPERATURE
PART NUMBER
SPEED GRADE
W9825G6KH-5
200MHz/CL3 or 133MHz/CL2
2 mA
0°C ~ 70°C
W9825G6KH-5I
200MHz/CL3 or 133MHz/CL2
2 mA
-40°C ~ 85°C
W9825G6KH-6
166MHz/CL3 or 133MHz/CL2
2 mA
0°C ~ 70°C
W9825G6KH-6I
166MHz/CL3 or 133MHz/CL2
2 mA
-40°C ~ 85°C
W9825G6KH-6L
166MHz/CL3 or 133MHz/CL2
1.5 mA
0°C ~ 70°C
W9825G6KH-75
133MHz/CL3 or 100MHz/CL2
2 mA
0°C ~ 70°C
W9825G6KH75L
133MHz/CL3 or 100MHz/CL2
1.5 mA
0°C ~ 70°C
Publication Release Date: Sep. 01, 2014
Revision: A02
-3-
W9825G6KH
4. PIN CONFIGURATION
VDD
1
54
VSS
DQ0
2
53
DQ15
VDDQ
3
52
VSSQ
DQ1
4
51
DQ14
DQ2
5
50
DQ13
VSSQ
6
49
VDDQ
DQ3
7
48
DQ12
DQ4
8
47
DQ11
VDDQ
9
46
VSSQ
DQ5
10
45
DQ10
DQ6
11
44
DQ9
VSSQ
12
43
VDDQ
DQ7
13
42
DQ8
VDD
14
41
VSS
LDQM
15
40
NC
WE
16
39
UDQM
CAS
17
38
CLK
RAS
18
37
CKE
CS
19
36
A12
BS0
20
35
A11
BS1
21
34
A9
A10/AP
22
33
A8
A0
23
32
A7
A1
24
31
A6
A2
25
30
A5
A3
26
29
A4
VDD
27
28
VSS
Publication Release Date: Sep. 01, 2014
Revision: A02
-4-
W9825G6KH
5. PIN DESCRIPTION
PIN NUMBER
PIN NAME
FUNCTION
2326, 22,
2936
A0A12
Address
20, 21
BS0, BS1
Bank Select
Select bank to activate during row address latch time, or
bank to read/write during address latch time.
Data
Input/Output
Multiplexed pins for data output and input.
Chip Select
Disable or enable the command decoder. When
command decoder is disabled, new command is
ignored and previous operation continues.
2, 4, 5, 7, 8, 10,
11, 13, 42, 44,
DQ0DQ15
45, 47, 48, 50,
51, 53
19
CS
DESCRIPTION
A0A8Multiplexed pins for row and column address.
Row address: A0A12. Column address: A0A8.
Command input. When sampled at the rising edge of
Row Address
the clock, RAS , CAS and WE define the
Strobe
operation to be executed.
18
RAS
17
CAS
16
WE
15, 39
LDQM,
UDQM
Input/Output
Mask
The output buffer is placed at Hi-Z(with latency of 2)
when DQM is sampled high in read cycle. In write
cycle, sampling DQM high will block the write
operation with zero latency.
38
CLK
Clock Inputs
System clock used to sample inputs on the rising edge
of clock.
37
CKE
CKE controls the clock activation and deactivation.
Clock Enable When CKE is low, Power Down mode, Suspend mode,
or Self Refresh mode is entered.
1, 14, 27
VDD
Power
Power for input buffers and logic circuit inside DRAM.
28, 41, 54
VSS
Ground
Ground for input buffers and logic circuit inside DRAM.
3, 9, 43, 49
VDDQ
Power
Separated power from VDD, to improve DQ noise
for I/O Buffer immunity.
6, 12, 46, 52
VSSQ
Ground
Separated ground from VSS, to improve DQ noise
for I/O Buffer immunity.
40
NC
Column
Address
Strobe
Referred to RAS
Write Enable Referred to RAS
No Connection No connection.
Publication Release Date: Sep. 01, 2014
Revision: A02
-5-
W9825G6KH
6. BLOCK DIAGRAM
CLK
CLOCK
BUFFER
CKE
CS
CONTROL
RAS
GENERATOR
SIGNAL
COMMAND
CAS
DECODER
COLUMN DECODER
COLUMN DECODER
A10
MODE
REGISTER
A0
CELL ARRAY
BANK #0
CELL ARRAY
BANK #1
SENSE AMPLIFIER
SENSE AMPLIFIER
ADDRESS
BUFFER
DATA CONTROL
CIRCUIT
DQ
BUFFER
DQ0
DQ15
COLUMN
COUNTER
LDQM
UDQM
COLUMN DECODER
COLUMN DECODER
ROW DECODER
REFRESH
COUNTER
ROW DECODER
A9
A11
A12
BS0
BS1
ROW DECODER
ROW DECODER
WE
CELL ARRAY
BANK #2
SENSE AMPLIFIER
CELL ARRAY
BANK #3
SENSE AMPLIFIER
Note: The cell array configuration is 8192 * 512 * 16.
Publication Release Date: Sep. 01, 2014
Revision: A02
-6-
W9825G6KH
7. FUNCTIONAL DESCRIPTION
7.1 Power Up and Initialization
The default power up state of the mode register is unspecified. The following power up and
initialization sequence need to be followed to guarantee the device being preconditioned to each user
specific needs.
During power up, all VDD and VDDQ pins must be ramp up simultaneously to the specified voltage
when the input signals are held in the “NOP” state. The power up voltage must not exceed VDD + 0.3V
on any of the input pins or VDD supplies. After power up, an initial pause of 200 µS is required followed
by a precharge of all banks using the precharge command. To prevent data contention on the DQ bus
during power up, it is required that the DQM and CKE pins be held high during the initial pause period.
Once all banks have been precharged, the Mode Register Set Command must be issued to initialize
the Mode Register. An additional eight Auto Refresh cycles (CBR) are also required before or after
programming the Mode Register to ensure proper subsequent operation.
7.2
Programming Mode Register
After initial power up, the Mode Register Set Command must be issued for proper device operation.
All banks must be in a precharged state and CKE must be high at least one cycle before the Mode
Register Set Command can be issued. The Mode Register Set Command is activated by the low
signals of RAS , CAS , CS and WE at the positive edge of the clock. The address input data
during this cycle defines the parameters to be set as shown in the Mode Register Operation table. A
new command may be issued following the mode register set command once a delay equal to tRSC
has elapsed. Please refer to the next page for Mode Register Set Cycle and Operation Table.
7.3
Bank Activate Command
The Bank Activate command must be applied before any Read or Write operation can be executed.
The operation is similar to RAS activate in EDO DRAM. The delay from when the Bank Activate
command is applied to when the first read or write operation can begin must not be less than the RAS
to CAS delay time (tRCD). Once a bank has been activated it must be precharged before another Bank
Activate command can be issued to the same bank. The minimum time interval between successive
Bank Activate commands to the same bank is determined by the RAS cycle time of the device (tRC).
The minimum time interval between interleaved Bank Activate commands (Bank A to Bank B and vice
versa) is the Bank to Bank delay time (tRRD). The maximum time that each bank can be held active is
specified as tRAS (max).
7.4
Read and Write Access Modes
After a bank has been activated , a read or write cycle can be followed. This is accomplished by
setting RAS high and CAS low at the clock rising edge after minimum of tRCD delay. WE pin
voltage level defines whether the access cycle is a read operation ( WE high), or a write operation
( WE low). The address inputs determine the starting column address.
Reading or writing to a different row within an activated bank requires the bank be precharged and a
new Bank Activate command be issued. When more than one bank is activated, interleaved bank
Read or Write operations are possible. By using the programmed burst length and alternating the
access and precharge operations between multiple banks, seamless data access operation among
many different pages can be realized. Read or Write Commands can also be issued to the same bank
or between active banks on every clock cycle.
Publication Release Date: Sep. 01, 2014
Revision: A02
-7-
W9825G6KH
7.5
Burst Read Command
The Burst Read command is initiated by applying logic low level to CS and CAS while holding
RAS and WE high at the rising edge of the clock. The address inputs determine the starting
column address for the burst. The Mode Register sets type of burst (sequential or interleave) and the
burst length (1, 2, 4, 8 and full page) during the Mode Register Set Up cycle. Table 2 and 3 in the next
page explain the address sequence of interleave mode and sequential mode.
7.6
Burst Write Command
The Burst Write command is initiated by applying logic low level to CS , CAS and WE while
holding RAS high at the rising edge of the clock. The address inputs determine the starting column
address. Data for the first burst write cycle must be applied on the DQ pins on the same clock cycle
that the Write Command is issued. The remaining data inputs must be supplied on each subsequent
rising clock edge until the burst length is completed. Data supplied to the DQ pins after burst finishes
will be ignored.
7.7
Read Interrupted by a Read
A Burst Read may be interrupted by another Read Command. When the previous burst is interrupted,
the remaining addresses are overridden by the new read address with the full burst length. The data
from the first Read Command continues to appear on the outputs until the CAS Latency from the
interrupting Read Command the is satisfied.
7.8
Read Interrupted by a Write
To interrupt a burst read with a Write Command, DQM may be needed to place the DQs (output
drivers) in a high impedance state to avoid data contention on the DQ bus. If a Read Command will
issue data on the first and second clocks cycles of the write operation, DQM is needed to insure the
DQs are tri-stated. After that point the Write Command will have control of the DQ bus and DQM
masking is no longer needed.
7.9
Write Interrupted by a Write
A burst write may be interrupted before completion of the burst by another Write Command. When the
previous burst is interrupted, the remaining addresses are overridden by the new address and data
will be written into the device until the programmed burst length is satisfied.
7.10 Write Interrupted by a Read
A Read Command will interrupt a burst write operation on the same clock cycle that the Read
Command is activated. The DQs must be in the high impedance state at least one cycle before the
new read data appears on the outputs to avoid data contention. When the Read Command is
activated, any residual data from the burst write cycle will be ignored.
7.11 Burst Stop Command
A Burst Stop Command may be used to terminate the existing burst operation but leave the bank open
for future Read or Write Commands to the same page of the active bank. The Burst Stop Command is
defined by having RAS and CAS high with CS and WE low at the rising edge of the clock. The
data DQs go to a high impedance state after a delay which is equal to the CAS Latency in a burst read
cycle interrupted by Burst Stop.
Publication Release Date: Sep. 01, 2014
Revision: A02
-8-
W9825G6KH
7.12 Addressing Sequence of Sequential Mode
A column access is performed by increasing the address from the column address which is input to
the device. The disturb address is varied by the Burst Length as shown in Table 2.
Table 2 Address Sequence of Sequential Mode
DATA
ACCESS ADDRESS
BURST LENGTH
Data 0
n
BL = 2 (disturb address is A0)
Data 1
n+1
No address carry from A0 to A1
Data 2
n+2
BL = 4 (disturb addresses are A0 and A1)
Data 3
n+3
No address carry from A1 to A2
Data 4
n+4
Data 5
n+5
BL = 8 (disturb addresses are A0, A1 and A2)
Data 6
n+6
No address carry from A2 to A3
Data 7
n+7
7.13 Addressing Sequence of Interleave Mode
A column access is started in the input column address and is performed by inverting the address bit
in the sequence shown in Table 3.
Table 3 Address Sequence of Interleave Mode
DATA
ACCESS ADDRESS
Data 0
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 1
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 2
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 3
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 4
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 5
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 6
A8 A7 A6 A5 A4 A3 A2 A1 A0
Data 7
A8 A7 A6 A5 A4 A3 A2 A1 A0
BURST LENGTH
BL = 2
BL = 4
BL = 8
Publication Release Date: Sep. 01, 2014
Revision: A02
-9-
W9825G6KH
7.14 Auto-precharge Command
If A10 is set to high when the Read or Write Command is issued, then the Auto-precharge function is
entered. During Auto-precharge, a Read Command will execute as normal with the exception that the
active bank will begin to precharge automatically before all burst read cycles have been completed.
Regardless of burst length, it will begin a certain number of clocks prior to the end of the scheduled
burst cycle. The number of clocks is determined by CAS Latency.
A Read or Write Command with Auto-precharge can not be interrupted before the entire burst
operation is completed. Therefore, use of a Read, Write, or Precharge Command is prohibited during
a read or write cycle with Auto-precharge. Once the precharge operation has started, the bank cannot
be reactivated until the Precharge time (tRP) has been satisfied. Issue of Auto-pecharge command is
illegal if the burst is set to full page length. If A10 is high when a Write Command is issued, the Write
with Auto-pecharge function is initiated. The SDRAM automatically enters the precharge operation two
clock delay from the last burst write cycle. This delay is referred to as Write tWR. The bank undergoing
Auto-precharge can not be reactivated until tWR and tRP are satisfied. This is referred to as tDAL, Data-in
to Active delay (tDAL = tWR + tRP). When using the Auto-precharge Command, the interval between the
Bank Activate Command and the beginning of the internal precharge operation must satisfy tRAS (min).
7.15 Precharge Command
The Precharge Command is used to precharge or close a bank that has been activated. The
Precharge Command is entered when CS , RAS and WE are low and CAS is high at the rising
edge of the clock. The Precharge Command can be used to precharge each bank separately or all
banks simultaneously. Three address bits A10, BS0 and BS1 are used to define which bank(s) is to be
precharged when the command is issued. After the Precharge Command is issued, the precharged
bank must be reactivated before a new read or write access can be executed. The delay between the
Precharge Command and the Activate Command must be greater than or equal to the Precharge time
(tRP).
7.16 Self Refresh Command
The Self Refresh Command is defined by having CS , RAS , CAS and CKE held low with WE
high at the rising edge of the clock. All banks must be idle prior to issuing the Self Refresh Command.
Once the command is registered, CKE must be held low to keep the device in Self Refresh mode.
When the SDRAM has entered Self Refresh mode all of the external control signals, except CKE, are
disabled. The clock is internally disabled during Self Refresh Operation to save power. The device will
exit Self Refresh operation after CKE is returned high. Any subsequent commands can be issued after
tXSR from the end of Self Refresh Command.
If, during normal operation, AUTO REFRESH cycles are issued in bursts (as opposed to being evenly
distributed), a burst of 8,192 AUTO REFRESH cycles should be completed just prior to entering and
just after exiting the self refresh mode.
Publication Release Date: Sep. 01, 2014
Revision: A02
- 10 -
W9825G6KH
7.17 Power Down Mode
The Power Down mode is initiated by holding CKE low. All of the receiver circuits except CKE are
gated off to reduce the power. The Power Down mode does not perform any refresh operations,
therefore the device can not remain in Power Down mode longer than the Refresh period (tREF) of the
device.
The Power Down mode is exited by bringing CKE high. When CKE goes high, a No Operation
Command is required on the next rising clock edge, depending on tCK. The input buffers need to be
enabled with CKE held high for a period equal to tCKS (min) + tCK (min).
7.18 No Operation Command
The No Operation Command should be used in cases when the SDRAM is in a idle or a wait state to
prevent the SDRAM from registering any unwanted commands between operations. A No Operation
Command is registered when CS is low with RAS , CAS and WE held high at the rising edge of
the clock. A No Operation Command will not terminate a previous operation that is still executing, such
as a burst read or write cycle.
7.19 Deselect Command
The Deselect Command performs the same function as a No Operation Command. Deselect
Command occurs when CS is brought high, the RAS , CAS and WE signals become don't
cares.
7.20 Clock Suspend Mode
During normal access mode, CKE must be held high enabling the clock. When CKE is registered low
while at least one of the banks is active, Clock Suspend Mode is entered. The Clock Suspend mode
deactivates the internal clock and suspends any clocked operation that was currently being executed.
There is a one clock delay between the registration of CKE low and the time at which the SDRAM
operation suspends. While in Clock Suspend mode, the SDRAM ignores any new commands that are
issued. The Clock Suspend mode is exited by bringing CKE high. There is a one clock cycle delay
from when CKE returns high to when Clock Suspend mode is exited.
Publication Release Date: Sep. 01, 2014
Revision: A02
- 11 -
W9825G6KH
8. OPERATION MODE
Fully synchronous operations are performed to latch the commands at the positive edges of CLK.
Table 1 shows the truth table for the operation commands.
Table 1 Truth Table (Note (1) , (2))
COMMAND
DEICE
STATE
CKEn-1 CKEn
DQM
BS0, 1
A10
A0A9
A11, A12
CS
RAS
CAS
WE
Bank Active
Idle
H
x
x
v
v
v
L
L
H
H
Bank Precharge
Any
H
x
x
v
L
x
L
L
H
L
Precharge All
Any
H
x
x
x
H
x
L
L
H
L
Write
Active
(3)
H
x
x
v
L
v
L
H
L
L
Write with Autoprecharge
Active (3)
H
x
x
v
H
v
L
H
L
L
Read
Active (3)
H
x
x
v
L
v
L
H
L
H
Read with Autoprecharge
Active (3)
H
x
x
v
H
v
L
H
L
H
Idle
H
x
x
v
v
v
L
L
L
L
Mode Register Set
No-operation
Any
H
x
x
x
x
x
L
H
H
H
Active (4)
H
x
x
x
x
x
L
H
H
L
Device Deselect
Any
H
x
x
x
x
x
H
x
x
x
Auto-refresh
Idle
H
H
x
x
x
x
L
L
L
H
Self-refresh Entry
Idle
H
L
x
x
x
x
L
L
L
H
Self-refresh Exit
Idle
(S.R.)
L
L
H
H
x
x
x
x
x
x
x
x
H
L
x
H
x
H
x
x
Clock Suspend Mode
Entry
Active
H
L
x
x
x
x
x
x
x
x
Idle
Active (5)
H
H
L
L
x
x
x
x
x
x
x
x
H
L
x
H
x
H
x
x
Active
L
H
x
x
x
x
x
x
x
x
Any
(Power Down)
L
L
H
H
x
x
x
x
x
x
x
x
H
L
x
H
x
H
x
x
Data Write/Output
Enable
Active
H
x
L
x
x
x
x
x
x
x
Data Write/Output
Disable
Active
H
x
H
x
x
x
x
x
x
x
Burst Stop
Power Down Mode
Entry
Clock Suspend Mode
Exit
Power Down Mode
Exit
Notes:
(1) v = valid
x = Don't care
L = Low Level H = High Level
(2) CKEn signal is input level when commands are provided.
CKEn-1 signal is the input level one clock cycle before the command is issued.
(3) These are state of bank designated by BS0, BS1 signals.
(4) Device state is full page burst operation.
(5) Power Down Mode can not be entered in the burst cycle.
When this command asserts in the burst cycle, device state is clock suspend mode.
Publication Release Date: Sep. 01, 2014
Revision: A02
- 12 -
W9825G6KH
9. ELECTRICAL CHARACTERISTICS
9.1 Absolute Maximum Ratings
PARAMETER
SYMBOL
RATING
UNIT
NOTES
Voltage on any pin relative to VSS
VIN, VOUT
-0.5 ~ VDD + 0.5 (≤ 4.6V max.)
V
1
Voltage on VDD/VDDQ supply relative to VSS
VDD, VDDQ
-0.5 ~ 4.6
V
1
Operating Temperature for -5/-6/-6L/-75/75L
TOPR
0 ~ 70
°C
1
Operating Temperature for-5I/-6I
TOPR
-40 ~ 85
°C
1
Storage Temperature
TSTG
-55 ~ 150
°C
1
TSOLDER
260
°C
1
PD
1
W
1
IOUT
50
mA
1
Soldering Temperature (10s)
Power Dissipation
Short Circuit Output Current
Note:
1. Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of
the device
9.2
Recommended DC Operating Conditions
PARAMETER
Power Supply Voltage
SYMBOL
MIN.
TYP.
MAX.
UNIT
NOTES
VDD
3.0
3.3
3.6
V
VDDQ
3.0
3.3
3.6
V
Input High Voltage
VIH
2.0
-
VDD + 0.3
V
1
Input Low Voltage
VIL
-0.3
-
0.8
V
2
Output logic high voltage
VOH
2.4
-
-
V
IOH= -2mA
Output logic low voltage
VOL
-
-
0.4
V
IOL= 2mA
Input leakage current
II(L)
-5
-
5
µA
3
Output leakage current
IO(L)
-5
-
5
µA
4
I/O Buffer Supply Voltage
Notes:
1. VIH (max.) = VDD/VDDQ+1.5V for pulse width ≤ 5 nS.
2. VIL (min.) = VSS/VSSQ-1.5V for pulse width ≤ 5 nS.
3. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. Output disabled, 0V ≤ VOUT ≤ VDDQ.
Publication Release Date: Sep. 01, 2014
Revision: A02
- 13 -
W9825G6KH
9.3
Capacitance
(VDD = 3.3V ± 0.3V, f = 1 MHz, TA = 25°C)
PARAMETER
SYM.
MIN.
MAX.
UNIT
CI
-
3.8
pf
CCLK
-
3.5
pf
CIO
-
6.5
pf
Input Capacitance
(A0 to A12, BS0, BS1, CS , RAS , CAS , WE , LDQM, UDQM, CKE)
Input Capacitance (CLK)
Input/Output Capacitance (DQ0DQ15)
Note: These parameters are periodically sampled and not 100% tested.
9.4
DC Characteristics
(VDD = 3.3V ± 0.3V, TA = 0 to 70°C for -5/-6/-6L/-75/75L, TA = -40 to 85°C for -5I/-6I)
PARAMETER
SYM.
-5/-5I
-6/-6I
MAX.
MAX.
-6L
-75
75L
MAX. MAX. MAX.
UNIT NOTES
Operating Current
tCK = min., tRC = min.
Active precharge command
cycling without burst operation
1 Bank
operation
IDD1
65
60
60
55
55
3
CKE = VIH
IDD2
30
25
25
20
20
3
IDD2P
2
2
2
2
2
3
IDD2S
12
12
12
12
12
IDD2PS
2
2
2
2
2
Standby Current
tCK = min., CS = VIH
VIH/L = VIH (min.)/VIL (max.)
Bank: Inactive state
CKE = VIL
(Power Down Mode)
Standby Current
CLK = VIL, CS = VIH
VIH/L=VIH (min.)/VIL (max.)
Bank: Inactive state
No Operating Current
tCK = min., CS = VIH(min)
Bank: Active state (4 Banks)
CKE = VIH
CKE = VIL
(Power Down Mode)
CKE = VIH
CKE = VIL
(Power Down Mode)
mA
IDD3
40
35
35
30
30
IDD3P
12
12
12
12
12
IDD4
85
80
80
75
75
3, 4
IDD5
80
75
75
70
70
3
IDD6
2
2
1.5
2
1.5
Burst Operating Current
tCK = min.
Read/ Write command cycling
Auto Refresh Current
tCK = min.
Auto refresh command cycling
Self Refresh Current
Self Refresh Mode
CKE = 0.2V
Publication Release Date: Sep. 01, 2014
Revision: A02
- 14 -
W9825G6KH
9.5
AC Characteristics and Operating Condition
(VDD = 3.3V ± 0.3V, TA = 0 to 70°C for -5/-6/-6L/-75/75L, TA = -40 to 85°C for -5I/-6I)
PARAMETER
SYM.
-5/-5I
MIN.
-6
MAX.
MIN.
-6I/-6L
MAX.
MIN.
-75/75L
MAX.
MIN. MAX.
UNIT NOTES
Ref/Active to Ref/Active Command
Period
tRC
55
Active to precharge Command Period
tRAS
40
Active to Read/Write Command Delay
Time
tRCD
15
15
18
20
Read/Write(a) to Read/Write(b)
Command Period
tCCD
1
1
1
1
tCK
Precharge to Active Command Period
tRP
15
15
18
20
nS
Active(a) to Active(b) Command
Period
tRRD
2
2
2
2
tCK
2
2
2
2
2
2
2
2
Write Recovery Time
CLK Cycle Time
CL* = 2
CL* = 3
CL* = 2
CL* = 3
tWR
tCK
60
100000
42
60
100000
42
65
100000
45
100000
nS
tCK
7.5
1000
7.5
1000
7.5
1000
10
1000
5
1000
6
1000
6
1000
7.5
1000
CLK High Level width
tCH
2
2
2
2.5
8
CLK Low Level width
tCL
2
2
2
2.5
8
Access Time from CLK
CL* = 2
CL* = 3
Output Data Hold Time
Output Data High
Impedance Time
tAC
tOH
CL* = 2
CL* = 3
6
6
6
6
4.5
5
5
5.4
3
tHZ
Output Data Low Impedance Time
tLZ
0
Power Down Mode Entry Time
tSB
0
Transition Time of CLK (Rise and Fall)
tT
3
3
3
9
6
6
6
6
4.5
5
5
5.4
0
5
0
1
0
6
0
1
9
7
0
6
0
1
9
7.5
nS
1
Data-in Set-up Time
tDS
1.5
1.5
1.5
1.5
8
Data-in Hold Time
tDH
1.0
0.8
0.8
1.0
8
Address Set-up Time
tAS
1.5
1.5
1.5
1.5
8
Address Hold Time
tAH
1.0
0.8
0.8
1.0
8
CKE Set-up Time
tCKS
1.5
1.5
1.5
1.5
8
CKE Hold Time
tCKH
1.0
0.8
0.8
1.0
8
Command Set-up Time
tCMS
1.5
1.5
1.5
1.5
8
Command Hold Time
tCMH
1.0
0.8
0.8
1.0
8
Refresh Time (8K Refresh Cycles)
tREF
Mode register Set Cycle Time
tRSC
2
64
2
64
2
64
2
64
mS
tCK
Exit self refresh to ACTIVE command
tXSR
70
72
72
75
nS
* CL = CAS Latency
Publication Release Date: Sep. 01, 2014
Revision: A02
- 15 -
W9825G6KH
Notes:
1. Operation exceeds “Absolute Maximum Ratings” may cause permanent damage to the devices.
2. All voltages are referenced to VSS.
3. These parameters depend on the cycle rate and listed values are measured at a cycle rate with the
minimum values of tCK and tRC.
4. These parameters depend on the output loading conditions. Specified values are obtained with
output open.
5. Power up sequence please refer to “Functional Description” section described before.
6. AC test load diagram.
1.4 V
50 ohms
output
Z = 50 ohms
30pF
AC TEST LOAD
7. tHZ defines the time at which the outputs achieve the open circuit condition and is not referenced to
output level.
8. Assumed input rise and fall time (tT) = 1nS.
If tr & tf is longer than 1nS, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]nS should be added to the parameter.
9. If clock rising time (tT) is longer than 1nS, (tT/2-0.5)nS should be added to the parameter.
Publication Release Date: Sep. 01, 2014
Revision: A02
- 16 -
W9825G6KH
10. TIMING WAVEFORMS
10.1 Command Input Timing
tCK
tCL
tCH
VIH
CLK
VIL
tT
tCMS
tCMH
tCMS
tCMH
tCMS
tCMH
tCMS
tCMH
tAS
tAH
tCMH
tT
tCMS
CS
RAS
CAS
WE
A0-A12
BS0,1
tCKS
tCKH
tCKS
tCKH
tCKS
tCKH
CKE
Publication Release Date: Sep. 01, 2014
Revision: A02
- 17 -
W9825G6KH
10.2 Read Timing
Read CAS Latency
CLK
CS
RAS
CAS
WE
A0-A12
BS0,1
tAC
tLZ
Valid
Data-Out
DQ
Read Command
tHZ
tAC
tOH
tOH
Valid
Data-Out
Burst Length
Publication Release Date: Sep. 01, 2014
Revision: A02
- 18 -
W9825G6KH
10.3 Control Timing of Input/Output Data
Control Timing of Input Data
(Word Mask)
CLK
tCMS
tCMH
tCMH
tCMS
DQM
tDS
tDH
tDS
tDS
Valid
Data-in
Valid
Data-in
DQ0~15
tDH
tDH
tDS
tDH
Valid
Data-in
Valid
Data-in
(Clock Mask)
CLK
tCKH
tCKS
tCKH
tDH
tDS
tDH
tCKS
CKE
tDS
DQ0~15
Valid
Data-in
tDS
Valid
Data-in
tDH
tDS
tDH
Valid
Data-in
Valid
Data-in
Control Timing of Output Data
(Output Enable)
CLK
tCMS
tCMH
tCMH
tCMS
DQM
tAC
tOH
tAC
tLZ
Valid
Data-Out
Valid
Data-Out
DQ0~15
tAC
tHZ
tOH
tOH
tAC
tOH
Valid
Data-Out
OPEN
(Clock Mask)
CLK
tCKS
tCKH
tCKH
tCKS
CKE
DQ0~15
tAC
tAC
tAC
tAC
tOH
tOH
tOH
Valid
Data-Out
Valid
Data-Out
tOH
Valid
Data-Out
Publication Release Date: Sep. 01, 2014
Revision: A02
- 19 -
W9825G6KH
10.4 Mode Register Set Cycle
tRSC
CLK
tCMS
tCMH
tCMS
tCMH
tCMS
tCMH
tCMS
tCMH
tAS
tAH
CS
RAS
CAS
WE
A0-A12
BS0,1
Register
set data
next
command
A0
A1
Burst Length
A2
A3
Addressing Mode
A4
A5
CAS Latency
A2
0
0
0
0
1
1
1
1
A6
A0
A7
"0"
A8
"0"
A10
"0"
A0
A11
"0"
A12
"0"
BS0
"0"
BS1
"0"
A0
A3
0
1
(Test Mode)
Reserved
WriteA0
Mode
A9
A1
A0 A0
A0
0
0
A0
0
1
A0
1
0
A0
1
1
A0
0
0
A0
0
1
A0
1
0
A0
1
1
A6
0
0
0
0
1
Reserved
A5
A0 A4
A0
0
0
A0
0
1
A0
1
0
A0
1
1
A0
0
0
A0
A9
0
1
Burst Length
Sequential
Interleave
1
1
2
2
4
4
8
8
Reserved
Reserved
Full Page
Addressing Mode
Sequential
Interleave
CAS Latency
Reserved
Reserved
2
3
Reserved
Single Write Mode
Burst read and Burst write
Burst read and single write
* "Reserved" should stay "0" during MRS cycle.
Publication Release Date: Sep. 01, 2014
Revision: A02
- 20 -
W9825G6KH
11. OPERATING TIMING EXAMPLE
11.1 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3)
0
1
2
3
4
6
5
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
tRC
tRC
tRC
tRC
RAS
tRAS
tRP
tRP
tRAS
tRAS
tRP
tRAS
CAS
WE
BS0
BS1
tRCD
A10
RAa
A0-A9,
A11,A12
RAa
tRCD
tRCD
RBb
CAw
tRCD
RAc
CBx
RBb
RAe
RBd
RAc
CAy
RBd
CBz
RAe
DQM
CKE
tAC
DQ
tRRD
Bank #0
Active
Bank #1
aw1
aw2
aw3
bx0
tRRD
Read
Precharge
Active
bx1
bx3
bx2
cy0
tRRD
Active
cy1
cy2
cy3
tRRD
Precharge
Read
Precharge
Read
tAC
tAC
tAC
aw0
Active
Active
Read
Bank #2
Idle
Bank #3
Publication Release Date: Sep. 01, 2014
Revision: A02
- 21 -
W9825G6KH
11.2 Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto-precharge)
0
1
2
3
4
5
6
7
8
9
11
10
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
tRC
tRC
tRC
tRC
RAS
tRAS
tRP
tRAS
tRP
tRAS
tRP
CAS
WE
BS0
BS1
tRCD
A10
A0-A9,
A11,A12
tRCD
tRCD
RAa
RBb
RAa
CAw RBb
tRCD
RBd
RAc
CBx
RAc
RAe
RBd
CAy
CBz
RAe
DQM
CKE
tAC
DQ
tRRD
Bank #0
Active
Bank #1
aw1
aw2
aw3
bx0
bx1
tRRD
Read
Active
tAC
tAC
tAC
aw0
bx2
bx3
cy0
cy1
tRRD
Active
AP*
cy3
dz0
tRRD
Read
AP*
Read
cy2
Active
AP*
Active
Read
Bank #2
Idle
Bank #3
* AP is the internal precharge start timing
Publication Release Date: Sep. 01, 2014
Revision: A02
- 22 -
W9825G6KH
11.3 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
tRC
RAS
tRAS
tRP
tRAS
tRP
CAS
WE
BS0
BS1
tRCD
A10
tRCD
RBb
RAa
A0-A9,
A11,A12
RAa
tRCD
CAx
RAc
RBb
RAc
CBy
CAz
DQM
CKE
tAC
DQ
tAC
ax0
ax1
tRRD
Bank #0
Active
Bank #1
ax2
ax3
ax4
ax5
by0
by4
by1
by5
by6
by7
CZ0
tRRD
Read
Precharge
ax6
tAC
Precharge
Active
Read
Active
Read
Precharge
Bank #2
Idle
Bank #3
Publication Release Date: Sep. 01, 2014
Revision: A02
- 23 -
W9825G6KH
11.4 Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto-precharge)
0
1
2
3
4
6
5
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
tRC
CS
RAS
tRAS
tRP
tRAS
tRAS
tRP
CAS
WE
BS0
BS1
tRCD
A10
RAa
A0-A9,
A11,A12
RAa
tRCD
tRCD
RAc
RBb
CAx
CBy
RBb
RAc
CAz
DQM
CKE
tAC
DQ
ax0
ax1
ax2
Active
ax4
ax5
AP*
Read
Active
Bank #1
ax3
ax6
ax7
by0
by1
by4
Active
Read
by5
by6
CZ0
tRRD
tRRD
Bank #0
tAC
tAC
Read
AP*
Bank #2
Idle
Bank #3
* AP is the internal precharge start timing
Publication Release Date: Sep. 01, 2014
Revision: A02
- 24 -
W9825G6KH
11.5 Interleaved Bank Write (Burst Length = 8)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
tRC
RAS
tRAS
tRP
tRAS
CAS
tRCD
tRCD
tRCD
WE
BS0
BS1
A10
A0-A9,
A11,A12
RBb
RAa
RAa
CAx
RAc
CBy
RBb
RAc
CAz
DQM
CKE
DQ
ax0
ax1
ax4
ax5
ax6
ax7
by0
by1
tRRD
Bank #0
Active
Bank #1
Bank #2
Bank #3
by2
by3
by4
by5
by6
by7
CZ0
CZ1
CZ2
tRRD
Precharge
Write
Active
Write
Active
Write
Precharge
Idle
Publication Release Date: Sep. 01, 2014
Revision: A02
- 25 -
W9825G6KH
11.6 Interleaved Bank Write (Burst Length = 8, Auto-precharge)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
tRC
RAS
tRP
tRAS
tRAS
CAS
WE
BS0
BS1
tRCD
A10
A0-A9,
A11,A12
tRCD
RAa
RAa
tRCD
RBb
CAx
RAb
CBy
RBb
RAc
CAz
DQM
CKE
ax0
DQ
ax1
ax4
ax5
ax6
ax7
by0
by1
AP*
Write
Active
Bank #1
by3
by4
by5
by6
by7
CZ0
CZ1
CZ2
tRRD
tRRD
Bank #0 Active
by2
Write
Active
Write
AP*
Bank #2
Idle
Bank #3
* AP is the internal precharge start timing
Publication Release Date: Sep. 01, 2014
Revision: A02
- 26 -
W9825G6KH
11.7 Page Mode Read (Burst Length = 4, CAS Latency = 3)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
tCCD
tCCD
tCCD
CS
tRAS
tRAS
RAS
CAS
WE
BS0
BS1
tRCD
A10
RAa
A0-A9,
A11,A12
RAa
tRCD
RBb
CAI
RBb
CBx
CAy
CAm
CBz
DQM
CKE
DQ
a0
a1
a2
a3
tAC
tAC
tAC
tAC
bx0
bx1
tAC
Ay0
Ay1
Ay2
am0
am1
am2
bz0
bz1
bz2
bz3
tRRD
Bank #0
Active
Read
Active
Bank #1
Read
Read
Read
Precharge
Read
AP*
Bank #2
Idle
Bank #3
* AP is the internal precharge start timing
Publication Release Date: Sep. 01, 2014
Revision: A02
- 27 -
W9825G6KH
11.8 Page Mode Read / Write (Burst Length = 8, CAS Latency = 3)
0
1
2
3
5
4
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
tRAS
RAS
CAS
WE
BS0
BS1
tRCD
A10
RAa
A0-A9,
A11,A12
RAa
CAx
CAy
DQM
CKE
tAC
DQ
tWR
ax0
Q Q
Bank #0
Active
ax1
ax3
ax2
Q
Q
ax5
ax4
Q
Q
Read
ay1
ay0
D
D
Write
ay2
D
ay3
D
ay4
D
Precharge
Bank #1
Bank #2
Bank #3
Idle
Publication Release Date: Sep. 01, 2014
Revision: A02
- 28 -
W9825G6KH
11.9 Auto-precharge Read (Burst Length = 4, CAS Latency = 3)
0
1
2
3
4
6
5
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
tRC
RAS
tRAS
tRP
tRAS
CAS
WE
BS0
BS1
tRCD
A10
tRCD
RAa
A0-A9,
A11,A12
RAa
RAb
CAw
RAb
CAx
DQM
CKE
tAC
DQ
tAC
aw0
Bank #0
Active
Read
aw1
aw2
aw3
AP*
bx0
Active
Read
bx1
bx2
bx3
AP*
Bank #1
Bank #2
Idle
Bank #3
* AP is the internal precharge start timing
Publication Release Date: Sep. 01, 2014
Revision: A02
- 29 -
W9825G6KH
11.10 Auto-precharge Write (Burst Length = 4)
0
1
2
3
6
5
4
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
tRC
tRC
RAS
tRAS
tRP
tRAS
tRP
CAS
WE
BS0
BS1
tRCD
tRCD
A10
RAb
RAa
A0-A9,
A11,A12
RAa
CAw
RAb
RAc
CAx
RAc
DQM
CKE
DQ
aw0
Active
Bank #0
Write
aw1
aw2
aw3
bx0
AP*
Active
Write
bx1
bx2
bx3
AP*
Active
Bank #1
Bank #2
Idle
* AP is the internal precharge start timing
Bank #3
Publication Release Date: Sep. 01, 2014
Revision: A02
- 30 -
W9825G6KH
11.11 Auto Refresh Cycle
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
tRP
tRC
tRC
CS
RAS
CAS
WE
BS0,1
A10
A0-A9,
A11,A12
DQM
CKE
DQ
All Banks
Prechage
Auto
Refresh
Auto Refresh (Arbitrary Cycle)
Publication Release Date: Sep. 01, 2014
Revision: A02
- 31 -
W9825G6KH
11.12 Self Refresh Cycle
CLK
CS
tRP
RAS
CAS
WE
BS0,1
A10
A0-A9,
A11,A12
DQM
tCKS
tSB
CKE
tCKS
DQ
tXSR
Self Refresh Cycle
All Banks
Precharge
Self Refresh
Entry
No Operation / Command Inhibit
Self Refresh
Exit
Arbitrary Cycle
Publication Release Date: Sep. 01, 2014
Revision: A02
- 32 -
W9825G6KH
11.13 Burst Read and Single Write (Burst Length = 4, CAS Latency = 3)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
RAS
CAS
t RCD
WE
BS0
BS1
A10
A0-A9,
A11,A12
RBa
RBa
CBv
CBw
CBx
CBy
CBz
aw0
ax0
ay0
az0
az1
az2
az3
D
D
D
Q
Q
Q
Q
DQM
CKE
tAC
tAC
DQ
Bank #0
Active
av0
av1
av2
av3
Q
Q
Q
Q
Read
Single Write Read
Bank #1
Bank #2
Idle
Bank #3
Publication Release Date: Sep. 01, 2014
Revision: A02
- 33 -
W9825G6KH
11.14 Power Down Mode
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
CLK
CS
RAS
CAS
WE
BS
A10
A0-A9,
A11,A12
RAa
RAa
RAa
CAa
RAa
CAx
DQM
tSB
tSB
CKE
tCKS
tCKS
ax0
Active
tCKS
tCKS
DQ
ax1
ax2
NOP Read
ax3
Precharge
NOP Active
Precharge Standby
Power Down mode
Active Standby
Power Down mode
Note: The PowerDown Mode is entered by asserting CKE "low".
All Input/Output buffers (except CKE buffers) are turned off in the Power Down mode.
When CKE goes high, command input must be No operation at next CLK rising edge.
Violating refresh requirements during power-down may result in a loss of data.
Publication Release Date: Sep. 01, 2014
Revision: A02
- 34 -
W9825G6KH
11.15 Auto-precharge Timing (Read Cycle)
0
1
Read
AP
2
3
4
5
6
7
8
Q5
Q6
9
10
11
(1) CAS Latency=2
( a ) burst length = 1
Command
Act
tRP
DQ
Q0
( b ) burst length = 2
Command
Read
AP
Act
tRP
DQ
Q0
Q1
( c ) burst length = 4
Command
Read
AP
Act
tRP
DQ
Q0
Q1
Q2
Q3
Q0
Q1
Q2
Q3
( d ) burst length = 8
Command
Read
AP
DQ
Q4
Act
tRP
Q7
(2) CAS Latency=3
( a ) burst length = 1
Command
Read
AP
Act
tRP
Q0
DQ
( b ) burst length = 2
Command
Read
AP
Act
tRP
Q0
DQ
Q1
( c ) burst length = 4
Command
Read
AP
Act
tRP
Q0
DQ
Q1
Q2
Q3
( d ) burst length = 8
Command
Read
AP
Act
tRP
Q0
DQ
Q1
Q2
Q3
Q4
Q5
Q6
Q7
Note:
Read
AP
Act
represents the Read with Auto precharge command.
represents the start of internal precharging.
represents the Bank Activ ate command.
When the Auto precharge command is asserted, the period f rom Bank Activ ate command to
the start of internal precgarging must be at leastRAS
t (min).
Publication Release Date: Sep. 01, 2014
Revision: A02
- 35 -
W9825G6KH
11.16 Auto-precharge Timing (Write Cycle)
0
1
2
3
4
5
6
7
8
9
10
11
12
CLK
(1) CAS Latency = 2
(a) burst length = 1
Command
Write
AP
tWR
DQ
Act
tRP
D0
(b) burst length = 2
Command
Write
AP
Act
tWR
DQ
D0
tRP
D1
(c) burst length = 4
Command
AP
Write
DQ
D0
D1
D2
Act
tRP
tWR
D3
(d) burst length = 8
Command
Write
AP
tWR
DQ
D0
D1
D2
D3
D4
D5
D6
Act
tRP
D7
(2) CAS Latency = 3
(a) burst length = 1
Command
Write
AP
Act
tWR
DQ
(b) burst length = 2
Command
tRP
D0
Write
AP
Act
tWR
DQ
D0
tRP
D1
(c) burst length = 4
Command
Write
AP
Act
tWR
DQ
D0
D1
D2
tRP
D3
(d) burst length = 8
Command
Write
AP
tWR
DQ
D0
D1
D2
D3
D4
D5
D6
Act
tRP
D7
Note )
Write
represents the Write with Auto precharge command.
AP
represents the start of internal precharing.
Act
represents the Bank Active command.
When the /auto precharge command is asserted,the period from Bank Activate
command to the start of intermal precgarging must be at least tRAS (min).
Publication Release Date: Sep. 01, 2014
Revision: A02
- 36 -
W9825G6KH
11.17 Timing Chart of Read to Write Cycle
In the case of Burst Length = 4
1
0
2
3
4
5
6
D1
D2
D3
D0
D1
D2
D1
D2
D3
D1
D2
7
8
9
10
11
(1) CAS Latency=2
Read
( a ) Command
Write
DQM
DQ
D0
( b ) Command
Read
Write
DQM
DQ
(2) CAS Latency=3
Read
( a ) Command
D3
Write
DQM
D0
DQ
Read
( b ) Command
Write
DQM
D0
DQ
D3
Note: The Output data must be masked by DQM to avoid I/O conflict.
11.18 Timing Chart of Write to Read Cycle
In the case of Burst Length=4
0
1
2
3
4
5
6
7
8
Q0
Q1
Q2
Q3
Q0
Q1
Q2
Q3
Q0
Q1
Q2
Q3
Q0
Q1
Q2
9
10
11
(1) CAS Latency=2
( a ) Command
Write Read
DQM
DQ
( b ) Command
D0
Read
Write
DQM
DQ
D0
D1
(2) CAS Latency=3
( a ) Command
Write Read
DQM
DQ
( b ) Command
D0
Write
Read
DQM
DQ
D0
D1
Q3
Publication Release Date: Sep. 01, 2014
Revision: A02
- 37 -
W9825G6KH
11.19 Timing Chart of Burst Stop Cycle (Burst Stop Command)
0
1
2
3
4
5
6
7
8
9
10
11
(1) Read cycle
( a ) CAS latency =2
C omma nd
Read
BST
Q0
DQ
Q1
Q2
Q0
Q1
Q3
Q4
( b )CAS latency = 3
C omma nd
Read
BST
DQ
Q2
Q3
Q4
(2) Write cycle
C omma nd
Write
Q0
DQ
BST
Q1
Q2
Note:
Q3
Q4
BST
represents the Burst stop command
11.20 Timing Chart of Burst Stop Cycle (Precharge Command)
0
1
2
3
4
5
6
7
8
9
10
11
(1) Read cycle
(a) CAS latency =2
Command
Read
PRCG
DQ
(b) CAS latency =3
Command
Q0
Q1
Q2
Read
Q3
Q4
PRCG
DQ
Q0
Q1
Q2
Q3
Q4
(2) Write cycle
Command
PRCG
Write
tWR
DQM
DQ
Q0
Q1
Q2
Q3
Q4
Publication Release Date: Sep. 01, 2014
Revision: A02
- 38 -
W9825G6KH
11.21 CKE/DQM Input Timing (Write Cycle)
CLK cycle No.
1
2
3
D1
D2
D3
4
5
6
7
External
CLK
Internal
CKE
DQM
DQ
D5
DQM MASK
D6
CKE MASK
( 1)
CLK cycle No.
1
2
3
D1
D2
D3
4
5
6
7
External
CLK
Internal
CKE
DQM
DQ
DQM MASK
D5
D6
5
6
7
D4
D5
D6
CKE MASK
( 2)
CLK cycle No.
1
2
3
D1
D2
D3
4
External
CLK
Internal
CKE
DQM
DQ
CKE MASK
( 3)
Publication Release Date: Sep. 01, 2014
Revision: A02
- 39 -
W9825G6KH
11.22 CKE/DQM Input Timing (Read Cycle)
CLK cycle No.
1
2
3
4
Q1
Q2
Q3
Q4
6
5
7
External
CLK
Internal
CKE
DQM
DQ
Q6
Open
Open
(1)
CLK cycle No.
1
2
3
Q1
Q2
Q3
4
5
6
7
External
CLK
Internal
CKE
DQM
DQ
Q4
Q6
Open
(2)
CLK cycle No.
1
2
Q1
Q2
3
4
5
6
7
Q4
Q5
Q6
External
CLK
Internal
CKE
DQM
DQ
Q3
(3)
Publication Release Date: Sep. 01, 2014
Revision: A02
- 40 -
W9825G6KH
12. PACKAGE SPECIFICATION
Package Outline 54L TSOP (II)-400 mil
54
28
E1
1
E
27
DETAIL “A”
e
b
RAD. R1
D
ZD
RAD. R
A2
A1
Y
SEATING PLANE
A
C θ
θ1
L
L1
DETAIL “A”
Controlling Dimension : Millimeters
DIMENSION
(MM)
SYMBOL
DIMENSION
(INCH)
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
---
---
0.15
0.002
-----
0.047
0.05
-----
1.20
A1
A2
0.95
1.00
1.05
0.037
0.039
0.041
b
0.30
0.45
0.012
0.12
0.21
0.005
-----
0.018
c
-----
D
22.09
22.22
22.35
0.870
0.875
0.880
E
11.56
11.76
11.96
0.455
0.463
0.471
E1
10.03
10.16
10.29
0.395
0.400
0.405
e
L
0.80 BASIC
0.40
L1
0.50
R
0.12
0.12
-----
0.60
0.016
0.020
0.024
0.031 BASIC
0.25
0.005
---
0.005
-----
0.010
---
0.028 REF
0.71 REF
ZD
0.008
0.031 BASIC
0.80 BASIC
R1
0.006
θ
θ1
0°
---
8°
0°
---
8°
10°
15°
20°
10°
15°
20°
Y
---
---
0.10
---
---
0.004
Publication Release Date: Sep. 01, 2014
Revision: A02
- 41 -
W9825G6KH
13. REVISION HISTORY
VERSION
DATE
PAGE
DESCRIPTION
A01
Jul. 02, 2014
All
Initial formally datasheet
3
Update section 3 order information
Revise -5/-5I speed grades tAC parameter value
A02
Sep. 01, 2014
15
Revise -5/-5I/-6/-6I/-6L speed grades tHZ parameter value
Revise -5/-5I/-6/-6I/-6L speed grades tSB parameter value
Important Notice
Winbond products are not designed, intended, authorized or warranted for use as components
in systems or equipment intended for surgical implantation, atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal
instruments, combustion control instruments, or for other applications intended to support or
sustain life. Further more, Winbond products are not intended for applications wherein failure
of Winbond products could result or lead to a situation wherein personal injury, death or
severe property or environmental damage could occur.
Winbond customers using or selling these products for use in such applications do so at their
own risk and agree to fully indemnify Winbond for any damages resulting from such improper
use or sales.
Publication Release Date: Sep. 01, 2014
Revision: A02
- 42 -
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