2SB1016

2SB1016 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ! Complement to 2SD1407 ABSOLUTE MAXIMUM RATINGS (TA=25℃) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -100 -100 -5 -3 25 150 -50~150 Unit V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TA=25℃) Characteristic Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Current Gain Bandwidth Product Symbol ICBO IEBO hFE1 VCE(sat) fT Test Condition VCB= -150V , IE=0 VEB= -5V , IC=0 VCE= -5.0V ,IC=-1.0A IC=-4A ,IB=-0.4mA VCE= -10V ,IC=-0.5A Min Typ Max -10 -10 100 -2.0 60 V MHZ Unit µA µA Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com