2SB507

2SB507 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD313 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25°c) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -60 -60 -7 -3 30 150 -50~150 Unit V V V A W 25°c 25°c ELECTRICAL CHARACTERISTICS (Ta=25°C) Characterristic Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Current Gain Bandwidth Product Symbol ICBO IEBO hFE1 VCE(sat) fT Test Condition VCB= -60V , IE=0 VEB= -7V , IC=0 VCE= -2V , IC=-1A IC=-2A , IB=-0.2A VCE=- 5V , IC=-0.5A Min Typ Max -100 -100 320 -1.0 Unit µA µA V MHZ 40 8 Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com