2SB633

2SB633 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD613 ABSOLUTE MAXIMUM RATINGS (TA=25℃) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -100 -85 -5 -6 40 150 -50~150 Unit V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TA=25℃) Characteristic Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Current Gain Bandwidth Product Symbol ICBO IEBO hFE1 VCE(sat) fT Test Condition VCB= -100V , IE=0 VEB=- 5V , IC=0 VCE= -5V , IC=-1A IC=-4A , IB=-0.4A VCE= -2V , IC=-0.5A Min Typ Max -10 10 320 -2.0 8 Unit µA µA 40 V MHZ Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com