2SD1911

2SD1911 GENERAL DESCRIPTION Silicon Diffused Power Transistor Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL TO-3PFM CONDITIONS VBE = 0V TYP VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time Tmb 25 IC = 4.0A; IB = 0.8A f = 16KHz IF = 4.5A ICsat = 4.0A; f = 16KHz 4.5 1.6 MAX 1500 600 5 10 50 5 2.0 1.0 UNIT V V A A W V A V s LIMITING VALUES SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V Tmb 25 MIN -65 - MAX 1500 600 5 10 50 150 150 UNIT V V A A A A W ELECTRICAL CHARACTERISTICS SYMBOL ICE ICES VCEOsust VCEsat VBEsat hFE VF fT Cc ts tf PARAMETER Collector cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltages Base-emitter satuation voltage DC current gain Diode forward voltage Transition frequency at f = 5MHz Collector capacitance at f = 1MHz Switching times(16KHz line deflecton circuit) Turn-off storage time Turn-off fall time CONDITIONS VBE = 0V; VCE = VCESMmax VBE = 0V; VCE = VCESMmax Tj = 125 IB = 0A; IC = 100mA L = 25mH IC = 4.0A; IB = 0.8A IC = 4.0A; IB = 0.8A IC = 1.0A; VCE = 5V IF = 4.5A IC = 0.1A; VCE = 10V VCB = 10V Ic=4A,IB(end)=0.8A,VCC=105V Ic=4A,IB(end)=0.8A,VCC=105V TYP 8 1.6 3 110 0.7 MAX 1.0 2.5 UNIT mA mA V 5.0 1.5 2.0 1.0 V V V MHz pF s s Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com