2SD288

2SD288 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER * TO-220 ABSOLUTE MAXIMUM RATINGS (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25oC) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 80 55 5 3 20 150 -50~150 Unit V V V A W C C o o ELECTRICAL CHARACTERISTICS (TA=25oC) Characteristic Collector Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Current Gain Bandwidth Product Symbol ICBO hFE1 VCE(sat) Test Condition VCB= 50V , IE=0 VCE= 5V , IC=0.5A IC=1A , IB=0.1A 40 Min Typ Max 50 240 1.0 Unit µA V Wing Shing Computer Components Co., (H.K)Ltd. Homepage: http:/ /www.wingshing.com TeL(852)2341 9276 Fax:(852)2797 8153 . e_ mail:ws@wingshing.com