C3039

2SC3039 GENERAL DESCRIPTION Silicon Epitaxial Planar Transistor Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA SYMBOL TO-220 CONDITIONS VBE = 0V TYP VCESM VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time Tmb 25 IC = 3.0A; IB = 0.3A IF = 3.0A IC=3A,IB1=-IB2=0.3A,VCC=60V 1.5 0.4 MAX 500 300 7 50 2 2.0 1.0 UNIT V V A A W V V s LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V MIN -55 - Tmb 25 MAX 500 300 5 7 2 50 150 150 UNIT V V V A A W ELECTRICAL CHARACTERISTICS SYMBOL ICBO IEBO V(BR)CEO VCEsat hFE fT Cc ton ts tf PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltages DC current gain Transition frequency at f = 5MHz Collector capacitance at f = 1MHz On times Tum-off storage time Fall time CONDITIONS VCB=400V VEB=5V IC=1mA IC = 2.0A; IB = 0.5A IC = 0.8A; VCE = 5V IC = 1A; VCE = 12V VCB = 10V IC=3A,IB1=-IB2=0.3A,VCC=60V IC=3A,IB1=-IB2=0.3A,VCC=60V IC=3A,IB1=-IB2=0.3A,VCC=60V TYP 300 15 25 120 MAX 0.2 0.2 2 100 1.0 2.5 1.0 UNIT mA mA V V MHz pF us us us 0.4 Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com