K2611B

K2611B Silicon N-Channel MOSFET Features ■ 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 72nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction Temperature Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1) Parameter Value 900 11 7 45.6 ±30 1000 30 4.0 300 2.38 150 -55~150 300 Units V A A A V mJ mJ V/ ns W W/℃ ℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Junction-to -Ambient Value Min - Typ - Max 0.42 40 Units ℃/W ℃/W Rev.A Nov.2011 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. K2611B Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Symbol IGSS V(BR)GSS Test Condition VGS=±30V,VDS=0V IG=±10 µA,VDS=0V VDS=900V,V GS=0V Min ±30 - Type - Max ±100 10 100 Unit nA V µA µA V V Ω S Drain cut -off current IDSS VDS=720V,Tc=125℃ Drain -source breakdown voltage Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Turn-on Rise time Turn-on Delay time Switching time Turn-on Fall time Turn-off Delay time Total gate charge(gate-source V(BR)DSS VGS(th) RDS(ON) gfs Ciss Crss Coss tr td(on) tf td(off) ID=250µA,VGS=0V VDS=VGS,ID=250µA VGS=10V,ID=5.5A VDS=50V,ID=5.5A VDS=25V, VGS=0V, f=1MHz VDD=450V, ID=11 A RG=25Ω (Note4,5) VDD=720V, 900 3.0 - 0.95 12 2700 30 260 135 65 90 165 5.0 1.10 3500 40 340 280 140 pF ns 190 340 Qg plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd VGS=10V, ID=11 A (Note4,5) - 72 94 nC - 16 35 - Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR=11 A,VGS=0V IDR=11 A,VGS=0V, dIDR / dt =100 A / µs Min - Type 850 11.2 Max 11 45 1.4 - Unit A A V ns µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=15mH IAS=11 A,VDD=50V,R G=25Ω,Starting TJ=25℃ 3.ISD≤11 A,di/dt≤200A/us,VDD