K2611SB

K2611SB Silicon N-Channel MOSFET Features ■ 9A,900V, RDS(on)(Max1.35Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 58nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1) Parameter Value 900 9 5.7 27 ±30 663 15 4.5 276 2.22 -55~150 300 Units V A A A V mJ mJ V/ ns W W/℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Junction-to -Ambient Value Min - Typ - Max 0.45 40 Units ℃/W ℃/W Rev.A Oct.2010 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. K2611SB Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut -off current Drain -source breakdown voltage Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source Qg plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd VGS=10V, nC ID=9A (Note4,5) 32 26 tf toff VDD=400V, 58 RG=100Ω (Note4,5) 20 95 - Symbol IGSS V(BR)GSS IDSS V(BR)DSS VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton Test Condition VGS=±30V,VDS=0V IG=±10 µA,VDS=0V VDS=720V,V GS=0V ID=10mA,VGS=0V VDS=10V,ID=1mA VGS=10V,ID=4.5A VDS=15V,ID=4.5A VDS=25V, VGS=0V, f=1MHz VDD=400V, ID=9A Min ±30 900 3 3.0 - Type 1.1 7.0 2040 45 190 25 60 Max ±10 100 5 1.35 - Unit nA V µA V V Ω S pF ns Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR=9A,VGS=0V IDR=9A,VGS=0V, dIDR / dt =100 A / µs Min - Type 1.6 20 Max 9 27 1.4 - Unit A A V ns µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=15mH IAS=9A,VDD=90V,R G=25Ω,Starting TJ=25℃ 3.ISD≤9A,di/dt≤200A/us,VDD