K2837

K2837 Silicon N-Channel MOSFET Features ■ 24A,500V,RDS(on)(Max0.19Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 90nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS techno log y. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EA S EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt To tal Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1) Parameter Value 500 24 15.2 96 ±30 1100 29 4.5 271 2.22 -55~150 300 Units V A A A V mJ mJ V / ns W W/℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Junction-to -Ambient Value Min - Typ - Max 0.46 40 Units ℃/ W ℃/ W Rev.A Aug.2010 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. K2837 Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut -off current Drain -source breakdown voltage Breakdown voltage Temperature coefficient Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Tota l gate charge(gate-source Qg plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd tf toff VDD=400V, VGS=10V, ID=18A (Note4,5) Symbol IGSS V(BR)GSS IDSS V(BR)DSS △BVDSS/ △TJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton Tes t Condition VGS=±25V,V DS=0V IG=±10 µA,VDS=0V VDS=500V,VGS=0V VDS=400V,Tc=125℃ ID=10 mA,VGS=0V ID=250µA,Referenced to 25℃ VDS=10V,ID=1mA VGS=10V,ID=9A VDS=40V,ID=9A VDS=25V, VGS=0V, f=1MHz VDD=250V, ID=18A RG=25Ω (Note4,5) Min ±30 - Type - Max ±100 1 10 Unit nA V µA 500 3.0 - 0.53 0.16 22 3500 55 520 250 80 155 200 90 23 44 5.0 0.19 4500 70 670 500 170 V V/℃ V Ω S pF ns 320 400 120 nC - Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Tes t Condition IDR=24A,VGS=0V IDR=24A,VGS=0V, dIDR / dt =100 A / µs Min - Type 400 4.3 Max 24 96 1.4 - Unit A A V ns µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=3.4mH IAS=24A,VDD=50V,R G=25Ω,Starting TJ=25℃ 3.ISD≤24A,di/dt≤200A/us,VDD