K2837B

K2837B Silicon N-Channel MOSFET Features ■ 24A,500V,RDS(on)(Max0.19Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 90nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100℃) IDM VGS EAS EAR dv/dt PD TJ Tstg TL Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction Temperature Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1) 15.2 96 ±30 1100 29 4.5 271 2.22 150 -55~150 300 A A V mJ mJ V / ns W W/℃ ℃ ℃ ℃ Drain Source Voltage Continuous Drain Current(@Tc=25℃) Parameter Value 500 24 Units V A Thermal Characteristics Symbol RQJC RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Junction-to -Ambient Value Min - Typ - Max 0.46 40 Units ℃/ W ℃/ W Rev.A Nov.2011 Copyright@W inSemi M icroelectronics Co., Ltd., All right reserved. K2837B Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut -off current Drain -source breakdown voltage Breakdown voltage Temperature coefficient Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Tota l gate charge(gate-source Qg plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd VGS=10V, ID=18A (Note4,5) nC 23 44 tf toff VDD=400V, 90 120 Symbol IGSS V(BR)GSS IDSS V(BR)DSS △BVDSS/ △TJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton Test Condition VGS=±25V,VDS=0V IG=±10 µA,VDS=0V VDS=500V,VGS=0V VDS=400V,Tc=125℃ ID=10 mA,VGS=0V ID=250µA,Referenced to 25℃ VDS=10V,ID=1mA VGS=10V,ID=9A VDS=40V,ID=9A VDS=25V, VGS=0V, f=1MHz VDD=250V, ID=18A RG=25Ω (Note4,5) Min ±30 - Type - Max ±100 1 10 Unit nA V µA 500 3.0 - 0.53 0.16 22 3500 55 520 250 80 155 200 5.0 0.19 4500 70 670 500 170 V V/℃ V Ω S pF ns 320 400 Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR=24A,VGS=0V IDR=24A,VGS=0V, dIDR / dt =100 A / µs Min - Type 400 4.3 Max 24 96 1.4 - Unit A A V ns µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=3.4mH IAS=24A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤24A,di/dt≤200A/us,VDD