SBN13002A1

SBN13002A1 High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Total Dissipation at Ta = 25℃ Operation Junction Temperature Storage Temperature Test Conditions VBE = 0 IB = 0 IC = 0 Value 600 400 9.0 1.0 2.0 - Units V V V A A A A W ℃ ℃ tP = 5ms 10 0.75 - 40 ~ 150 - 40 ~ 150 Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Jan 2009. Rev. 0 Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved. 1/5 SBN13002A1 Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Conditions Ic=0.5mA,Ie=0 Value Min 600 Typ Max Units V BVCEO Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0 400 - - V VCE(sat) VBE(sat) ICBO ICEO IEBO hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter- Base Cutoff Current DC Current Gain Ic=200mA,Ib=100mA Ic=200mA,Ib=100mA Vcb=550V,Ie=0mA Vce=400V,Ib=0mA Veb=9V,Ic=0mA Vce=20V,Ic=20mA Vce=5V, Ic=1mA 10 9 2 - - 1.6 1.2 10 20 20 40 V V μA μA μA ts tf Storage Time Fall Time VCC=250V IC=5 IB IB1=- IB2=0.04A - 0.8 ㎲ Note: Pulse Test : Pulse width 300, Duty cycle 2% 2/5 . SBN13002A1 Fig. 1 DC Current Gain Fig. 2 Saturation Voltage Fig. 3 Power Derating Fig. 4 Safe Operation Area Fig. 5 Static Characteristics 3/5 SBN13002A1 Resistive Load Switching Test Circuit Inductive Load Switching & RBSOA Test Circuit 4/5 . SBN13002A1 TO-92 Package Dimension 1.27 1.27 0.050 0.050 5/5