SBP13003-O1
High Voltage Fast-Switching NPN Power Transistor
Features
◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply.
Absolute Maximum Ratings
Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc*= 25℃ Total Dissipation at Ta* = 25℃ Operation Junction Temperature Storage Temperature tP = 5ms Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 1.5 3.0 0.75 1.5 35 1.2 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W ℃ ℃
Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink)
Thermal Characteristics
Symbol RθJc RθJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.56 62.5 Units ℃/W ℃/W
Jan 2009. Rev. 0
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
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SBP13003-O1
Electrical Characteristics (TC=25℃
unless otherwise noted)
Symbol
Value Parameter Test Conditions Min 400 Typ Max 0.5 1.0 3.0
Units
VCEO(sus)
Collector-Emitter Breakdown Voltage
Ic=10mA,Ib=0 Ic=0.5A,Ib=0.1A
V
VCE(sat)
Collector-Emitter Saturation Voltage
Ic=1.0A,Ib=0.25A Ic=1.5A,Ib=0.5A Tc=100℃ Ic=0.5A,Ib=0.1A
V
1.0 1.2 V
VBE(sat)
Base-Emitter Saturation Voltage
Ic=1.0A,Ib=0.25A Tc=100℃
ICBO
Collector-Base Cutoff Current (Vbe=-1.5V)
Vcb=700V Vcb=700V, Tc=100℃ -
1.0 5.0 40 40 4.0 0.3
mA
hFE ts tf
DC Current Gain Storage Time Fall Time
Vce=2V,Ic=0.5A Vce=2V, Ic=1.0A VCC=5V Ic=0.5A
10 5 -
1.2 0.12
㎲
Note: Pulse Test : Pulse width 300, Duty cycle 2%
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SBP13003-O1
Fig. 1 DC Current Gain
Fig. 2 Saturation Voltage
Fig. 3 Safe Operation Area
Fig. 4 Power Derating
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SBP13003-O1
Resistive Load Switching Test Circuit
Inductive Load Switching & RBSOA Test Circuit
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SBP13003-O1
TO-220 Package Dimension
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