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SBP13003H

SBP13003H

  • 厂商:

    WINSEMI(稳先微)

  • 封装:

  • 描述:

    SBP13003H - High Voltage Fast -Switching NPN Power Transistor - Shenzhen Winsemi Microelectronics Co...

  • 数据手册
  • 价格&库存
SBP13003H 数据手册
SBP13003H High Voltage Fast -Switching NPN Power Transistor Features � � � Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc=25℃ Operation Junction temperature Storage Temperature Test Conditions VBE=0 IB=0 IC=0 Value 900 530 9.0 1.5 3.0 0.75 Units V V V A A A A W ℃ ℃ tP=5ms 1.5 30 -40~150 -40~150 Tc:Case temperature(good cooling) Thermal Characteristics Symbol RQJA Parameter Thermal Resistance Junction to Ambient value 13.6 Units ℃/W Rev.A Aug.2010 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. SB SBP13003H Electrical Characteristics(Tc=25℃ Symbol VCEO(sus) VCE(sat) unless otherwise noted) Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Test Conditions Ic=10mA,Ib=0 Ic=0.5A,Ib=0.1A Ic=1.0A,Ib=0.25A Ic=0.5A,Ib=0.1A Value Min 530 Typ Max 0.5 Units V V - - 1.0 1.0 V 1.5 1.0 VBE(sat) Base -Emitter Saturation voltage Ic=1.0A,Ib=0.25A Collector Base Cutoff Current Vcb=900V Vcb=900V,Tc=100 ℃ Vce=10V,Ic=0.4A ICBO (Vbe=-1.5v) hFE DC Current Gain 5.0 20 6 35 35 mA Vce=10V,Ic=1A Resistive Load ton ts tf Turn-on Time Storage time Fall Time Inductive Load ts tf Storage Time Fall Time Inductive Load ts tf Storage Time Fall Time VCC=15V,Ic=1A IB1=0.2A,IB2=-0.5A L=0.35mH,Vclamp=300V VCC=15V,Ic=1A IB1=0.2A,IB2=-0.5A L=0.35mH,Vclamp=300V Tc=100℃ VCC=125V,Ic=1A IB1=0.2A,IB2=-0.5A Tp=25µs 0.25 1.32 0.23 1.0 µs 3.0 0.4 - 1.2 0.12 4.0 0.3 µs - 1.8 0.16 5.0 0.4 µs Note: Pulse Test : Pulse width 300,Duty cycle 2% 2 /5 Steady, keep you advance SB SBP13003H Fig.1DC Current Gain Fig.2 Base -Emitter Saturation Voltage Fig.3 Collector-Emitter Saturation Voltage Fig.4 Safe Operation Area Fig.5 Static Characteristics Fig.6 Power Derating 3 /5 Steady, keep you advance SB SBP13003H Resistive Load Switching Test Circuit Inductive Load Switching & RBSOA Test Circuit 4 /5 Steady, keep you advance SB SBP13003H To-220 Package Dimension Unit:mm 5 /5 Steady, keep you advance
SBP13003H 价格&库存

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