SBP13005-O

SBP13005-O SBP13005-O High Voltage Fast-Switching NPN Power Transistor Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. TO-220HW Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Paramete r Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc* = 25℃ Total Dissipation at Ta* = 25℃ Operation Junction Temperature Storage Temperature Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 4.0 8.0 2.0 Units V V V A A A A W ℃ ℃ tP = 5ms 4.0 75 2.0 - 40 ~ 150 - 40 ~ 150 Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Thermal Characteristics Symbol RθJc RθJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.67 62.5 Units ℃/W ℃/W Ordering Information Order codes SBP13005-O SBP13005-O-HW Package TO220C TO220HW Marking P13005-O P13005-O Halogen Free NO NO Packaging Tube Tube Rev.B Mar.2012 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. SBP13005-O SBP13005-O Electrical Characteristics (TC=25℃ Symbol VCEO(sus) unless otherwise noted) Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Test Conditions Ic=10mA,Ib=0 Ic=1.0A,Ib=0.2A Ic=2.0A,Ib=0. 5A Ic=4A,Ib=1.0A Value Min Typ 400 - Max 0.3 Units V VCE(sat) - - 0.5 1.0 V VBE(sat) Base-Emitter Saturation Voltage Collector-Base Cutoff Current (Vbe=-1.5V) DC Current Gain Resistive Load Ic=1.0A,Ib=0.2A Ic=2.0A,Ib=0. 5A - - 1.2 1.6 1.0 5.0 40 40 V ICBO Vcb=700V Vcb=700V, Tc=100℃ Vce=2V,Ic=1.0A Vce=2V, Ic=2.0A VCC=125V , Ic=2.0A IB1=0.4A , IB2=-1.0A Tp=25㎲ VCC=15V ,Ic=1A IB1=0.4A , IB2=-0.1A L=0.35mH,Vclamp=300V 10 8 - - mA hFE ts tf Storage Time Fall Time Inductive Load 2.5 0.15 4.0 0.4 ㎲ ts tf Storage Time Fall Time Inductive Load - 1.2 0.12 4.0 0.3 ㎲ ts tf Storage Time Fall Time VCC=15V ,Ic=1A IB1=0.4A , IB2=-1.0A L=0.35mH,Vclamp=300V Tc=100℃ - 1.2 0.08 3.0 0.4 ㎲ Note: Pulse Test : Pulse width 300, Duty cycle 2% 2/6 . Steady, keep you advance SBP13005-O SBP13005-O Fig. 1 DC Current Gain Fig. 2 Collector-Emitter Saturation Voltage Fig. 3 Base--Emitter Saturation Voltage Fig. 4 Safe Operation Area Fig.5 Power Derating Fig.6 Reverse Biased Safe Operation Area 3/6 Steady, keep you advance SBP13005-O SBP13005-O Resistive Load Switching Test Circuit Inductive Load Switching & RBSOA Test Circuit 4/6 . Steady, keep you advance SBP13005-O SBP13005-O TO-220C Package Dimension Unit:mm 5/6 Steady, keep you advance SBP13005-O SBP13005-O TO-220HW Package Dimension Unit:mm 6/6 . Steady, keep you advance