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SBP13005D1

SBP13005D1

  • 厂商:

    WINSEMI(稳先微)

  • 封装:

  • 描述:

    SBP13005D1 - High Voltage Fast-SwitchingNPN Power Transistor - Shenzhen Winsemi Microelectronics Co....

  • 数据手册
  • 价格&库存
SBP13005D1 数据手册
SBP13005D1 SBP13005D1 High Voltage Fast-Switching NPN Power Transistor Features ◆ ◆ ◆ ◆ Very High Switching Speed Minimum Lot-to-Lot hFE Variation Wide Reverse Bias SOA Built-in freewheeling diode General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Total Dissipation at Ta = 25℃ Operation Junction Temperature Storage Temperature tP = 5ms Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 4.0 8.0 2.0 4.0 75 1.8 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W ℃ ℃ Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.67 62.5 Units ℃/W ℃/W Jan 2009. Rev. 0 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. SBP13005D1 SBP13005D1 Electrical Characteristics (TC=25℃ Symbol Parameter Colletor Cut-off Current ( VBE = -1.5V ) Collector-Emitter Sustaining Voltage unless otherwise noted) Value Test Conditions VCE = 700V VCE = 700V ,TC = 100℃ IB = 0, IC = 10mA IC =1.0A, IB = 0.2A Min 400 Ty p Max 1.0 5.0 0.5 0.6 1.0 10 10 1.2 1.6 40 30 3.6 1.6 2.5 Units ICEV VCEO(SUS) mA V VCE(sat) Collector-Emitter Saturation Voltage IC = 2.0A, IB = 0.5A IC = 4.0A, IB = 1.0A V VBE(sat) Base-Emitter Saturation Voltage IC =1.0A, IB = 0.2A IC = 2.0A, IB = 0.5A V hFE DC Current Gain IC = 1.0A, VCE = 5V IC = 2.0A, VCE = 5V ts tf fT VF COB Storage Time Fall Time Current Gain Bandwidth Product Diode Forward Voltage Output Capacitance IC = 2.0A, VCC = 125V IB1 = 0.4A, IB2 = -0.4A TP = 25us IC=0.5A ,VCE=10V IF=2A IC=0.5A ,VCE=10V 4 6.5 - ㎲ MHz V pF Note: Pulse Test : Pulse width 300, Duty cycle 2% 2/4 Steady, keep you advance . SBP13005D1 SBP13005D1 Fig. 1 DC Current Gain Fig. 2 Saturation Voltage Fig. 3 Power Derating Fig. 4 Safe Operation Area Fig. 5 Collect output capacitance 3/4 Steady, keep you advance SBP13005D1 TO-220 Package Dimension Unit:mm 4/4 Steady, keep you advance .
SBP13005D1 价格&库存

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