SBP13007-K

SBP13007-K High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA B General Description This device is designed for high voltage, High speed switching characteristics required such as lighting system ,switching mode power supply. C E TO220 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IB M PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Total Dissipation at Ta = 25℃ Operation Junction Temperature Storage Temperature tP = 5ms Te s t Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 8.0 16 4.0 8.0 80 2.05 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W ℃ ℃ Tc : Case temperature (good cooling) Ta : Ambient temperature (without heat sink) Thermal Characteristics Symbol RθJc RθJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.56 62.5 Units ℃/W ℃/W Rev.A Jun.2011 Copyright@W inSemi Semiconductor Co.,Ltd.,All rights reserved. T01-3 SBP13007-K Electrical Characteristics (TC=25℃ unless otherwise noted) Value Parameter Te s t Conditions Min 400 Typ Max 1.0 1.5 2.0 2.5 1.2 1.6 1.5 1.0 5.0 40 40 V V Symbol VCEO(sus) Units V Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0 Ic=2.0A,Ib=0.4A Ic=5.0A,Ib=1.0A VCE(sat) Collector-Emitter Saturation Voltage Ic=8.0A,Ib=2.0A Ic=5.0A,Ib=1.0A Tc=100℃ Ic=2.0A,Ib=0.4A - V VBE(sat) Base-Emitter Saturation Voltage Ic=5.0A,Ib=1.0A Ic=5.0A,Ib=1.0A Tc=100℃ - V ICBO Collector-Base Cutoff Current (Vbe=-1.5V) DC Current Gain Resistive Load Vcb=700V Vcb=700V, Tc=100℃ Vce=5V,Ic=2.0A Vce=5V, Ic=5.0A VCC=125V , IB1=1.0A , Tp=25㎲ Ic=5.0A IB2=-1.0A 8 5 - - mA hFE ts tf Storage Time Fall Time Inductive Load 1.5 0.17 3.0 0.4 ㎲ ts tf Storage Time Fall Time Inductive Load VCC=15V ,Ic=5A IB1=1.0A , IB2=-2.5A L=0.35mH,Vclamp=300V VCC=15V ,Ic=1A IB1=0.4A , IB2=-1.0A L=0.35mH,Vclamp=300V Tc=100℃ - 0.8 0.06 2.0 0.12 ㎲ ts tf Storage Time Fall Time - 1.0 0.07 3.0 0.15 ㎲ Note: Pulse Test : Pulse width 300, Duty cycle 2% 2/5 Copyright@W inSemi Semiconductor Co.,Ltd.,All rights reserved. SBP13007-K Fig. 1 DC Current Gain Fig. 2 Collector-Emitter Saturation Voltage Fig. 3 Base--Emitter Saturation Voltage Fig. 4 Safe Operation Area Fig.5 Power Derating Fig.6 Reverse Biased Safe Operation Area 3/5 Copyright@W inSemi Semiconductor Co.,Ltd.,All rights reserved. SBP13007-K Resistive Load Switching Test Circuit Inductive Load Switching & RBSOA Test Circuit 4/5 Copyright@W inSemi Semiconductor Co.,Ltd.,All rights reserved. SBP13007-K TO-220 Package Dimension Unit:mm 5/5 Copyright@W inSemi Semiconductor Co.,Ltd.,All rights reserved.