SBP13009-K

SBP13009-K High Voltage Fast-Switching NPN Power Transistor Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed Switching characteristics required such as lighting system,switching mode power supply. Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG P a r a m et e r Collector -Emitter Voltage Collector -Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc*=25℃ Total Dissipation at Ta*=25℃ Operation Junction Temperature Storage Temperature Test Conditions VBE=0 IB=0 IC=0 Value 700 400 9.0 12 25 6.0 Units V V V A A A A W tP=5ms 12 100 2.2 -40~150 -40~150 ℃ ℃ Tc :Case temperature (good cooling) Ta :Ambient temperature (without heat sink) Thermal Characteristics Symbol RӨJC RӨJA P a r a m et e r Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.25 40 Units ℃/W ℃/W Rev.A Jun.2011 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. SBP13009-K Electrical Characteristics(Tc=25℃ Symbol VCEO(sus) unless otherwise noted) P a r a m et e r Collector-Emitter Breakdown Voltage Tes t Conditio ns Ic=10mA,Ib=0 Ic=5.0A,Ib=1.0A Ic=8.0A,Ib=1.6A Value Min 400 Typ - Max 0.5 Units V - - 2.0 2.5 V VCE(sat) Collector -Emitter Saturation Voltage Ic=12A,Ib=3.0A Ic=8.0A,Ib=1.6A Tc=100℃ Ic=5.0A,Ib=1.0A - 2.0 1.2 1.6 1.5 1.0 5.0 40 40 V VBE(sat) Base -Emitter Saturation Voltage Ic=8.0A,Ib=1.6A Ic=8.0A,Ib=1.6A Tc=100℃ - - V - - V ICBO Collector -Base Cutoff Current (Vbe=-1.5V) DC Current Gain Resistive Load Vcb=700V Vcb=700V,Tc=100℃ Vce=5V,Ic=5.0A Vce=5V,Ic=8.0A 8 5 - mA hFE ts tf Storage time Fall Time Inductive Load VCC=125V,Ic=6.0A IB1=1.6A,IB2=-1.6A TP=25µs VCC=15V,Ic=5A IB1=1.6A,Vbe(off)=5V L=0.35mH,Vclamp=300 V - 1.5 0.17 3.0 0.4 µs ts tf Storage Time Fall Time 0.8 0.04 2.0 0.1 µs Inductive Load ts tf Storage Time Fall Time VCC=15V,Ic=1A IB1=0.4A,Vbe(off)=5V L=0.2mH,Vclamp=300V Tc=100℃ - 0.8 0.05 2.5 0.15 µs Note: Pulse Test : Pulse Width300,Duty cycle 2% 2/5 Steady, keep you advance Steady, SBP13009-K Fig.1 DC Curr ent Gain Fig.2 Collector -Emitter Saturation Voltage Fig.3 Bade-Emitter Saturation Voltage Fig.4 Safe Operation Area Fig.5 Power Derating Fig.6 Reverse Biased Safe Operation Area 3/5 Steady, Steady, keep you advance SBP13009-K Resistive Load Switching Test Circuit Inductive Load Switching & RBSOA Test Circuit 4/5 Steady, keep you advance SBP13009-K To-220 Package Dimension Unit:mm 5/5 Steady, keep you advance