SBP13009D

SBP13009D High Voltage Fast-Switching NPN Power Transistor Features ◆ ◆ ◆ ◆ Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in free wheeling diode General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Total Dissipation at Ta = 25℃ Operation Junction Temperature Storage Temperature tP = 5ms Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 12 25 6.0 12 100 2.2 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W ℃ ℃ Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Thermal Characteristics Symbol RθJc RθJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.25 40 Units ℃/W ℃/W Jan 2009. Rev. 0 Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved. 1/5 SBP13009D Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol VCEO(sus) Value Parameter Test Conditions Min 400 Typ Max 0.5 1.0 1.5 2.0 1.2 1.6 1.5 1.0 5.0 40 40 Units V Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0 Ic=5.0A,Ib=1.0A Ic=8.0A,Ib=1.6A V VCE(sat) Collector-Emitter Saturation Voltage Ic=12A,Ib=3.0A Ic=8.0A,Ib=1.6A Tc=100℃ I Ic=5.0A,Ib=1.0A - V V VBE(sat) Base-Emitter Saturation Voltage Ic=8.0A,Ib=1.6A Ic=8.0A,Ib=1.6A Tc=100℃ - V ICBO Collector-Base Cutoff Current (Vbe=-1.5V) DC Current Gain Resistive Load Vcb=700V Vcb=700V, Tc=100℃ Vce=5V,Ic=5.0A Vce=5V, Ic=8.0A 10 6 - - mA hFE ts tf ts tf ts tf fT VF COB Storage Time Fall Time Inductive Load Storage Time Fall Time Inductive Load Storage Time Fall Time Current Gain Bandwidth Product Diode Forward Voltage Output Capacitance VCC=125V , IB1=1.6A , Tp=25㎲ Ic=6.0A IB2=-1.6A 1.5 0.17 4 0.8 0.04 0.8 0.05 6.5 3.0 0.4 2.0 0.1 2.5 0.15 2.5 ㎲ VCC=15V ,Ic=5A IB1=1.6A , Vbe(off)=5V L=0.35mH,Vclamp=300V VCC=15V ,Ic=1A IB1=0.4A , Vbe(off)=5V L=0.2mH,Vclamp=300V Tc=100℃ IC=0.5A ,VCE=10V IF=2A IC=0.5A ,VCE=10V ㎲ ㎲ MHz V pF Note: Pulse Test : Pulse width 300, Duty cycle 2% 2/5 . SBP13009D Fig. 1 DC Current Gain Fig. 2 Collector-Emitter Saturation Voltage Fig. 3 Base--Emitter Saturation Voltage Fig. 4 Safe Operation Area Fig.5 Power Derating Fig.6 Reverse Biased Safe Operation Area 3/5 SBP13009D Resistive Load Switching Test Circuit Inductive Load Switching & RBSOA Test Circuit 4/5 . SBP13009D TO-220 Package Dimension 5/5