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SBP1710-R

SBP1710-R

  • 厂商:

    WINSEMI(稳先微)

  • 封装:

  • 描述:

    SBP1710-R - High Voltage Fast-Switching NPN Power Transistor - Shenzhen Winsemi Microelectronics Co....

  • 数据手册
  • 价格&库存
SBP1710-R 数据手册
SB SBP1710-R High Voltage Fast-Switching NPN Power Transistor Features ■ ■ ■ Very high switching speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collect-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Total Dissipation at Tc=25℃ Operation Junction Temperature Storage Temperature (Note) Test Conditions VBE=0 IB=0 IC=0 Value 900 500 7 7 14 45 150 -55~150 Units V V V A A W ℃ ℃ Rev.A01 Jun.2011 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. T111-3 SBP1710-R SBP1710-R Electrical Characteristics (T =25℃ unless otherwise noted) C Symbol ICBO IEBO BVCBO BVCEO BVEBO VCE(sat) VBE(sat) IEBO Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector -Emitter Saturation Voltage Base -Emitter saturation Voltage Emitter -Base Cutoff Current Test conditions VCB=500V, Ie=0A VEB=5V, Ic=0A Value Min 900 500 7 20 8 3 - Typ - Max 10 10 1 1.5 10 50 18 80 0.6 8 0.4 Units µA µA V V V V V µA Ic=1mA,Ie=0 Ic=5mA,Ib=open Ie=1mA,Ic=0 Ic=3A,Ib=0.6A Ic=3A,Ib=0.6A Veb=5V,Ic=0 Vce=5V,Ic=0.6A hFE DC Current Gain Vce=5V,Ic=3A fT Cob ton ts tf Gain-Bandwidth Product Output Capacitance Turn on Time Storage Time Fall Time Vce=10V,Ic=0.6A VCB=10V, f=1MHz VCC=5V,IC=0.5A VCC=5V,IC=0.5A VCC=5V,IC=0.5A MHz pF µs µs µs Note: Pulse Test: Pulse width≤300µs,Duty cycle 10% 2/6 Steady, all for your advance SBP1710-R SBP1710-R Fig. 1 Collector Current VS Collector-Emitter Voltage Fig. 2 Collector Current VS Emitter-Base Voltage Fig. 3 DC Current Gain Fig. 4 Collector-Emitter Saturation Voltage Fig. 5 Base-Emitter Saturation Voltage Fig.6 Switching Time 3/6 Steady, all for your advance SBP1710-R SBP1710-R Fig.7 Safe Operation Area Fig.8 Reverse Biased Safe Operation Area Fig.9 Thermal Resistance Fig.10 Power Derating 4/6 Steady, all for your advance SBP1710-R SBP1710-R Fig.11 Inductive Load Switching & RBSOA Test Circuit Fig.12 Inductive Load Switching &RBSOA Test Circuit 5/6 Steady, all for your advance SBP1710-R SBP1710-R To-220 Package Dimension Unit:mm 6/6 Steady, all for your advance
SBP1710-R 价格&库存

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