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SBR13003B

SBR13003B

  • 厂商:

    WINSEMI

  • 封装:

  • 描述:

    SBR13003B - High Voltage Fast -Switching NPN Power Transistor - Shenzhen Winsemi Microelectronics Co...

  • 数据手册
  • 价格&库存
SBR13003B 数据手册
SBR13003B High Voltage Fast -Switching NPN Power Transistor Features � � � Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as system,switching mode power supply. lighting Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector -Emitter Voltage Collector -Emitter voltage Emitter-Bade Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total dissipation at Tc=25℃ Operation Junction Temperature Storage Temperature Test Conditions VBE=0 IB=0 IC=0 Value 700 400 9.0 1.5 3.0 0.75 Units V V V A A A A W ℃ ℃ tP=5ms 1.5 30 -40~150 -40~150 Thermal Characteristics Symbol RӨJC RӨJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 4.16 89 Units ℃/W ℃/W Rev.A Aug.2010 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. SBR13003B SBR13003B Electrical Characteristics(Tc=25℃ Symbol VCEO(sus) unless otherwise noted) Parameter Collector-Emitter Breakdown Voltage Test Conditions Ic=10mA,Ib=0 Ic=0.5A,Ib=0.1A Value Min 400 Typ - Max 0.3 Units V VCE(sat) Collector -Emitter Saturation Voltage Ic=1.0A,Ib=0.25A Ic=1.5A,Ib=0.5A - - 0.5 1.0 V VBE(sat) Base -Emitter Saturation Voltage Collector -Base Cutoff Current (Vbe= -1.5v) DC Current Gain Resistive Load Ic=0.5A,Ib=0.1A Ic=1.0A,Ib=0.25A Vcb=700V Vcb=700V,Tc=100℃ Vce=2V,Ic=0.5A Vce=2V,Ic=1.0A - - 1.0 1.2 1.0 5.0 30 25 V ICBO 10 5 - mA hFE ton ts tf Turn -on Time Storage Time Fall Time Inductive Load VCC=125V,Ic=1A IB1=0.2A,IB2= -0.5A TP=25µs - 0.2 1.5 0.15 1.0 3.0 0.4 µs ts tf Storage Time Fall Time VCC=15V,Ic=1A IB1=0.2A,IB2= -0.5A L=0.35mH,Vclamp= 300V VCC=15V,Ic=1A IB1=0.2A,IB2= -0.5A L=0.35mH,Vclamp= 300V Tc=100℃ - 1.2 0.12 4.0 0.3 µs Inductive Load ts tf Storage Time Fall Time 2.4 0.15 5.0 0.4 µs Note : Pulse Test : Pulse width 300,Duty cycle 2% 2 /5 Steady, keep you advance SBR13003B SBR13003B Fig.1 DC Current Gain Fig.2 Saturation Voltage Fig.3 Switching Time Fig.4 Safe Operation Area Fig.5 Power Perating 3 /5 Steady, keep you advance SBR13003B SBR13003B Resistive Load Switching test Circuit Inductive Load Switching & RBSOA Test circuit 4 /5 Steady, keep you advance SBR13003B SBR13003B TO-126 Package Dimension Dim A B C D E F G H I J K L 0.48 0.7 1.4 3.2 1.2 2.3 4.6 0.62 0.86 0.019 0.028 0.055 0.126 mm Min. 7.5 10.8 14.2 2.7 3.8 2.5 1.5 0.047 0.091 0.181 0.024 0.034 Typ. Max. 7.9 11.2 14.7 2.9 Min. 0.295 0.425 0.559 0.106 0.150 0.098 0.059 Inch Typ. Max. 0.311 0.441 0.579 0.114 Φ 5 /5 Steady, keep you advance
SBR13003B 价格&库存

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