SBR13003B3

SBR13003B3 High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc* = 25℃ Total Dissipation at Ta* = 25℃ Operation Junction Temperature Storage Temperature Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 1.5 3.0 0.75 Units V V V A A A A W ℃ ℃ tP = 5ms 1.5 20 0.8 - 40 ~ 150 - 40 ~ 150 Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Thermal Characteristics Symbol RθJc RθJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 3.12 89 Units ℃/W ℃/W Jan 2009. Rev. 0 Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved. 1/5 SBR13003B3 Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol VCEO(sus) Parameter Test Conditions Value Min 400 Typ Max 0.3 0.5 1.0 1.0 1.2 1.0 5.0 30 25 Units V Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0 Ic=0.5A,Ib=0.1A VCE(sat) Collector-Emitter Saturation Voltage Ic=1.0A,Ib=0.25A Ic=1.5A,Ib=0.5A V VBE(sat) Base-Emitter Saturation Voltage Collector-Base Cutoff Current (Vbe=-1.5V) DC Current Gain Resistive Load Ic=0.5A,Ib=0.1A Ic=1.0A,Ib=0.25A V ICBO Vcb=700V Vcb=700V, Tc=100℃ Vce=2V,Ic=0.5A Vce=2V, Ic=1.0A 10 5 - mA hFE ton ts tf ts tf ts tf Turn-on Time Storage Time Fall Time Inductive Load Storage Time Fall Time Inductive Load Storage Time Fall Time VCC=125V ,Ic=1A IB1=0.2A , IB2=-0.5A Tp=25㎲ - 0.2 1.5 0.15 1.0 3.0 0.4 4.0 0.3 ㎲ VCC=15V ,Ic=1A IB1=0.2A , IB2=-0.5A L=0.35mH,Vclamp=300V VCC=15V ,Ic=1A IB1=0.2A , IB2=-0.5A L=0.35mH,Vclamp=300V Tc=100℃ - 1.2 0.12 ㎲ - 2.4 0.15 5.0 0.4 ㎲ Note: Pulse Test : Pulse width 300, Duty cycle 2% 2/5 . SBR13003B3 Fig. 1 DC Current Gain Fig. 2 Saturation Voltage Fig. 3 Switching Time Fig. 4 Safe Operation Area Fig.5 Power Derating 3/5 SBR13003B3 Resistive Load Switching Test Circuit Inductive Load Switching & RBSOA Test Circuit 4/5 . SBR13003B3 TO-126 Package Dimension 1 3 5/5