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SBW13009-S

SBW13009-S

  • 厂商:

    WINSEMI(稳先微)

  • 封装:

  • 描述:

    SBW13009-S - High Voltage Fast-Switching NPN Power Transistor - Shenzhen Winsemi Microelectronics Co...

  • 数据手册
  • 价格&库存
SBW13009-S 数据手册
SBW13009-S High Voltage Fast-Switching NPN Power Transistor Features � � � Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage,High speed switching characteristics required such as system,switching mode power supply. lighting Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector -emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc=25℃ Operation Junction Temperature Storage Temperature Test Conditions VBE =0 IB=0 IC=0 Value 700 400 9.0 12 25 6.0 Units V V V A A A A W ℃ ℃ tP=5ms 12 120 -40~150 -40~150 Thermal Characteristics Symbol RӨJC RӨJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.04 62.5 Units ℃/W ℃/W Rev.A Aug.2010 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. SBW13009-S SBW13009-S Electrical Characteristics(Tc=25℃ Symbol VCEO(sus) unless otherwise noted) Parameter Collector -Emitter Breakdown Voltage Test Conditions Ic=10mA,Ib=0 Ic=5.0A,Ib=1.0A Ic=8.0A,Ib=1.6A Value Min 400 Typ - Max 1.0 Units V - - 1.5 3.0 V VCE(sat) Collector -Emitter Saturation Voltage Ic=12A,Ib=3.0A Ic=8.0A,Ib=1.6A Tc=100℃ Ic=5.0A,Ib=1.0A - 2.0 1.2 1.6 1.5 10 40 30 10 0.8 V VBE(sat) Base-Emitter Saturation Voltage Ic=8.0A,Ib=1.6A Ic=8.0A,Ib=1.6A Tc=100℃ - - V 10 6 4 - V uA IEBO hFE ts tf fT Emitter-Base Cutoff Current DC Current Gain Storage Time Fall Time Current Gain Bandwidth Product Veb=9V,Ic=0V Vce=5V,Ic=5.0A Vce=5V,Ic=8.0A VCC=5.0V,Ic=0.5A (UI9600) Vce=10V,Ic=0.5A µs MHz 4 Note : Pulse Test : Pulse width 300,Duty cycle 2% 2 /5 Steady, keep you advance SBW13009-S SBW13009-S Fig.1 DC Current Gain Fig.2 Collector -Emitter Saturation Voltage Fig.3 Base -Emitter Saturation Voltage Fig.4 Safe Operation Area Fig.5 Power Derating Fig.6 Reverse Biased Safe Operation Area 3 /5 Steady, keep you advance SBW13009-S SBW13009-S Resistive Load Switching Test Circuit Inductive Load Switching & RBSOA Test Circuit 4 /5 Steady, keep you advance SBW13009-S SBW13009-S To3P(B) Package Dimension Unit :mm 5 /5 Steady, keep you advance
SBW13009-S 价格&库存

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