SBW3320
High Voltage Fast-Switching NPN Power Transistor
Features
◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA
TO3P SBW3320
General Description
This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply.
TO247 SBW3320W
Absolute Maximum Ratings
Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Operation Junction Temperature Storage Temperature tP = 5ms Te s t Conditions VBE = 0 IB = 0 IC = 0 Value 500 400 7.0 15 30 5.0 10 80 150 -65 ~ 150 Units V V V A A A A W ℃ ℃
Thermal Characteristics
Symbol RθJc RθJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.56 62.5 Units ℃/W ℃/W
Jal 2011 . ev.2 R
Copyright@W insemi Microelectronics Co., Ltd., All right reserved.
T02-1
SBW3320
Electrical Characteristics (TC=25℃ unless otherwise noted)
Symbol VCEO(sus) Value Parameter Te s t Conditions Min 400 Typ Max 1.0 Units V V
Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0 Ic=6.0A,Ib=1.2A
VCE(sat)
Collector-Emitter Saturation Voltage Ic=8.0A,Ib=1.6A Tc=100℃ Ic=6.0A,Ib=1.2A 1.2 V 2.0 V
VBE(sat)
Base-Emitter Saturation Voltage Ic=8.0A,Ib=1.6A Tc=100℃ 10 6 4 4 1.5 1 1 40 30 6 0.8 MHz ㎲ V mA mA
IEBO IcBO hFE ts tf fT
Emitter-Base Cutoff Current Collector-Base Cutoff Current DC Current Gain Storage Time Fall Time Current Gain Band with Prouct
Veb=7V,Ic=0V Vcb=500V,Ic=0V Vce=5V, Ic=5.0A Vce=5V, Ic=8.0A VCC=5.0V , (UI9600) Vce=10V, Ic=0.5A Ic=0.5A
Note: Pulse Test : Pulse width 300, Duty cycle 2%
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SBW3320
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SBW3320
Resistive Load Switching Test Circuit
Inductive Load Switching & RBSOA Tes t Circuit
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SBW3320
TO3P(B) Package Dimension
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SBW3320
TO3P(N) Package Dimension
Unit :mm
6 /7
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SBW3320
TO247 Package Dimension
Unit:mm
7 /7
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