SFF4N60

SFF4N60 Silicon N-Channel MOSFET Features ■ 4A,600V,RDS(on)(Max 2.2Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage(VISO=4000V AC) ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have rugged suited avalanche characteristics. for half bridge and full a high This devices is specially well line a bridge resonant topology electronic lamp ballast. Absolute Maximum Ratings Symbol VD S S ID Continuous Drain Current(@Tc=100℃) IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1) 2.5* 16* ±30 240 10 4.5 33 0.26 -55~150 300 A A V mJ mJ V/ ns W W/℃ ℃ ℃ Drain Source Voltage Continuous Drain Current(@Tc=25℃) Pa ram eter Value 600 4* Units V A *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RQJC RQJA P a r a m et e r Thermal Resistance , Junction -to -Case Thermal Resistance , Junction-to -Ambient Value Min - Typ - Max 3.79 62.5 Units ℃/W ℃/W Rev.A Jun.2010 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. SFF4N60 Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage S y m bol IGS S V(BR)GSS Test Condition VGS=±30V,VDS=0V IG=±10 µA,VDS=0V VDS=600V,VGS=0V Min ±30 600 2 - Type - Max ±100 10 100 Un i t nA V µA µA V V Ω Drain cut -off current IDSS VDS=480V,Tc=125℃ ID=250 µA,VGS=0V VDS=10V,ID=250 µA VGS=10V,ID=3.25A VDS=25V, VGS=0V, f=1MHz VDD=300V, ID=4.4A ， RG=25Ω， (Note4,5) VDD=480V, Drain -source breakdown voltage Gate threshold voltage Drain -source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source V(BR)DSS VGS(th) RDS(ON) Ciss Crss Coss tr ton tf toff Qg 1.8 545 7 70 10 35 45 20 16 3.4 7 4 2.2 670 10 90 30 80 pF ns 100 50 20 nC - - plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd VGS=10V, ID=4.4A (Note4,5) - Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR=4.4A,VGS=0V IDR=4.4A,VGS=0V, dIDR / dt =100 A / µs Min - Type 390 2.2 Max 4 17.6 1.4 - Unit A A V ns µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=18.5mH IAS=4.4A,VDD=50V,RG=0Ω ,Starting TJ=25℃ 3.ISD≤4A,di/dt≤200A/us,VDD