SFF740

SFF740 Silicon N-Channel MOSFET Features ■ 10A,400V,RDS(on)(Max 0.55Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 60nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS tech no lo gy. This latest technology has beenespecially designed to m inimize on -state resistance,have a highrugged avalanche c hara cteristics. This devices is specially wellsuited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol VD S S ID Continuous Drain Current(@Tc=100℃) IDM VGS EAS EAR dv/dt PD Derating Factor above 25℃ TJ,Tstg TL Junction and Storage Temperature Maximum lead Temperature for soldering purposes 0.35 -55~150 300 W/℃ ℃ ℃ Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) (Note2) (Note1) (Note3) (Note1) 6.3* 40* ±30 450 13 4 44 A A V mJ mJ V/ ns W Drain Source Voltage Continuous Drain Current(@Tc=25℃) Pa ram eter Value 400 10* Units V A *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RQJC RQJA P a r a m et e r Thermal Resistance , Junction -to -Case Thermal Resistance , Junction-to -Ambient Value Min - Typ - Max 2.86 62.5 Units ℃/W ℃/W Rev.A Jun.2011 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. SFF740 Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut -off current Drain -source breakdown voltage Break voltage Temperature Coefficient Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source Qg plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd VGS=10V, nC ID=10A (Note4,5) 7 27 tf toff VDD=320V, 60 71 S y m bol IGS S V(BR)GSS IDSS V(BR)DSS △BVDSS/ △TJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton Test Condition VGS=±30V,VDS=0V IG=±10 µA,VDS=0V VDS=400V,VGS=0V ID=250 µA,VGS=0V ID=250µA, Referenced Min ±30 400 - Type 0.4 0.48 9.6 1400 36 150 20 80 125 85 Max ±100 25 4 0.55 1800 46 195 50 170 Un i t nA V µA V V/℃ to 25℃ VDS=10V,ID=250 µA VGS=10V,ID=5A VDS=40V,ID=5A VDS=25V, VGS=0V, f=1MHz VDD=200V, ID=10A， RG=25Ω， (Note4,5) 2 V Ω S pF ns 260 180 Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR=10A,VGS=0V IDR=10A,VGS=0V, dIDR / dt =100 A / µs Min - Type 1.4 330 3.57 Max 10 40 1.5 - Un i t A A V ns µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=7.9mH IAS=10A,VDD=50V,RG=0Ω ,Starting TJ=25℃ 3.ISD≤10A,di/dt≤300A/us,VDD