SFF7N60

SFF7N60 Silicon N-Channel MOSFET Features ■ 7A,600V,RDS(on)(Max 1.0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 29nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage(VISO=4000V AC) ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have rugged suited avalanche characteristics. for half lamp bridge and full ballast,high a high This devices is specially well line a bridge resonant topology efficiency switched electronic mode power supplies, active power factor correction. Absolute Maximum Ratings Symbol VD S S ID Continuous Drain Current(@Tc=100℃) IDM VGS EAS EAR dv/dt PD Derating Factor above 25℃ TJ,Tstg TL Junction and Storage Temperature Channel Temperature 0.38 -55~150 300 W/℃ ℃ ℃ Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) (Note2) (Note1) (Note3) (Note1) 4.1* 26 ±30 240 15 4.5 48 A A V mJ mJ V/ ns W Drain Source Voltage Continuous Drain Current(@Tc=25℃) Pa ram eter Value 600 7* Units V A *Drain current limited by junction temperature Thermal Characteristics Symbol RQJC RQJA P a r a m et e r Thermal Resistance , Junction -to -Case Thermal Resistance , Junction-to -Ambient Value Min - Typ - Max 2.6 62.5 Units ℃/W ℃/W Rev.A Jun.2011 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. SFF7N60 Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage S y m bol IGS S V(BR)GSS Test Condition VGS=±30V,VDS=0V IG=±10 µA,VDS=0V VDS=600V,VGS=0V Min ±30 600 2 - Type - Max ±100 10 100 Un i t nA V µA µA V V Ω S Drain cut -off current IDSS VDS=480V,Tc=125℃ ID=250 µA,VGS=0V VDS=10V,ID=250 µA VGS=10V,ID=3.5A VDS=50V,ID=3.5A VDS=25V, VGS=0V, f=1MHz VDD=200V, ID=7.0A ， RG=25Ω， (Note4,5) VDD=480V, Drain -source breakdown voltage Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source V(BR)DSS VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton tf toff Qg 0.8 8.7 1100 15 135 30 80 65 60 29 7 14.5 4 1.0 1430 20 175 70 170 pF ns 140 130 38 nC - - plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd VGS=10V, ID=7.0A (Note4,5) - Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR=7.4A,VGS=0V IDR=7.4A,VGS=0V, dIDR / dt =100 A / µs Min - Type 320 2.4 Max 7.0 28 1.4 - Unit A A V ns µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=18.5mH IAS=7A,VDD=50V,RG=0Ω ,Starting TJ=25℃ 3.ISD≤7.0A,di/dt≤200A/us,VDD