SFP13N50

SFP13N50 Silicon N-Channel MOSFET Features ■ 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 43nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,DMOS technology.This latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol VD S S ID Continuous Drain Current(@Tc=100℃) IDM VGS EAS EAR dv/dt PD Derating Factor above 25℃ TJ,Tstg TL Junction and Storage Temperature Channel Temperature 1.56 -55~150 300 W/℃ ℃ ℃ Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) (Note2) (Note1) (Note3) (Note1) 8 52 ±30 845 5 3.5 195 A A V mJ mJ V/ ns W Drain Source Voltage Continuous Drain Current(@Tc=25℃) Pa ram eter Value 500 13 Units V A Thermal Characteristics Symbol RQJC RQCS RQJA P a r a m et e r Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient Value Min - Typ 0.5 - Max 0.64 62.5 Units ℃/W ℃/W ℃/W Rev.A Oct.2010 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. SFP13N50 Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage S y m bol IGS S V(BR)GSS Test Condition VGS=±30V,VDS=0V IG=±10 µA,VDS=0V VDS=500V,VGS=0V Min ±30 - Type - Max ±100 1 10 Un i t nA V µA µA V V/℃ Drain cut -off current IDSS VDS=400V,TC=125℃ ID=250 µA,VGS=0V ID=250µA,Referenced 0.5 0.37 15 1580 21 180 25 100 130 100 43 7.5 18.5 500 - Drain -source breakdown voltage Breakdown voltage Temperature Coefficient Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source V(BR)DSS △BVDSS/ △TJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton tf toff Qg 4.5 0.46 2055 26 235 60 210 to 25℃ VDS=10V,ID=250 µA VGS=10V,ID=6.5A VDS=50V,ID=6.5A VDS=25V, VGS=0V, f=1MHz VDD=250V, ID=13A RG=9.1Ω RD=31Ω VDD=400V, VGS=10V, nC ID=13A (Note4,5) 56 (Note4,5) 3 V Ω S pF ns 270 210 plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR=13A,VGS=0V IDR=13A,VGS=0V, dIDR / dt =100 A / µs Min - Type 442 2.16 Max 13 52 1.4 633 3.24 Unit A A V ns µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=500uH IAS=13A,VDD=50V,RG=0Ω,Starting TJ=25℃ 3.ISD≤13A,di/dt≤300A/us,VDD