SFP740

SFP740 Silicon N-Channel MOSFET Features � � � � � 10A,400V,RDS(on)(Max 0.55Ω)@VGS=10V Ultra-low Gate Charge(Typical 45nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Maximum lead Temperature for soldering purposes (Note2) (Note1) (Note3) (Note1) Parameter Value 400 10 6.3 40 ±30 450 13 4 134 1.0 -55~150 300 Units V A A A V mJ mJ V/ ns W W/℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient Value Min - Typ 0.5 - Max 0.93 62 Units ℃/W ℃/W ℃/W Rev.A Aug.2010 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. SFP740 Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut -off current Drain -source breakdown voltage Break voltage Temperature Coefficient Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source Qg plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd VGS=10V, nC ID=10A (Note4,5) 7 27 tf toff VDD=320V, 45 71 Symbol IGSS V(BR)GSS IDSS V(BR)DSS △BVDSS/ △TJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton Test Condition VGS=±30V,VDS=0V IG=±10 µA,VDS=0V VDS=400V,VGS=0V ID=250 µA,VGS=0V ID=250µA, Referenced Min ±30 400 - Type 0.4 0.48 9.6 1400 36 150 20 80 125 85 Max ±100 25 4 0.55 1800 46 195 50 170 Unit nA V µA V V/℃ V Ω S to 25℃ VDS=10V,ID=250 µA VGS=10V,ID=5A VDS=40V,ID=5A VDS=25V, VGS=0V, f=1MHz VDD=200V, ID=10A， RG=25Ω， (Note4,5) 2 - pF ns 260 180 Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR=10A,VGS=0V IDR=10A,VGS=0V, dIDR / dt =100 A / µs Min - Type 1.4 330 3.57 Max 10 40 1.5 - Unit A A V ns µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=7.9mH IAS=10A,VDD=50V,RG=0Ω ,Starting TJ=25℃ 3.ISD≤10A,di/dt≤300A/us,VDD