0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
WBR13003B

WBR13003B

  • 厂商:

    WINSEMI(稳先微)

  • 封装:

  • 描述:

    WBR13003B - HighVoltageFast-SwitchingNPNPowerTransistor - Shenzhen Winsemi Microelectronics Co., Ltd

  • 数据手册
  • 价格&库存
WBR13003B 数据手册
WBR13003B High Voltage Fast -Switching NPN Power Transistor Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as mode power supply. lighting system,switching Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector -Emitter Voltage Collector -Emitter voltage Emitter-Bade Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total dissipation at Tc=25℃ Operation Junction Temperature Storage Temperature Tes t Conditions VBE=0 IB=0 IC=0 Value 600 400 9.0 1.5 3.0 0.75 Units V V V A A A A W ℃ ℃ tP=5ms 1.5 30 -40~150 -40~150 Thermal Characteristics Symbol RӨJC RӨJA P a r a m et e r Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 4.16 89 Units ℃/W ℃/W Rev.A Aug.2010 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. WBR13003B Electrical Characteristics(Tc=25℃ Symbol VCEO(sus) unless otherwise noted) Parameter Collector-Emitter Breakdown Voltage Test Conditions Min Ic=10mA,Ib=0 Ic=0.5A,Ib=0.1A 400 V a lu e Typ - Units Max 0.3 V VCE(sat) Collector -Emitter Saturation Voltage Ic=1.0A,Ib=0.25A Ic=1.5A,Ib=0.5A Ic=0.5A,Ib=0.1A Ic=1.0A,Ib=0.25A - - 0.5 1.0 V VBE(sat) Base -Emitter Saturation Voltage Collector -Base Cutoff Current (Vbe= -1.5v) - - 1.0 1.2 V ICBO Vcb=700V Vcb=700V,Tc=100℃ Vce=2V,Ic=0.5A Vce=2V,Ic=1.0A 10 5 - 1.0 5.0 30 25 mA hFE DC Current Gain Resistive Load ton ts tf Turn -on Time Storage Time Fall Time Inductive Load VCC=125V,Ic=1A IB1=0.2A,IB2= -0.5A TP=25µs VCC=15V,Ic=1A IB1=0.2A,IB2= -0.5A L=0.35mH,Vclamp= 300V 0.2 1.5 0.15 1.0 3.0 0.4 µs ts tf Storage Time Fall Time - 1.2 0.12 4.0 0.3 µs Inductive Load ts tf Storage Time Fall Time VCC=15V,Ic=1A IB1=0.2A,IB2= -0.5A L=0.35mH,Vclamp= 300V Tc=100℃ - 2.4 0.15 5.0 0.4 µs Note : Pulse Test : Pulse width 300,Duty cycle 2% 2/5 Steady, keep you advance WBR13003B Fig.1 DC Current Gain Fig.2 Saturation Voltage Fig.3 Switching Time Fig.4 Safe Operation Area Fig.5 Power Perating 3/5 Steady, keep you advance WBR13003B Resistive Load Switching test Circuit Inductive Load Switching & RBSOA Test circuit 4/5 Steady, keep you advance WBR13003B TO-126 Package Dimension Unit: 5/5 Steady, keep you advance
WBR13003B 价格&库存

很抱歉,暂时无法提供与“WBR13003B”相匹配的价格&库存,您可以联系我们找货

免费人工找货