WBR13003B3

WBR13003B3 High Voltage Fast -Switching NPN Power Transistor Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA General Description This Device is designed for high voltage, switching characteristics required such electronic energy saving lamps, electronic mobile phone chargers power Switch circuit, component of such electronic products. High speed ascompact ballast and is the core Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP PC TJ TSTG Parameter Collector -Emitter Voltage Collector -Emitter voltage Emitter-Bade Voltage Collector Current Collector pulse Current Total dissipation at Tc=25℃ Operation Junction Temperature Storage Temperature Test Conditions VBE=0 IB=0 IC=0 Value 600 450 9.0 1.0 2.0 18 150 -40~150 Units V V V A A W ℃ ℃ Thermal Characteristics Symbol RӨJC RӨJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 6.94 89 Units ℃/W ℃/W Rev.A Mar.2011 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. WBR13003B3 Electrical Characteristics(Tc=25℃ Symbol VCEO(sus) VCE(sat) VBE(sat) ICBO ICEO IEBO hFE fT ton ts tf unless otherwise noted) Parameter Collector-Emitter Breakdown Voltage Collector -Emitter Saturation Voltage Base -Emitter Saturation Voltage Collector -Base Cutoff Current Collector -EmitterCutoff Current Emitter -Base Cutoff Current DC Current Gain Test Conditions Ic=10mA,Ib=0 Ic=0.2A,Ib=40mA Ic=0.2A,Ib=40mA Vcb=600V Ie=0 Vce=400V Ib=0 Veb=7V Ic=0 Vce=10V,Ic=10mA Vce=10V Ic=50mA Value Min 450 10 5 Typ 0.2 Max 0.3 1.2 0.1 0.25 0.1 30 1.0 4.0 0.4 Units V V V mA mA mA Characteristic frequency Turn -on Time Storage Time Fall Time F=1MHz Vcc=5V, Ic=0.1A MHz 1.5 0.15 µs Note : Pulse Test : Pulse width 300,Duty cycle 2% 2 /4 Steady, keep you advance WBR13003B3 Resistive Load Switching test Circuit Inductive Load Switching & RBSOA Test circuit 3 /4 Steady, keep you advance WBR13003B3 TO-126 Package Dimension Unit:mm 4 /4 Steady, keep you advance