WBR13003D1

WB WBR13003D1 High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ W ide Reverse Bias SOA ◆ Built-in freewheeling diode General Description T h i s De v ic e i s d e si g n e d f o r h i g h v o l t a g e , H i g h s p e e d switching characte ristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Operation Junction emperature Storage Temperature Test Conditions VBE = 0 IC = 1mA IE= 0.1mA Value 700 400 9 1.5 3.0 0.75 Units V V V A A A A tP = 5ms 1.5 20 150 -55 ~ 150 PC TJ TSTG W ℃ ℃ 1/ 4 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. WB WBR13003D1 Electrical Characteristics (Tc = 25° C) Value Min 700 400 1.6 1.2 0.1 0.1 0.1 Symbol BVCBO BVCEO VCE(sat) VBE(sat) ICBO ICEO IEBO Parameter Collector-Base Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter- Base Cutoff Current Test Conditions Ic=1mA,Ib=0 Ic=10mA,Ib=0 Ic=200mA,Ib=100mA Ic=200mA,Ib=100mA Vcb=600V,Ie=0mA Vce=400V,Ib=0mA Veb=9V,Ic=0mA Units Max V V V V mA mA mA Typ Vce=20V,Ic=20mA h FE DC Current Gain Vce=5V, Ic=1mA 10 9 - 40 - tr Rise Time IC=0.1A 3 - 1 5 1 ㎲ ts tf Storage Time Fall Time - Note: Pulse Test : Pulse width 300, Duty cycle 2% 2/ 4 Steady, keep you advance WB WBR13003D1 IC[A],COLLECTOR CURRENT Fig.1DC Current Gain Fig.2 Power Derating h -I FE C V CEsat -I C V BEsa t -I C 3/ 4 Steady, keep you advance WB WBR13003D1 TO-126 Package Dimension Unit: mm 4/ 4 Steady, keep you advance