WFD1N60

WFD1N60 Silicon N-Channel MOSFET Features ■ 1.3A,600V,RDS(on)(Max 8.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 9.1nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply , electronic lamp ballasts based on half bridge and UPS. Absolute Maximum Ratings Symbol VD S S ID Continuous Drain Current(@Tc=100℃) IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Maximum lead Temperature for soldering purposes (Note2) (Note1) (Note3) (Note1) 0.84 5.0 ±30 78 3.9 5.5 32 0.24 -55~150 300 A A V mJ mJ V/ ns W W/℃ ℃ ℃ Drain Source Voltage Continuous Drain Current(@Tc=25℃) Pa ram eter Value 600 1.3 Units V A Thermal Characteristics Symbol RQJC RQCS RQJA P a r a m et e r Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient Value Min 0.5 - Typ - Max 3.9 110 Units ℃/W ℃/W ℃/W Rev.A Jun.2011 Copyright@W ins emi Microelectronics Co., Ltd., All right reserved. WFD1N60 Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Symbol IGS S V(BR)GSS Te s t Conditio n VGS=±30V,V DS=0V IG=±10 µA,VDS=0V VDS=600V,VGS=0V Min ±30 600 2 - Type - Max ±100 10 100 Unit nA V µA µA V V/℃ Drain cut -off current ID S S VDS=480V,Tc=125℃ ID=250 µA,VGS=0V ID=250µA,Referenced to 25℃ VDS=10V,ID=250 µA VGS=10V,ID=0.65A VDS=40V,ID=0.65A VDS=25V, VGS=0V, f=1MHz VDD=300V, ID=1.3A ， RG=25Ω， (Note4,5) VDD=480V, Drain -source breakdown voltage Break Voltage Temperature Coefficient Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source V(BR)DSS △BVDSS/ △TJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton tf toff Qg 0.5 7.7 1.3 247 5 23 11 33 26 26 9.1 1.2 4.5 4 8.5 318 6.5 30 26 72 V Ω S pF ns 59 59 12 nC - - plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd VGS=10V, ID=1.3A (Note4,5) - Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR=1.3A,VGS=0V IDR=1.3A,VGS=0V, dIDR / dt =100 A / µs Min - Type 163 0.85 Max 1.3 5.0 1.4 - Unit A A V ns µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=92mH IAS=1.3A,VDD=50V,RG=0Ω ,Starting TJ=25℃ 3.ISD≤1.3A,di/dt≤200A/us,VDD