WFD2N60B

WFD2N60B Silicon N-Channel MOSFET Features � � � � � 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V Ultra-low Gate Charge(Typical 9nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply . Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1) Parameter Value 600 2.0 1.3 8 ±30 140 6.4 5.5 46 0.35 -55~150 300 Units V A A A V mJ mJ V/ ns W W/℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient Value Min 0.5 - Typ - Max 2.7 62.5 Units ℃/W ℃/W ℃/W Rev.A Nov.2010 Copyright@W ins emi Microelectronics Co., Ltd., All right reserved. WFD2N60B Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Symbol IGSS V(BR)GSS Test Condition VGS=±30V,VDS=0V IG=±10 µA,VDS=0V VDS=600V,V GS=0V Min ±30 600 2 - Type - Max ±100 10 100 Unit nA V µA µA V V Ω S Drain cut -off current IDSS VDS=480V,Tc=125℃ Drain -source breakdown voltage Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source V(BR)DSS VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton tf toff ID=250 µA,VGS=0V VDS=10V,ID=250 µA VGS=10V,ID=1A VDS=50V,ID=1A VDS=25V, VGS=0V, f=1MHz VDD=300V, ID=2A， RG=25Ω， (Note4,5) VDD=320V, 4.5 2.25 280 6 45 10 25 20 25 9.0 1.7 4.5 4 5.0 330 8 55 28 55 pF ns 60 60 12 nC - - Qg plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd VGS=10V, ID=2A (Note4,5) - Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR=2.0A,VGS=0V IDR=2.A,VGS=0V, dIDR / dt =100 A / µs Min - Type 180 0.72 Max 2.0 8.0 1.4 - Unit A A V ns µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=18.5mH IAS=2A,VDD=50V,RG=0Ω ,Starting TJ=25℃ 3.ISD≤2A,di/dt≤200A/us,VDD