WFD4N60B

WFD4N60B Silicon N-Channel MOSFET Features ■ 4A,600V.RDS(on)(Max 2.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high Rugged avalanche characteristics. This devices is specially well Suited for half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note 2) (Note 1) (Note 3) (Note1) Parameter Value 600 4 2.5 16 ±30 240 10 4.5 80 0.78 -55~150 300 Units V A A A V mJ mJ V/ns W W/℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQJA RQJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient Value Min - Typ - Max 1.56 50 Units ℃/W - - 110 ℃/W *When mounted on the minimum pad size recommended(PCB Mount) Rev.A Nov.2010 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. WFD4N60B Electrical Characteristics (Tc = 25°C) Characteristics Gate leakage current Gate−source breakdown voltage Symbol IGSS V(BR)GSS Test Condition VGS = ±30 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 600 V, VGS = 0 V Min ±30 600 2 - Type 1.7 545 7 70 10 35 45 20 16 3.4 7 Max ±100 10 100 4 2.4 670 10 90 30 80 Unit nA V μA μA V V Ω Drain cut−off current IDSS VDS = 480 V, Tc = 125°C Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate charge (gate−source V(BR)DSS VGS(th) RDS(ON) Ciss Crss Coss tr ton tf toff ID = 250 μA, VGS = 0 V VDS = 10 V, ID =250 μA VGS = 10 V, ID =2.0A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD =300 V, ID = 4.0A RG=25 Ω (Note4,5) VDD = 480 V, pF ns 100 50 20 nC (Note4,5) - Qg plus gate−drain) Gate−source charge Gate−drain (“miller”) Charge Qgs Qgd VGS = 10 V, ID =4.0A Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR =4.0 A, VGS = 0 V IDR = 4.0 A, VGS = 0 V, dIDR / dt = 100 A / μs Min - Type 390 2.2 Max 4 17.6 1.4 - Unit A A V ns μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=18.5mH,IAS=4.0A,VDD=50V,RG=0Ω,Starting TJ=25℃ 3.ISD≤4A,di/dt≤200A/us, VDD