WFD5N50

WFD5N50 Silicon N-Channel MOSFET Features ■ 5A,500V,RD S(on)(M ax 1.6Ω)@VGS=10V ■ Ultra-low Gate C harge(T ypica l 32nC) ■ Fas t Switching Capability ■ 100%Av ala nche Tested ■ Maximum Junction Temper ature Range(150℃ ) General Description T h i s P o w e r M O S F E T i s p r o d u c e d u s i n g W i n s e m i ’ s ad v a n c e d plan a r stri pe , DM OS tec hn o l og y . Thi s late s t tec hn o l og y ha s bee n es pe c ia lly de si gn e d to mi ni m iz e on- s ta t e resi s ta n c e , ha v e a h ig h rug g e d a v a l a n c h e ch ar a ct er i st i cs . Th i s de v i c e s is spe c i a l l y w e l l suited for high effic iency switch model power supplies, po wer factor cor re c ti o n an d ha lf bri dg e an d fu l l bri dg e reso nan t topo log y li ne a ele ctronic lamp ballast. DPAK Absolute Maximum Ratings Symbol V DSS ID Continuo us Drain C urrent(@Tc=100 ℃) IDM V GS E AS E AR d v /d t PD Dera ting Fac tor above 25℃ TJ, Tstg TL Junctio n and Storage Temperature 0.4 9 -55~15 0 30 0 W /℃ ℃ ℃ Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalan che Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power D i ss ip a t io n (@T c= 2 5 ℃ ) (N ote 2) (N ote 1) (Note 3) (N ote1) 2.9 18 ±3 0 30 0 7. 5 4. 5 61 A A V mJ mJ V/ n s W Drain Source Voltage Continuo us Drain C urrent(@Tc=25 ℃) P a ra m ete r Value 50 0 5 U n i ts V A Channel Temperature Thermal Characteristics V al ue Symb ol R QJC R QCS R QJA P a ra m et e r Min Thermal R esistance, Junction-to-Case Thermal R esistance, Case-to-Sink Thermal R esistance, Juncti on-to-Ambien t Typ 0. 5 M ax 2.05 62.5 ℃ /W ℃ /W ℃ /W U nits Rev.A Oct.2010 . Copyright@W insemi Microelectronics Co., Ltd., All right reserved. WFD5N50 Electrical Characteristics (Tc = 25℃) Characteristics Gate leakage current Gate−source breakdow n volta ge Drain cut−off current Drain− source breakdown voltage Break Voltag e Temper ature Coefficient Gate threshold voltage Drain− source ON resistance Forward T ransc onduc tance Input capacitance Reverse transfer capacitance Output capa citan ce Rise time Switching time Turn−on time Fall tim e Turn−off time Tota l gate charge (gate−source Qg plus gate− drain) Gate−source charge Gate−drain (“miller”) Charg e Qgs Qgd Sym bol IGSS V(BR)GSS IDSS V(BR)DSS ΔBVDSS/ Δ TJ VGS(th) RDS(ON) gfs C iss C rss C oss tr to n tf to f f Test Condition VGS = ±3 0 V, VDS = 0 V IG = ± 10 μA, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 250 μA, VGS = 0 V ID=250μA, 25℃ VDS = 10 V, ID =250 μA VGS = 10 V, ID = 2.25 A VDS = 40 V, ID = 2.25 A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD =250 V, ID =4.5A RG=25Ω (Note4 ,5) VDD = 400 V, VGS = 10 V, ID =5 A (Note4 ,5) Referenced to Min ±30 500 3 - Ty p e 0.55 1.16 4 .2 800 16 76 15 40 85 45 32 3. 7 15 Max ±10 0 1 4.5 1. 6 1050 21 100 40 90 180 100 44 Unit nA V μA V V/℃ V Ω S pF ns - nC - Source−Drain Ratings and Characteristics (Ta = 25℃) Cha racteristics Continuo us drain reverse c urrent Pulse drain reverse curr ent Forward voltage (dio de ) Reverse reco very tim e Reverse reco very charge Symbo l IDR IDRP VDSF trr Q rr Test Condi tion IDR =5A, VGS = 0 V IDR =5A, VGS = 0 V, dIDR / dt = 100 A / μ s Min - T yp e 305 2.6 Ma x 5 18 1.4 - Uni t A A V ns μC Note 1.Repeativity ra ting :pul se width limit ed by junction te m p era tu re 2.L=24m H,IAS= 5A,V DD=50V,RG=25Ω ,Starti ng TJ=25℃ 3.ISD ≤5A,di/dt≤ 300A/us, VDD