WFD830

WFD830 Silicon N-Channel MOSFET Features ■ 4.5A,500V,RDS(on)(Max 1.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi ’ s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD Derating Factor above 25℃ TJ, Tstg TL Junction and Storage Temperature 0.38 -55~150 300 W/℃ ℃ ℃ Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) (Note 2) (Note 1) (Note 3) (Note1) Parameter Value 500 4.5 2.9 18 ±30 300 7.5 4.5 48 Units V A A A V mJ mJ V/ns W Channel Temperature Thermal Characteristics Symbol RQJC RQJA RQJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient Value Min - Typ - Max 2.6 50 110 Units ℃/W ℃/W ℃/W *When mounted on the minimum pad size recommended(PCB Mount) Rev.A Nov.2010 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. WFD830 Electrical Characteristics (Tc = 25°C) Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Break Voltage Temperature Coefficient Gate threshold voltage Drain−source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate charge (gate−source Qg plus gate−drain) Gate−source charge Gate−drain (“miller”) Charge Qgs Qgd VGS = 10 V, nC ID =4.5 A (Note4,5) 3.7 15 tf toff VDD = 400 V, 32 44 RG=25Ω (Note4,5) 85 45 180 100 Symbol IGSS V(BR)GSS IDSS V(BR)DSS ΔBVDSS/ ΔTJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton Test Condition VGS = ±30 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 250 μA, VGS = 0 V ID=250μA, 25℃ VDS = 10 V, ID =250 μA VGS = 10 V, ID = 2.25A VDS = 40 V, ID = 2.25A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD =250 V, ID =4.5A Referenced to Min ±30 500 2 - Type 0.55 1.16 4.2 800 18 76 15 40 Max ±100 1 4 1.5 1050 23 100 40 90 Unit nA V μA V V/℃ V Ω S pF ns Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 4.5 A, VGS = 0 V IDR = 4.5 A, VGS = 0 V, dIDR / dt = 100 A / μs Min - Type 305 2.6 Max 4.5 18 1.4 - Unit A A V ns μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=24mH,IAS=4.5A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤4.5A,di/dt≤300A/us, VDD