WFD830B

WFD830B Silicon N-Channel MOSFET Features � � � � � 5A,500V, RDS(on)(Max1.6Ω)@VGS=10V Ultra-low Gate charge(Typical 18nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1) Parameter Value 500 5 2.9 20 ±30 300 7.3 4.5 61 0.49 -55~150 300 Units V A A A V mJ mJ V/ ns W W/℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient Value Min - Typ 0.5 - Max 2.05 62.5 Units ℃/W ℃/W ℃/W Rev.A Feb.2011 Copyright@W ins emi Microelectronics Co., Ltd., All right reserved. WFD830B Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Symbol IGSS V(BR)GSS Test Condition VGS=±30V,VDS=0V IG=±10 µA,VDS=0V VDS=500V,VGS=0V Min ±30 - Type - Max ±100 1 10 Unit nA V µA µA V V/℃ V Ω S Drain cut -off current IDSS VDS=400V,TC=125℃ Drain -source breakdown voltage Breakdown voltage Temperature Coefficient Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source V(BR)DSS △BVDSS/ △TJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton tf toff ID=250 µA,VGS=0V ID=250µA,Referenced 500 - 0.5 1.43 5.2 480 15 80 46 12 48 50 18 2.2 9.7 4.5 1.6 625 20 105 100 35 to 25℃ VDS=VGS,ID=250 µA VGS=10V,ID=2.5A VDS=40V,ID=2.5A VDS=25V, VGS=0V, f=1MHz VDD=250V, ID=5A RG=25Ω (Note4,5) VDD=400V, 3 VGS=10V, nC ID=5A (Note4,5) - pF ns 105 110 24 - Qg plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR=5A,VGS=0V IDR=5A,VGS=0V, dIDR / dt =100 A / µs Min - Type 263 1.9 Max 5 20 1.4 - Unit A A V ns µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=21.5mH IAS=5A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤5A,di/dt≤200A/us,VDD