WFF10N60

WFF10N60 Silicon N-Channel MOSFET Features � � � � � � 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Improved dv/dt capability General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supplies , power factor correction, UPS and a electronic lamp ballast base on half bridge. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1) Parameter Value 600 10* 6.0* 40* ±30 713 18 4.5 50 0.4 -55~150 300 Units V A A A V mJ mJ V/ ns W W/℃ ℃ ℃ *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RQJC RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Junction-to -Ambient Value Min - Typ - Max 2.5 62.5 Units ℃/W ℃/W Rev.A Sep.2010 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. WFF10N60 Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut -off current Drain -source breakdown voltage Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source Qg plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd VGS=10V, nC ID=10A (Note4,5) 6.9 12 tf toff VDD=480V, 34 45 Symbol IGSS V(BR)GSS IDSS V(BR)DSS VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton Test Condition VGS=±30V,VDS=0V IG=±10 µA,VDS=0V VDS=600V,VGS=0V ID=250 µA,VGS=0V VDS=10V,ID=250 µA VGS=10V,ID=4.75A VDS=50V,ID=4.75A VDS=25V, VGS=0V, f=1MHz VDD=300V, ID=10A， RG=25Ω， (Note4,5) Min ±30 600 3 - Type 0.66 8.2 1610 19 156 68 109 214 85 Max ±100 1 4.5 0.75 2065 25 210 91 150 Unit nA V µA V V Ω S pF ns 300 165 Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR=10A,VGS=0V IDR=10A,VGS=0V, dIDR / dt =100 A / µs Min - Type 1.05 442 2.16 Max 10 38 1.4 633 3.24 Unit A A V ns µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=14.5mH IAS=10A,VDD=50V,RG=0Ω ,Starting TJ=25℃ 3.ISD≤10A,di/dt≤300A/us,VDD