WFF5N60

WF WFF5N60 Silicon N-Channel MOSFET Features ■ 4.5A,600V,RDS(on)(Max 2.2 Ω)@ V GS=1 0V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using W insemi’s advanced Planar stripe, VDMOS technology. This lates t technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100℃) IDM V GS EAS E AR d v /d t PD Derating Factor above 25℃ TJ, Tstg TL Junction and Storage Temperature 0. 26 -55~150 30 0 W /℃ ℃ ℃ Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@T c=25℃) (Note 2) (Note 1) (Note 3) (Note1) 3. 1 * 16 * ± 30 24 0 10 4. 5 33 A A V mJ mJ V / ns W Drain Source Voltage Continuous Drain Current(@Tc=25℃) Parameter Value 60 0 4. 5* Units V A Channel Temperature *Drain current limited by junction tem perature Thermal Characteristics Symbol R QJC R QJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Value Min - Typ - Max 3.79 62.5 Units ℃ /W ℃ /W 1/7 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. WF WFF5N60 Electrical Characteristics (Tc = 25°C) Characteristics Gate leakage current Gate−source breakdown voltage Symbol IGSS V(BR)GSS Test Conditio n VGS = ±30 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 600 V, VDS = 0 V Min ± 30 600 2 - Ty p e 1.8 545 9 70 10 35 45 20 Max ± 10 0 10 100 4 2 .5 670 10.5 90 30 80 Unit nA V μA μA V V Ω Drain cut−off current IDSS VDS = 480 V, Tc = 12 5℃ Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate charge (gate−source V(BR)DSS VGS(th) RDS(ON) C iss C rss C oss tr ton tf to f f ID = 250 μA, VGS = 0 V VDS = 10 V, ID =250 μA VGS = 10 V, ID = 2.2A VDS = 25 V, V GS = 0 V , f = 1 MHz VDD =300 V, ID =4.4 A RG=25 Ω (Note4,5) VDD = 48 0 V, pF ns 100 50 - Qg plus gate−drain) Gate−source charge Gate−drain (“miller”) Charge Qgs Qgd V GS = 1 0 V , ID = 4.4 A (Note4,5) - 16 20 nC - 3.4 7 - Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF Trr Qrr Test Condition IDR = 4.4 A, VGS = 0 V IDR = 4.4 A, VGS = 0 V, dIDR / dt = 100 A / μ s Min - Ty p e 390 2.2 Max 4.5 17.6 1.4 - Unit A A V ns μC Note 1.Repeativity rating :pulse width limited by junction tem pera tur e 2.L=18.5mH,IAS=4.4A,VDD=50V,RG=0Ω,Starting TJ=25℃ 3.ISD≤4.5A,di/dt≤200A/us, VDD