WFF5N60B

WFF5N60B Silicon N-Channel MOSFET Features � � � � � 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well full bridge resonant topology line a mode power suited for half bridge and electronic lamp ballast, high efficiency switched supplies, active power factor correction. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1) Parameter Value 600 4.5* 3.1* 16* ±30 240 10 4.5 30 0.23 -55~150 300 Units V A A A V mJ mJ V/ns W W/℃ ℃ ℃ *Drain current limited by junction temperature Thermal Characteristics Symbol RQJC RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Junction-to -Ambient Value Min - Typ - Max 4.16 62.5 Units ℃/W ℃/W Rev.A Nov.2010 Copyright@W insemi Microelectronics Co., Ltd., All right reserved. WFF5N60B Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Symbol IGSS V(BR)GSS Test Condition VGS=±30V,VDS=0V IG=±10 µA,VDS=0V VDS=600V,VGS=0V Min ±30 - Type - Max ±100 10 100 Unit nA V µA µA V/℃ Drain Cut -off current IDSS VDS=480V,Tc=125℃ △BVDSS/ △TJ V(BR)DSS VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton tf toff VDD=480V, Qg VGS=10V, nC Qgs Qgd ID=4.4A (Note,5) 3.4 7.1 15 20 Breakdown voltage Temperature coefficient Drain -source breakdown voltage Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source plus gate-drain) Gate-source charge Gate-drain("miller") Charge ID=250 µA,Referenced to 25℃ ID=250 µA,VGS=0V VDS=VGS,ID=250 µA VGS=10V,ID=2.2A VDS=50V,ID=2.2A VDS=25V, VGS=0V, f=1MHz VDD=300V, ID=4.4A RG=25Ω (Note4,5) 600 2 2.0 4.0 520 8 70 45 13 35 25 4 2.4 670 11 90 100 35 ns 80 60 pF V V Ω S 0.6 - Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR=4.4A,VGS=0V IDR=4.4A,VGS=0V, dIDR /dt =100 A /µs Min 250 1.5 Type - Max 4.5 17.6 1.4 - Unit A A V ns µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=25mH IAS=4.4A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤4.5A,di/dt≤200A/us,VDD